„Bo królom był równy…” Sprowadzenie szczątków Juliusza Słowackiego w 1927 roku jako dramat społeczny Victora Turnera

Niniejszy artykuł poświęcony jest jednemu z największych widowisk społeczno-politycznych II Rzeczypospolitej – sprowadzeniu prochów Juliusza Słowackiego do Polski oraz powtórnego pogrzebu poety w czerwcu 1927 r. Punktem wyjścia analizy owego wydarzenia stanowi klasyczna kategoria rytuału przejścia (le rite de passage) Arnolda van Gennepa, z której wyrasta teoria czteroaktowego dramatu społecznego Victora Turnera, w ramach której rozpatrywane jest owe widowisko. Oprócz tła historycznego (kolejnych prób sprowadzenia prochów J. Słowackiego do Polski na przestrzeni dekad przełomu XIX i XX w.), w artykule wskazane zostały zasadnicze cele jakie przyświecały decydentom politycznym połowy lat 20. XX w., podjęcia się owego przedsięwzięcia, jego rolę dla rodzącego się, po maju 1926 r., nowego systemu politycznego, w Polsce oraz jego szczególne znaczenie dla obozu sanacji oraz samego Józefa Piłsudskiego. Oprócz przebiegu ostatniej podróży autora Kordiana, w tekście poddane analizie zostały poszczególne elementy składowe widowiska, przede wszystkim zaś jego scenografia oraz jej znaczenie.This article is devoted to one of the largest socio-political spectacles of the Second Polish Republic – bringing the ashes of Juliusz Słowacki to Poland and the re-burial of the poet in June of 1927. The starting point for the analysis of this event is the classical category the rite of passage of Arnold van Gennep, from which the theory of four-act social drama by Victor Turner emerges, in which the spectacle is considered. In addition to the historical background (subsequent attempts to bring the ashes of J. Słowacki to Poland over the decades of the turn of the 19th and 20th centuries), the article indicates the main goals that guided political decision-makers in the mid-1920s wanted to achieve by this event, its role for a new political system in Poland (after May 1926) and its special significance for the Sanation and for Józef Piłsudski himself. In addition to the course of the last journey of Kordian’s author, the text analyzed various elements of the spectacle, and above all, its scenography and its meaning

Scalable quantum photonic devices emitting indistinguishable photons in the telecom C-band

Epitaxial semiconductor quantum dots (QDs) are a promising resource for quantum light generation and the realization of non-linear quantum photonic elements operating at the single-photon level. Their random spatial distribution resulting from their self-organized nature, however, restrains the fabrication yield of quantum devices with the desired functionality. As a solution, the QDs can be imaged and localized, enabling deterministic device fabrication. Due to the significant electronic noise of camera sensors operating in the telecommunication C-band, $1530-1560~\mathrm{nm}$, this technique remained challenging. In this work, we report on the imaging of QDs epitaxially grown on InP with emission wavelengths in the telecom C-band demonstrating a localization accuracy of $80~\mathrm{nm}$. This is enabled by the hybrid integration of QDs in a planar sample geometry with a bottom metallic reflector to enhance the out-of-plane emission. To exemplify our approach, we successfully fabricate circular Bragg grating cavities around single pre-selected QDs with an overall cavity placement uncertainty of $90~\mathrm{nm}$. QD-cavity coupling is demonstrated by a Purcell enhancement up to $\sim5$ with an estimated photon extraction efficiency of $(16.6\pm2.7)\%$ into a numerical aperture of $0.4$. We demonstrate triggered single-photon emission with $g^{(2)}(0)=(3.2\pm0.6)\times10^{-3}$ and record-high photon indistinguishability associated with two-photon interference visibilities of $V = (19.3\pm2.6)\%$ and $V_{\mathrm{PS}} = 99.8^{+0.2}_{-2.6}\%$ without and with temporal postselection, respectively. While the performance of our devices readily enables proof-of-principle experiments in quantum information, further improvements in the yield and coherence may enable the realization of non-linear devices at the single photon level and advanced quantum networks at the telecom wavelength.Comment: 9 pages, 4 figures, Supplemental Material: 20 pages, 18 figure

