Europium-doped sesquioxide thin films grown on sapphire by PLD

This paper focuses on the preparation and characterization of crystalline thin films of rare-earth-doped sesquioxides (Y2O3, Lu2O3,and Sc2O3) grown by pulsed laser deposition (PLD) on single-crystal (0 0 0 1) sapphire substrates. X-ray diffraction (XRD) measurements show that the films with thicknesses between 1 and 500 nm were highly textured along the [1 1 1] direction. Using Rutherford backscattering (RBS) analysis the correct stoichiometric composition of the films could be proved. The emission and excitation spectra of the europium-doped films down to a thickness of 100 nm look similar to those of the corresponding crystalline bulk material, whereas films with 20 nm thickness and below show a completely different emission behavior. © 2003 Elsevier B.V.The present work was supported by the Deutsche Forschungsgemeinschaft (Graduiertenkolleg 463) and this research has also been supported by a Marie Curie Fellowship (HPMT-GH-00-00064-06, awarded to S. Bär) of the European Community Program (HPMT-CT-00-00064).Peer Reviewe

Europium-doped sesquioxide thin films grown on sapphire by PLD

This paper focuses on the preparation and characterization of crystalline thin films of rare-earth-doped sesquioxides (Y2O3, Lu2O3,and Sc2O3) grown by pulsed laser deposition (PLD) on single-crystal (0 0 0 1) sapphire substrates. X-ray diffraction (XRD) measurements show that the films with thicknesses between 1 and 500 nm were highly textured along the [1 1 1] direction. Using Rutherford backscattering (RBS) analysis the correct stoichiometric composition of the films could be proved. The emission and excitation spectra of the europium-doped films down to a thickness of 100 nm look similar to those of the corresponding crystalline bulk material, whereas films with 20 nm thickness and below show a completely different emission behavior. © 2003 Elsevier B.V.The present work was supported by the Deutsche Forschungsgemeinschaft (Graduiertenkolleg 463) and this research has also been supported by a Marie Curie Fellowship (HPMT-GH-00-00064-06, awarded to S. Bär) of the European Community Program (HPMT-CT-00-00064).Peer Reviewe

Tin dioxide sol-gel derived films doped with platinum and antimony deposited on porous silicon

SnO2 sol-gel derived thin films doped simultaneously with Pt and Sb are obtained and reported for the first time. The Sn sources were tin(IV) ethoxide or tin(II) ethylhexanoate, while hexachloroplatinic acid (H2PtCl6) and antimony chloride (SbCl3) were used as platinum and antimony sources, respectively. Transparent, crack-free layers, deposited on silicon or porous silicon (PS) substrates were obtained with antimony doping in the range (0–2)% M, while the platinum addition was limited to maximum 1% M, due to the strong acidic character of the Pt and Sb precursors. Ternary sol (Pt:Sb:SnO2) stability was analysed by viscosity studies while the surface roughness of the doped SnO2 layers on both types of substrates was investigated by atomic force microscopy (AFM) measurements. Rutherford Backscattering spectra (RBS) analysis proved that pores of PS substrates had been filled as a result of multiple spin-casting processes

Optical and structural characterization of Erbium-doped ion-implanted tellurite glasses for active integrated optical devices

Erbium-doped tellurite glasses show great potential for the fabrication of high-performance integrated optical amplifiers and lasers, thanks to their unique properties in terms of bandwidth and rare earth solubility. As a first step towards the development of smart multi-functional integrated optical circuits, the fabrication of multimode channel waveguides in a sodium-tungsten-tellurite glass, by using nitrogen ions implantation, has been recently demonstrated [1]. The effects of the ion implantation process, however, have not been fully clarified, and a deeper investigation would be necessary in order to optimize the process and to truly exploit the glass useful characteristics. We therefore report here the results of a broad optical, topographic, and structural characterization of tellurite samples irradiated with various doses of nitrogen ions, while keeping constant the beam energy at 1.5 MeV. Characterization techniques have included absorption and luminescence spectroscopy, modal (dark-line) spectroscopy, surface profilometry, scanning electron microscopy, cathodoluminescence spectroscopy and EDX analysis. \ua9 2008 Trans. Tech. Publications, Switzerland