Assessing electron beam sensitivity for SrTiO3 and La0.7Sr0.3MnO3 using electron energy loss spectroscopy

Thresholds for beam damage have been assessed for La0.7Sr0.3MnO3 and SrTiO3 as a function of electron probe current and exposure time at 80 and 200 kV acceleration voltage. The materials were exposed to an intense electron probe by aberration corrected scanning transmission electron microscopy (STEM) with simultaneous acquisition of electron energy loss spectroscopy (EELS) data. Electron beam damage was identified by changes of the core loss fine structure after quantification by a refined and improved model based approach. At 200 kV acceleration voltage, damage in SrTiO3 was identified by changes both in the EEL fine structure and by contrast changes in the STEM images. However, the changes in the STEM image contrast as introduced by minor damage can be difficult to detect under several common experimental conditions. No damage was observed in SrTiO3 at 80 kV acceleration voltage, independent of probe current and exposure time. In La0.7Sr0.3MnO3, beam damage was observed at both 80 and 200 kV acceleration voltages. This damage was observed by large changes in the EEL fine structure, but not by any detectable changes in the STEM images. The typical method to validate if damage has been introduced during acquisitions is to compare STEM images prior to and after spectroscopy. Quantifications in this work show that this method possibly can result in misinterpretation of beam damage as changes of material properties

Inhibition of metal dusting corrosion on Fe-based alloy by combined near surface severe plastic deformation (NS-SPD) and thermochemical treatment

Combined NS-SPD and thermochemical treatment has been used to improve the metal dusting corrosion resistance of Incoloy 800. After testing under infinite carbon activity for 20−100 h, carbon was not found in the NS-SPD region while corrosion products formed in the non-NS-SPD region. The improved resistance is a result of the NS-SPD yielding a high density of defects in the deformation zone that developed into an ultra-fine-grained structure near the surface during the subsequent thermochemical treatment. These microstructural changes increase the effective diffusion coefficient for Cr in the alloy, hence promoting the formation of a highly protective oxide scale.publishedVersio

Strategy for reliable strain measurement in InAs/GaAs materials from high-resolution Z-contrast STEM images

Geometric phase analysis (GPA), a fast and simple Fourier space method for strain analysis, can give useful information on accumulated strain and defect propagation in multiple layers of semiconductors, including quantum dot materials. In this work, GPA has been applied to high resolution Z-contrast scanning transmission electron microscopy (STEM) images. Strain maps determined from different g vectors of these images are compared to each other, in order to analyze and assess the GPA technique in terms of accuracy. The SmartAlign tool has been used to improve the STEM image quality getting more reliable results. Strain maps from template matching as a real space approach are compared with strain maps from GPA, and it is discussed that a real space analysis is a better approach than GPA for aberration corrected STEM images

Bandgap measurement of high refractive index materials by off-axis EELS

In the present work, Cs aberration corrected and monochromated scanning transmission electron microscopy electron energy loss spectroscopy STEM-EELS has been used to explore experimental set-ups that allows bandgaps of high refractive index materials to be determined. Semi-convergence and -collection angles in the micro-radian range were combined with off-axis or dark field EELS to avoid relativistic losses and guided light modes in the low loss range to contribute to the acquired EEL spectra. Off-axis EELS further suppressed the zero loss peak and the tail of the zero loss peak. The bandgap of several GaAs-based materials were successfully determined by direct inspection and without any background subtraction of the EEL spectra. The presented set-up does not require that the acceleration voltage is set to below the Cerenkov limit and can be applied over the entire acceleration voltage range of modern TEMs and for a wide range of specimen thicknesses.Comment: 16 pages, 8 figure

GaAs/AlGaAs Nanowire Array Solar Cell Grown on Si with Ultrahigh Power-per-Weight Ratio

