DOSAGE IMMUNOMETRIQUE DU 17-ESTRADIOL (NOUVEAUX DEVELOPPEMENTS DU PROCEDE SPIE-IA ET APPLICATION A L'AUTOMATE VIDAS )

PARIS-BIUSJ-Physique recherche (751052113) / SudocCentre Technique Livre Ens. Sup. (774682301) / SudocSudocFranceF

An enzyme immunoassay for salmon gonadotropin-releasing hormone and its application to the study of the effects of diet on brain and pituitary GnRH in the sea bass, Dicentrarchus labrax

The effects of two different diets [diet 1 (D1), high protein-low carbohydrate: diet 2 (D2), low protein-high carbohydrate] on brain and pituitary gonadotropin-releasing hormone (GnRH) contents, as well as circulating steroids and vitellogenin, were studied over the reproductive period of the sea bass. Salmon GnRH was measured using a newly developed competitive enzyme immunoassay with an enzymatic tracer made of sGnRH covalently coupled to actetylcholinesterase from the electric organ of the eel Electrophorus electricus. The pituitary GnRH content of animals of both sexes fed D1 was significantly reduced at the time of spawning compared with the pre- and postspawning stages, whereas fish fed D2 did not exhibit such changes. In the brain only minor differences in the GnRH content were observed between the two diets. It is concluded that GnRH release rather than synthesis is affected in fish fed a low protein-high carbohydrate regimen. Plasma sex steroids and vitellogenin were not greatly affected by the diet

Progress and process improvements for multiple electron-beam direct write

International audienceMassively parallel electron beam direct write (MP-EBDW) lithography is a cost-effective patterning solution, complementary to optical lithography, for a variety of applications ranging from 200 to 14 nm. This paper will present last process/integration results to achieve targets for both 28 and 45nm nodes. For 28nm node, we mainly focus on line-width roughness (LWR) mitigation by playing with stack, new resist platform and bias design strategy. The lines roughness was reduced by using thicker spin-on-carbon (SOC) hardmask (-14%) or non-chemically amplified (non-CAR) resist with bias writing strategy implementation (-20%). Etch transfer into trilayer has been demonstrated by preserving pattern fidelity and profiles for both CAR and non-CAR resists. For 45nm node, we demonstrate the electron-beam process integration within optical CMOS flows. Resists based on KrF platform show a full compatibility with multiple stacks to fit with conventional optical flow used for critical layers. Electron-beam resist performances have been optimized to fit the specifications in terms of resolution, energy latitude, LWR and stack compatibility. The patterning process overview showing the latest achievements is mature enough to enable starting the multi-beam technology pre-production mode