Field-effect-assisted photoconductivity in PbS films deposited on silicon dioxide

Cataloged from PDF version of article.Lead sulfide (PbS) thin films were deposited from a chemical bath onto SiO2/Si (n-type) substrates. Pseudo-metal-oxide-semiconductor devices were obtained by evaporating source and drain gold electrodes on a PbS surface and aluminum gate electrode on a Si substrate. Field-effect-assisted photoconductivity in the PbS layer was investigated at room temperature, in the 800-2700-nm-wavelength domain for different values and polarities of the drain and gate voltages. The best results were obtained for a positive gate, when both semiconductors are in depletion. An enhancement of about 25% of the photoconductive signal is obtained compared with the case when the gate electrode is absent or is not used. A simple model is proposed that explains the behavior of the dark current and photoconductive signal in PbS film with changing the gate voltage. (C) 2002 American Institute of Physics

Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization

Remarkable current-enhanced photoconductivity in oxygen-deficient La7/8Sr1/8MnO3−δ thin film Appl. Phys. Lett. 101, 042413 (2012) Ideal transparent conductors for full spectrum photovoltaics J. Appl. Phys. 111, 123505 (2012) Insights on the influence of surface roughness on photovoltaic properties of state of the art copper indium gallium diselenide thin films solar cells J. Appl. Phys. 111, 114509 (2012) Additional information on J. Appl. Phys

First πK\pi K atom lifetime and πK\pi K scattering length measurements

The results of a search for hydrogen-like atoms consisting of $\pi^{\mp}K^{\pm}$ mesons are presented. Evidence for $\pi K$ atom production by 24 GeV/c protons from CERN PS interacting with a nickel target has been seen in terms of characteristic $\pi K$ pairs from their breakup in the same target ($178 \pm 49$) and from Coulomb final state interaction ($653 \pm 42$). Using these results the analysis yields a first value for the $\pi K$ atom lifetime of $\tau=(2.5_{-1.8}^{+3.0})$ fs and a first model-independent measurement of the S-wave isospin-odd $\pi K$ scattering length $\left|a_0^-\right|=\frac{1}{3}\left|a_{1/2}-a_{3/2}\right|= \left(0.11_{-0.04}^{+0.09} \right)M_{\pi}^{-1}$ ($a_I$ for isospin $I$).Comment: 14 pages, 8 figure

DIRAC Experiment and Test of Low-Energy QCD

The low-energy QCD predictions to be tested by the DIRAC experiment are revised. The experimental method, the setup characteristics and capabilities, along with first experimental results are reported. Preliminary analysis shows good detector performance: alignment error via $\Lambda$ mass measurement $m_\Lambda = 1115.6 MeV/c^2$ with $\sigma = 0.92 MeV/c^2$, $p \pi^-$ relative momentum resolution $\sigma_Q \approx 2.7 MeV/c$, and evidence for $\pi^

Investigation of K+K−K^+K^- pairs in the effective mass region near 2mK2m_K

The DIRAC experiment at CERN investigated in the reaction $\rm{p}(24~\rm{GeV}/c) + Ni$ the particle pairs $K^+K^-, \pi^+ \pi^-$ and $p \bar{p}$ with relative momentum $Q$ in the pair system less than 100 MeV/c. Because of background influence studies, DIRAC explored three subsamples of $K^+K^-$ pairs, obtained by subtracting -- using time-of-flight (TOF) technique -- background from initial $Q$ distributions with $K^+K^-$ sample fractions more than 70\%, 50\% and 30\%. The corresponding pair distributions in $Q$ and in its longitudinal projection $Q_L$ were analyzed first in a Coulomb model, which takes into account only Coulomb final state interaction (FSI) and assuming point-like pair production. This Coulomb model analysis leads to a $K^+K^-$ yield increase of about four at $Q_L=0.5$ MeV/c compared to 100 MeV/c. In order to study contributions from strong interaction, a second more sophisticated model was applied, considering besides Coulomb FSI also strong FSI via the resonances $f_0(980)$ and $a_0(980)$ and a variable distance $r^*$ between the produced $K$ mesons. This analysis was based on three different parameter sets for the pair production. For the 70\% subsample and with best parameters, $3680\pm 370$ $K^+K^-$ pairs was found to be compared to $3900\pm 410$ $K^+K^-$ extracted by means of the Coulomb model. Knowing the efficiency of the TOF cut for background suppression, the total number of detected $K^+K^-$ pairs was evaluated to be around $40000\pm 10\%$, which agrees with the result from the 30\% subsample. The $K^+K^-$ pair number in the 50\% subsample differs from the two other values by about three standard deviations, confirming -- as discussed in the paper -- that experimental data in this subsample is less reliable

Detection of π+π−\pi^+\pi^-atoms with the DIRAC spectrometer at CERN

The goal of the DIRAC experiment at CERN is to measure with high precision the lifetime of the $\pi^+\pi^-$ atom ($A_{2\pi}$), which is of order $3\times10^{-15}$ s, and thus to determine the s-wave $\pi\pi$-scattering lengths difference $|a_{0}-a_{2}|$. $A_{2\pi}$ atoms are detected through the characteristic features of $\pi^+\pi^-$ pairs from the atom break-up (ionization) in the target. We report on a first high statistics atomic data sample obtained from p Ni interactions at 24 GeV/$c$ proton momentum and present the methods to separate the signal from the background.Comment: 19 pages, 12 figures, 1 tabl

DIRAC: A High Resolution Spectrometer for Pionium Detection

The DIRAC spectrometer has been commissioned at CERN with the aim of detecting $\pi^+ \pi^-$ atoms produced by a 24 GeV/$c$ high intensity proton beam in thin foil targets. A challenging apparatus is required to cope with the high interaction rates involved, the triggering of pion pairs with very low relative momentum, and the measurement of the latter with resolution around 0.6 MeV/$c$. The general characteristics of the apparatus are explained and each part is described in some detail. The main features of the trigger system, data-acquisition, monitoring and setup performances are also given.Comment: 49 pages, 37 figures. Figures 1, 2, 5 and 28 are removed because of size limitations imposed by hep-ex. They don't offer essential information. Latex class file 'elsart.cls' also provide

What is the Effect of Critical Surface Tension of PbSO3 Thin Film?

This study focuses on the critical surface tension of lead sulfite (PbSO3) crystalline thin film produced with chemical bath deposition on substrates (commercial glass).The PbSO3 thin films were deposited at room temperature at different deposition times. The structural properties of the films were defined and examined according to X-ray diffraction (XRD) and the XRD results such as dislocation density, average grain size, and no. of crystallites per unit area. Atomic force microscopy was used to measure the film thickness and the surface properties. The critical surface tension of the PbSO3 thin films was measured with an optical tensiometer instrument and calculated using the Zisman method. The results indicated that the critical surface tension of films changed in accordance with the average grain size and film thickness. The film thickness increased with deposition time and was inversely correlated with surface tension. The average grain size increased according to deposition time and was inversely correlated with surface tension