Here we demonstrate a more effective use of III–V photoconversion material to achieve an ultrahigh power-per-weight ratio from a solar cell utilizing an axial p-i-n junction GaAs/AlGaAs nanowire (NW) array grown by molecular beam epitaxy on a Si substrate. By analyzing single NW multicontact devices, we first show that an n-GaAs shell is self-formed radially outside the axial p- and i-core of the GaAs NW during n-core growth, which significantly deteriorates the rectification property of the NWs in the axial direction. When employing a selective-area ex situ etching process for the n-GaAs shell, a clear rectification of the axial NW p-i-n junction with a high on/off ratio was revealed. Such a controlled etching process of the self-formed n-GaAs shell was further introduced to fabricate axial p-i-n junction GaAs NW array solar cells. Employing this method, a GaAs NW array solar cell with only ∼1.3% areal coverage of the NWs shows a photoconversion efficiency of ∼7.7% under 1 Sun intensity (AM 1.5G), which is the highest achieved efficiency from any single junction GaAs NW solar cell grown on a Si substrate so far. This corresponds to a power-per-weight ratio of the active III–V photoconversion material as high as 560 W/g, showing great promise for high-efficiency and low-cost III–V NW solar cells and III–V NW/Si tandem solar cells.publishedVersio

The influence of AlN buffer layer on the growth of self-assembled GaN nanocolumns on graphene

GaN nanocolumns were synthesized on single-layer graphene via radio-frequency plasma-assisted molecular beam epitaxy, using a thin migration-enhanced epitaxy (MEE) AlN buffer layer as nucleation sites. Due to the weak nucleation on graphene, instead of an AlN thin-film we observe two distinguished AlN formations which affect the subsequent GaN nanocolumn growth: (i) AlN islands and (ii) AlN nanostructures grown along line defects (grain boundaries or wrinkles) of graphene. Structure (i) leads to the formation of vertical GaN nanocolumns regardless of the number of AlN MEE cycles, whereas (ii) can result in random orientation of the nanocolumns depending on the AlN morphology. Additionally, there is a limited amount of direct GaN nucleation on graphene, which induces non-vertical GaN nanocolumn growth. The GaN nanocolumn samples were characterized by means of scanning electron microscopy, transmission electron microscopy, high-resolution X-ray diffraction, room temperature micro-photoluminescence, and micro-Raman measurements. Surprisingly, the graphene with AlN buffer layer formed using less MEE cycles, thus resulting in lower AlN coverage, has a lower level of nitrogen plasma damage. The AlN buffer layer with lowest AlN coverage also provides the best result with respect to high-quality and vertically-aligned GaN nanocolumns

High-Performance and Ultralow-Noise Two-Dimensional Heterostructure Field-Effect Transistors with One-Dimensional Electrical Contacts

Two-dimensional heterostructure field-effect transistors (2D-HFETs) with one-dimensional electrical contacts to atomically thin channels have recently shown great device performance, such as reduced contact resistance, leading to ballistic transport and enhanced carrier mobility. While a number of low-frequency noise studies exists on bare graphene devices supported on silicon dioxide gate insulators with surface contacts, such studies in heterostructure devices comprising epitaxial graphene on hexagonal boron nitride (hBN) with edge contacts are extremely limited. In this article, we present a systematic, temperature-dependent study of electrical transport and low-frequency noise in edge-contacted high-mobility HFET with a single atomic-layer graphene channel encapsulated by hBN and demonstrate ultralow noise with a Hooge parameter of ≈10–5. By combining measurements and modeling based on underlying microscopic scattering mechanisms caused by charge carriers and phonons, we directly correlate the high-performance, temperature-dependent transport behavior of this device with the noise characteristics. Our study provides a pathway towards engineering low-noise graphene-based high-performance 2D-FETs with one-dimensional edge contacts for applications such as digital electronics and chemical/biological sensing.acceptedVersio

Observation of Electric-Field-Induced Structural Dislocations in a Ferroelectric Oxide

Dislocations are 1D topological defects with emergent electronic properties. Their low dimensionality and unique properties make them excellent candidates for innovative device concepts, ranging from dislocation-based neuromorphic memory to light emission from diodes. To date, dislocations are created in materials during synthesis via strain fields or flash sintering or retrospectively via deformation, for example, (nano)-indentation, limiting the technological possibilities. In this work, we demonstrate the creation of dislocations in the ferroelectric semiconductor Er(Mn,Ti)O3 with nanoscale spatial precision using electric fields. By combining high-resolution imaging techniques and density functional theory calculations, direct images of the dislocations are collected, and their impact on the local electric transport behavior is studied. Our approach enables local property control via dislocations without the need for external macroscopic strain fields, expanding the application opportunities into the realm of electric-field-driven phenomena.publishedVersio