An Interactive App for Color Deficient Viewers

Color deficient individuals have trouble seeing color contrasts that could be very apparent to individuals with normal color vision. For example, for some color deficient individuals, red and green apples do not have the striking contrast they have for those with normal color vision, or the abundance of red cherries in a tree is not immediately clear due to a lack of perceived contrast. We present a smartphone app that enables color deficient users to visualize such problematic color contrasts in order to help them with daily tasks. The user interacts with the app through the touchscreen. As the user traces a path around the touchscreen, the colors in the image change continuously via a transform that enhances contrasts that are weak or imperceptible for the user under native viewing conditions. Specifically, we propose a transform that shears the data along lines parallel to the dimension corresponding to the affected cone sensitivity of the user. The amount and direction of shear are controlled by the user'sfinger movement over the touchscreen allowing them to visualize these contrasts. Using the GPU, this simple transformation, consisting of a linear shear and translation, is performed efficiently on each pixel and in real-time with the changing position of the user's finger. The user can use the app to aid daily tasks such as distinguishing between red and green apples or picking out ripe bananas

Microelectronics Reliability Volume 55, Issues 9–10

International audienc

Editorial, Microelectronics Reliability, Volume 55, Issues 9–10, August–September 2015

International audienc

Different failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure

International audienc

Different failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure

International audienc

ESD Induced Latent Defects In CMOS ICs And Reliability Impact

International audienceA dedicated test vehicle was designed to study the impact of ESD induced latent defects on digital and analog CMOS circuits. Both CDM and TLP stresses were applied to these circuits through a specific pad which allows stressing the circuit core. Both electrical characterization and non-destructive failure analysis were performed to locate the induced defect. For digital circuits, functionality is not affected although the IDDQ quiescent current increased. However, after burn-in and storage, it was observed that the IDDQ current significantly increased suggesting that the circuit lifetime is degraded. In contrast, even at very low stress level, the analog circuit exhibits a dramatic offset degradation and no recovery is observed after burn-in

Analysis and Compact Modeling of a Vertical Grounded-Base NPN Bipolar Transistor used as ESD Protection in a Smart Power Technology

9 pagesInternational audienceA thorough analysis of the physical mechanisms involved in a Vertical Grounded-Base NPN bipolar transistor (VGBNPN) under ElectroStatic Discharge (ESD) stress is first carried out by using 2D-device simulation, Transmission Line Pulse measurement (TLP) and photoemission experiments. This analysis is used to account for the unexpected low value of the VGBNPN snapback holding voltage under TLP stress. A compact model based on a new avalanche formulation resulting from the exact resolution of the ionization integral is therefore proposed

Analysis and Compact Modeling of a Vertical Grounded-Base NPN Bipolar Transistor used as ESD Protection in a Smart Power Technology

9 pagesInternational audienceA thorough analysis of the physical mechanisms involved in a Vertical Grounded-Base NPN bipolar transistor (VGBNPN) under ElectroStatic Discharge (ESD) stress is first carried out by using 2D-device simulation, Transmission Line Pulse measurement (TLP) and photoemission experiments. This analysis is used to account for the unexpected low value of the VGBNPN snapback holding voltage under TLP stress. A compact model based on a new avalanche formulation resulting from the exact resolution of the ionization integral is therefore proposed

Optimizing pulsed OBIC technique for ESD defect localization

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Etude du métabolisme in vitro du bisphénol F

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