Multi-dimensional modeling and simulation of semiconductor nanophotonic devices

Self-consistent modeling and multi-dimensional simulation of semiconductor nanophotonic devices is an important tool in the development of future integrated light sources and quantum devices. Simulations can guide important technological decisions by revealing performance bottlenecks in new device concepts, contribute to their understanding and help to theoretically explore their optimization potential. The efficient implementation of multi-dimensional numerical simulations for computer-aided design tasks requires sophisticated numerical methods and modeling techniques. We review recent advances in device-scale modeling of quantum dot based single-photon sources and laser diodes by self-consistently coupling the optical Maxwell equations with semiclassical carrier transport models using semi-classical and fully quantum mechanical descriptions of the optically active region, respectively. For the simulation of realistic devices with complex, multi-dimensional geometries, we have developed a novel hp-adaptive finite element approach for the optical Maxwell equations, using mixed meshes adapted to the multi-scale properties of the photonic structures. For electrically driven devices, we introduced novel discretization and parameter-embedding techniques to solve the drift-diffusion system for strongly degenerate semiconductors at cryogenic temperature. Our methodical advances are demonstrated on various applications, including vertical-cavity surface-emitting lasers, grating couplers and single-photon sources

Necropolitics: political dimensions of the burials of Polish writers on the example of bringing to Poland the ashes of Juliusz Słowacki in 1927 and Stanisław Ignacy Witkiewicz in 1988

The article is devoted to comparative analysis of two repatriations: bringing ashes of Juliusz Słowacki in 1927 and bringing remains of Stanisław Ignacy Witkiewicz in 1988. Both these events, being socio-political performances, fit into the broader concept of necropolitics, in which they are analyzed. The article compares the causes of the political nature of these ceremonies, their conduct, public reception and the effectiveness of counteracting the socio-political crisis, which was one of the main reasons for reaching for the funeral ritual by the rulers. The main purpose of the article, in addition to the comparative analysis of the above elements, is to emphasize the political dimension of mourning ceremonies, which can successfully be the subject of research in political science

„Polskie miesiące” na scenie. Teatralny wymiar kryzysów społeczno-politycznych w PRL

Teatr jako „najbardziej społeczna ze sztuk” wchodzi w interakcje z publicznością, otaczającą rzeczywistością oraz najszybciej i najtrafniej reaguje na zmiany społeczne. Nierzadko scena te przemiany sama prokuruje lub katalizuje. Artykuł jest poświęcony społeczno-politycznemu wymiarowi teatru w Polsce „ludowej” w momentach kryzysow. Oprocz wpływu „polskich miesięcy” i stanu wojennego na kształt i treść polskiej sceny w artykule ukazano wybrane reminiscencje tych wydarzeń w teatrze oraz katalizującą funkcję sztuki teatralnej, objawiającą się w okresach przełomowych

Quantum efficiency and oscillator strength of InGaAs quantum dots for single-photon sources emitting in the telecommunication O-band

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 119, 061103 (2021) and may be found at https://doi.org/10.1063/5.0059458.We demonstrate experimental results based on time-resolved photoluminescence spectroscopy to determine the oscillator strength and the internal quantum efficiency (IQE) of InGaAs quantum dots (QDs). Using a strain-reducing layer, these QDs can be employed for the manufacturing of single-photon sources emitting in the telecom O-Band. The oscillator strength and IQE are evaluated by determining the radiative and non-radiative decay rates under the variation of the optical density of states at the position of the QD for InGaAs QDs emitting at wavelengths below 1 μm. For this purpose, we perform measurements on a QD sample for different thicknesses of the capping layer realized by a controlled wet-chemical etching process. From numeric modeling of the radiative and non-radiative decay rates dependence on the capping layer thickness, we determine an oscillator strength of 24.6 ± 3.2 and a high IQE of (85 ± 10)% for the long-wavelength InGaAs QDs.DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, BauelementeBMBF, 13N14876, Quantenkommunikations-Systeme auf Basis von Einzelphotonenquellen (QuSecure