Influence of heavy modes on perturbations in multiple field inflation

We investigate linear cosmological perturbations in multiple field inflationary models where some of the directions are light while others are heavy (with respect to the Hubble parameter). By integrating out the massive degrees of freedom, we determine the multi-dimensional effective theory for the light degrees of freedom and give explicitly the propagation matrix that replaces the effective sound speed of the one-dimensional case. We then examine in detail the consequences of a sudden turn along the inflationary trajectory, in particular the possible breakdown of the low energy effective theory in case the heavy modes are excited. Resorting to a new basis in field space, instead of the usual adiabatic/entropic basis, we study the evolution of the perturbations during the turn. In particular, we compute the power spectrum and compare with the result obtained from the low energy effective theory.Comment: 24 pages, 13 figures; v2 substantial changes in sec.V; v3 matching the published version on JCA

Electrical conduction of silicon oxide containing silicon quantum dots

Current-voltage measurements have been made at room temperature on a Si-rich silicon oxide film deposited via Electron-Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition (ECR-PECVD) and annealed at 750 - 1000$^\circ$C. The thickness of oxide between Si quantum dots embedded in the film increases with the increase of annealing temperature. This leads to the decrease of current density as the annealing temperature is increased. Assuming the Fowler-Nordheim tunneling mechanism in large electric fields, we obtain an effective barrier height $\phi_{eff}$ of $\sim$ 0.7 $\pm$ 0.1 eV for an electron tunnelling through an oxide layer between Si quantum dots. The Frenkel-Poole effect can also be used to adequately explain the electrical conduction of the film under the influence of large electric fields. We suggest that at room temperature Si quantum dots can be regarded as traps that capture and emit electrons by means of tunneling.Comment: 14 pages, 5 figures, submitted to J. Phys. Conden. Mat

Electric-field-induced phase transition of <001> oriented Pb(Mg1/3Nb2/3)O3-PbTiO3 single crystals

oriented 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 single crystals were poled under different electric fields, i.e. Epoling=4 kV/cm and Epoling=13 kV/cm. In addition to the temperature-dependent dielectric constant measurement, X-ray diffraction was also used to identify the poling-induced phase transitions. Results showed that the phase transition significantly depends on the poling intensity. A weaker field (Epoling=4 kV/cm) can overcome the effect of random internal field to perform the phase transition from rhombohedral ferroelectric state with short range ordering (microdomain) FESRO to rhombohedral ferroelectric state with long range ordering (macrodomain) FElRO. But the rhombohedral ferroelectric to tetragonal ferroelectric phase transition originating from to polarization rotation can only be induced by a stronger field (Epoling=13 kV/cm). The sample poled at Epoling=4 kV/cm showed higher piezoelectric constant, d33>1500 pC/N, than the sample poled at Epoling=13 kV/cm.Comment: 7 pages, 2 figure

Anomalous thermoelectric effects of ZrTe5_{5} in and beyond the quantum limit

Thermoelectric effects are more sensitive and promising probes to topological properties of emergent materials, but much less addressed compared to other physical properties. Zirconium pentatelluride (ZrTe$_{5}$) has inspired active investigations recently because of its multiple topological nature. We study the thermoelectric effects of ZrTe$_{5}$ in a magnetic field and find several anomalous behaviors. The Nernst response has a steplike profile near zero field when the charge carriers are electrons only, suggesting the anomalous Nernst effect arising from a nontrivial profile of Berry curvature. Both the thermopower and Nernst signal exhibit exotic peaks in the strong-field quantum limit. At higher magnetic fields, the Nernst signal has a sign reversal at a critical field where the thermopower approaches to zero. We propose that these anomalous behaviors can be attributed to the Landau index inversion, which is resulted from the competition of the $\sqrt{B}$ dependence of the Dirac-type Landau bands and linear-$B$ dependence of the Zeeman energy ($B$ is the magnetic field). Our understanding to the anomalous thermoelectric properties in ZrTe$_{5}$ opens a new avenue for exploring Dirac physics in topological materials.Comment: 6 pages, 4 figure

A Statistical Approach to Multifield Inflation: Many-field Perturbations Beyond Slow Roll

We study multifield contributions to the scalar power spectrum in an ensemble of six-field inflationary models obtained in string theory. We identify examples in which inflation occurs by chance, near an approximate inflection point, and we compute the primordial perturbations numerically, both exactly and using an array of truncated models. The scalar mass spectrum and the number of fluctuating fields are accurately described by a simple random matrix model. During the approach to the inflection point, bending trajectories and violations of slow roll are commonplace, and 'many-field' effects, in which three or more fields influence the perturbations, are often important. However, in a large fraction of models consistent with constraints on the tilt the signatures of multifield evolution occur on unobservably large scales. Our scenario is a concrete microphysical realization of quasi-single-field inflation, with scalar masses of order $H$, but the cubic and quartic couplings are typically too small to produce detectable non-Gaussianity. We argue that our results are characteristic of a broader class of models arising from multifield potentials that are natural in the Wilsonian sense.Comment: 39 pages, 17 figures. References added. Matches version published in JCA

Linear magnetoresistance in commercial n-type silicon due to inhomogeneous doping

Free electron theory tells us that resistivity is independent of magnetic field. In fact, most observations match the semiclassical prediction of a magnetoresistance that is quadratic at low fields before saturating. However, a non-saturating linear magnetoresistance has been observed in exotic semiconductors such as silver chalcogenides, lightly-doped InSb, N-doped InAs, MnAs-GaAs composites, PrFeAsO, and epitaxial graphene. Here we report the observation of a large linear magnetoresistance in the ohmic regime in commonplace commercial n-type silicon wafer. It is well-described by a classical model of spatially fluctuating donor densities, and may be amplified by altering the aspect ratio of the sample to enhance current-jetting: increasing the width tenfold increased the magnetoresistance at 8 T from 445 % to 4707 % at 35 K. This physical picture may well offer insights into the large magnetoresistances recently observed in n-type and p-type Si in the non-ohmic regime.Comment: submitted to Nature Material