Characterisation of a Thin Fully Depleted SOI Pixel Sensor with High Momentum Charged Particles

This paper presents the results of the characterisation of a thin, fully depleted pixel sensor manufactured in SOI technology on high-resistivity substrate with high momentum charged particles. The sensor is thinned to 70 $\mu$m and a thin phosphor layer contact is implanted on the back-plane. Its response is compared to that of thick sensors of same design in terms of signal and noise, detection efficiency and single point resolution based on data collected with 300 GeV pions at the CERN SPS. We observe that the charge collected and the signal-to-noise ratio scale according to the estimated thickness of the sensitive volume and the efficiency and single point resolution of the thinned chip are comparable to those measured for the thick sensors.Comment: 8 pages, 3 figures, submitted to Nucl. Instr. and Meth., section

Cluster Imaging with a Direct Detection CMOS Pixel Sensor in Transmission Electron Microscopy

A cluster imaging technique for Transmission Electron Microscopy with a direct detection CMOS pixel sensor is presented. Charge centre-of-gravity reconstruction for individual electron clusters improves the spatial resolution and thus the point spread function. Data collected with a CMOS sensor with 9.5 micron pixels show an improvement of a factor of two in point spread function to 2.7 micron at 300 keV and of a factor of three in the image contrast, compared to traditional bright field illumination.Comment: 6 pages, 3 figures, submitted to Nucl. Instr. Meth.

Monolithic Pixel Sensors in Deep-Submicron SOI Technology with Analog and Digital Pixels

This paper presents the design and test results of a prototype monolithic pixel sensor manufactured in deep-submicron fully-depleted Silicon-On-Insulator (SOI) CMOS technology. In the SOI technology, a thin layer of integrated electronics is insulated from a (high-resistivity) silicon substrate by a buried oxide. Vias etched through the oxide allow to contact the substrate from the electronics layer, so that pixel implants can be created and a reverse bias can be applied. The prototype chip, manufactured in OKI 0.15 micron SOI process, features both analog and digital pixels on a 10 micron pitch. Results of tests performed with infrared laser and 1.35 GeV electrons and a first assessment of the effect of ionising and non-ionising doses are discussed.Comment: 5 pages, 7 figures, submitted to Nuclear Instruments and Methods

Tracking and Vertexing with a Thin CMOS Pixel Beam Telescope

We present results of a study of charged particle track and vertex reconstruction with a beam telescope made of four layers of 50 micron-thin CMOS monolithic pixel sensors using the 120 GeV protons at the FNAL Meson Test Beam Facility. We compare our results to the performance requirements of a future e+e- linear collider in terms of particle track extrapolation and vertex reconstruction accuracies.Comment: 9 pages, 7 figures submitted to Nuclear Instruments and Methods

Development of CMOS monolithic pixel sensors with in-pixel correlated double sampling and fast readout for the ILC

This paper presents the design and results of detailed tests of a CMOS active pixel chip for charged particle detection with in-pixel charge storage for correlated double sampling and readout in rolling shutter mode at frequencies up to 25 MHz. This detector is developed in the framework of R&D for the Vertex Tracker for the International Linear Collider.Comment: 3 pages, 4 figures, to appear on the Conference Record of the 2007 IEEE Nuclear Science Symposium, Honolulu, HI, October 200

A Study of Monolithic CMOS Pixel Sensors Back-thinning and their Application for a Pixel Beam Telescope

This paper reports results on a detailed study of charge collection and signal-to-noise performance of CMOS monolithic pixel sensors before and after back-thinning and their application in a pixel beam telescope for the ALS 1.5 GeV $e^-$ beam test facility.Comment: 6 pages, one figure, to appear on the proceedings of the the Sixth International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors, Carmel, CA, September, 200