Modeling of temperature fields in the working chamber of the process furnace for REE synthesis

The results of mathematical modeling of temperature fields in the working chamber of the process furnace for special purposes are shown. Studied laboratory furnace is test equipment, which is used for practicing the stages of the technological process of continuous solid-phase synthesis of nanopowders of various purpose, such as obtaining of luminophore powders with rare earth elements oxides in its composition. Mathematical model adequacy is tested empirically

Increasing the quantum efficiency of InAs/GaAs QD arrays for solar cells grown by MOVPE without using strain-balance technology

Research into the formation of InAs quantum dots (QDs) in GaAs using the metalorganic vapor phase epitaxy technique ispresented. This technique is deemed to be cheaper than the more often used and studied molecular beam epitaxy. The bestconditions for obtaining a high photoluminescence response, indicating a good material quality, have been found among awide range of possibilities. Solar cells with an excellent quantum ef?ciency have been obtained, with a sub-bandgapphoto-response of 0.07 mA/cm2per QD layer, the highest achieved so far with the InAs/GaAs system, proving the potentialof this technology to be able to increase the ef?ciency of lattice-matched multi-junction solar cells and contributing to abetter understanding of QD technology toward the achievement of practical intermediate-band solar cells

81 fJ/bit energy-to-data ratio of 850 nm vertical-cavity surface-emitting lasers for optical interconnects

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 98, 231106 (2011) and may be found at https://doi.org/10.1063/1.3597799.Extremely energy-efficient oxide-confined high-speed 850 nm vertical-cavity surface-emitting lasers for optical interconnects are presented. Error-free performance at 17 and 25 Gb/s via a 100 m multimode fiber link is demonstrated at record high dissipation-power-efficiencies of up to 69 fJ/bit (<0.1mW/Gbps) and 99 fJ/bit, respectively. These are the most power efficient high-speed directly modulated light sources reported to date. The total energy-to-data ratio is 83 fJ/bit at 25°C and reduces to 81 fJ/bit at 55°C. These results were obtained without adjustment of driving conditions. A high -factor of 12.0GHz/(mA)0.5 and a -factor of 0.41 ns are measured.EC/FP7/224211/EU/VISIT - Vertically Integrated Systems for Information Transfer/VISITDFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelement

Highly temperature-stable modulation characteristics of multioxide-aperture high-speed 980 nm vertical cavity surface emitting lasers

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 97, 151101 (2010) and may be found at https://doi.org/10.1063/1.3499361.We present multioxide-aperture 980 nm-range vertical cavity surface emitting lasers (VCSELs) with highly temperature stable modulation characteristics operating error-free at 25 Gbit/s at 25 and 85°C. We perform small signal modulation experiments and extract the fundamental physical parameters including relaxation resonance frequency, damping factor, parasitic cut-off frequency, -factor, and -factor, leading to identification of thermal processes and damping as the main factors that presently limit high speed device operation. We obtain very temperature-insensitive bandwidths around 13–15 GHz. Presented results clearly demonstrate the suitability of our VCSELs for practical and reliable optical data transmission systems.EC/FP7/224211/EU/VISIT - Vertically Integrated Systems for Information Transfer/VISITDFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelement

Near field scanning optical microscopy for investigation of high power semiconductor lasers

В данной работе были исследованы карты распределения ближнего поля InGaAs/GaAs/AlGaAs полосковых инжекционных лазеров при различных токах накачки. Было показано, что в структурах, состоящих из двух резонансно связанных волноводов, наблюдается подавление мод высоких порядков.Near field intensity distributions of InGaAs/GaAs/AlGaAs lasers including broadened waveguides based on coupled large optical cavity (CLOC) structures were investigated. It was demonstrated that scanning near field optical microscopy gives direct proof of suppressing the transverse high-order mode lasing.Работа выполнена при поддержке РНФ (соглашение № 14-42-00006-П