Magnetooptical determination of a topological index

When a Dirac fermion system acquires an energy-gap, it is said to have either trivial (positive energy-gap) or non-trivial (negative energy-gap) topology, depending on the parity ordering of its conduction and valence bands. The non-trivial regime is identified by the presence of topological surface or edge-state dispersing in the energy gap of the bulk and is attributed a non-zero topological index. In this work, we show that such topological indices can be determined experimentally via an accurate measurement of the effective velocity of bulk massive Dirac fermions. We demonstrate this analytically starting from the Bernevig-Hughes-Zhang Hamiltonian (BHZ) to show how the topological index depends on this velocity. We then experimentally extract the topological index in Pb1-xSnxSe and Pb1-xSnxTe using infrared magnetooptical Landau level spectroscopy. This approach is argued to be universal to all material classes that can be described by a BHZ-like model and that host a topological phase transition.Comment: Accepted for publication in Nature Partner Journal Quantum Material

Disorder-perturbed Landau levels in high electron mobility epitaxial graphene

We show that the Landau levels in epitaxial graphene in presence of localized defects are significantly modified compared to those of an ideal system. We report on magneto-spectroscopy experiments performed on high quality samples. Besides typical interband magneto-optical transitions, we clearly observe additional transitions that involve perturbed states associated to short-range impurities such as vacancies. Their intensity is found to decrease with an annealing process and a partial self-healing over time is observed. Calculations of the perturbed Landau levels by using a delta-like potential show electronic states both between and at the same energies of the Laudau levels of ideal graphene. The calculated absorption spectra involving all perturbed and unperturbed states are in very good agreement with the experiments

High Electron Mobility in Epitaxial Trilayer Graphene on Off-axis SiC(0001)

International audienceThe van de Waals heterostructure formed by an epitaxial trilayer graphene is of particular interest due to its unique tunable electronic band structure and stacking sequence. However, to date, there has been a lack in the fundamental understanding of the electronic properties of epitaxial trilayer graphene. Here, we investigate the electronic properties of large-area epitaxial trilayer graphene on a 4° off-axis SiC(0001) substrate. Micro-Raman mappings and atomic force microscopy (AFM) confirmed predominantly trilayer on the sample obtained under optimized conditions. We used angle-resolved photoemission spectroscopy (ARPES) and Density Functional Theory (DFT) calculations to study in detail the structure of valence electronic states, in particular the dispersion of π bands in reciprocal space and the exact determination of the number of graphene layers. Using far-infrared magneto-transmission (FIR-MT), we demonstrate, that the electron cyclotron resonance (CR) occurs between Landau levels with a (B)1/2 dependence. The CR line-width is consistent with a high Dirac fermions mobility of ~3000 cm2·V−1·s−1 at 4 K

Dirac Landau Level Spectroscopy in Pb1−xSnxSe and Pb1−xSnxTe across the Topological Phase Transition: A Review

Topological crystalline insulators (TCIs) are topological materials that have Dirac surface states occurring at crystalline symmetric points in the Brillouin zone. This topological state has been experimentally shown to occur in the lead–tin salts Pb1−xSnxSe and Pb1−xSnxTe. More recent works also took interest in studying the topological phase transition from trivial to non-trivial topology that occurs in such materials as a function of increasing Sn content. A peculiar property of these materials is the fact that their bulk bands disperse following a massive Dirac dispersion that is linear at low energies above the energy gap. This makes Pb1−xSnxSe and Pb1−xSnxTe ideal platforms to simultaneously study 3D and 2D Dirac physics. In this review, we will go over infrared magneto-optical studies of the Landau level dispersion of Pb1−xSnxSe and Pb1−xSnxTe for both the bulk and surface bands and summarize work that has been done on this matter. We will review recent work on probing the topological phase transition in TCI. We will finally present our views on prospects and open questions that have yet to be addressed in magneto-optical spectroscopy studies on Pb1-xSnxSe and Pb1−xSnxTe

Magnéto-spectroscopie de la matière de Dirac : graphène et isolants topologiques

This thesis reports on the study under magnetic field of the electronic properties of relativistic-like Dirac fermions in two Dirac systems: graphene and topological insulators. Their analogies with high-energy physics and their potential applications have attracted great attention for fundamental research in condensed matter physics. The carriers in these two materials obey a Dirac Hamiltonian and the energy dispersion is analogous to that of the relativistic particles. The particle rest mass is related to the band gap of the Dirac material, with the Fermi velocity replacing the speed of light. Graphene has been considered as a “role model”, among quantum solids, that allows us to study the relativistic behavior of massless Dirac fermions satisfying a linear dispersion. When a Dirac system possesses a nonzero gap, we have massive Dirac fermions. Massless and massive Dirac fermions were studied in high-mobility multilayer epitaxial graphene and in topological crystalline insulators Pb1-xSnxSe and Pb1-xSnxTe. The latter system is a new class of topological materials where the bulk states are insulating but the surface states are conducting. This particular aspect results from the inversion of the lowest conduction and highest valence bulk bands having different parities, leading to a topological phase transition. Infrared magneto-spectroscopy is an ideal technique to probe these zero-gap or narrow gap materials since it provides quantitative information about the bulk parameters via the Landau quantization of the electron states. In particular, the topological phase transition can be characterized by a direct measurement of the topological index.Ce travail consiste en l'étude sous champ magnétique des propriétés électroniques des fermions de Dirac relativistes dans deux systèmes: graphène et isolants topologiques. Leur analogie avec la physique des hautes énergies et leurs applications potentielles ont suscité récemment de nombreux travaux. Les états électroniques sont donnés par un Hamiltonien de Dirac et la dispersion est analogue à celle des particules relativistes. La masse au repos est liée au gap du matériau avec une vitesse de Fermi remplaçant la vitesse de la lumière. Le graphène a été considéré comme un " système école " qui nous permet d'étudier le comportement relativiste des fermions de Dirac sans masse satisfaisant une dispersion linéaire. Quand un système de Dirac possède un gap non nul, nous avons des fermions de Dirac massifs. Les fermions de Dirac sans masse et massifs ont été étudiés dans le graphène épitaxié et les isolants topologiques cristallins Pb1-xSnxSe et Pb1-xSnxTe. Ces derniers systèmes sont une nouvelle classe de matériaux topologiques où les états de bulk sont isolants mais les états de surface sont conducteurs. Cet aspect particulier résulte de l'inversion des bandes de conduction et de valence du bulk ayant des parités différentes, conduisant à une transition de phase topologique. La magnéto-spectroscopie infrarouge est une technique idéale pour sonder ces matériaux de petit gap car elle fournit des informations quantitatives sur les paramètres du bulk via la quantification de Landau des états électroniques. En particulier, la transition de phase topologique est caractérisée par une mesure directe de l'indice topologique

Dirac Landau Level Spectroscopy in Pb(1−x)Sn(x)Se and Pb(1−x)Sn(x)Te across the Topological Phase Transition: A Review

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