Defect distribution in a-plane GaN on Al2O3

The authors studied the structural and point defect distributions of hydride vapor phase epitaxial GaN film grown in the [11−20] a direction on (1−102) r-plane sapphire with metal-organic vapor phase deposited a-GaN template using transmission electron microscopy, secondary ion mass spectrometry, and positron annihilation spectroscopy. Grown-in extended and point defects show constant behavior as a function of thickness, contrary to the strong nonuniform defect distribution observed in GaN grown along the [0001] direction. The observed differences are explained by orientation-dependent and kinetics related defect incorporation.Peer reviewe

InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes

Ballistic and quasiballistic electron transport across the active InGaN layer are shown to be responsible for electron overflow and electroluminescence efficiency droop at high current levels in InGaN light emitting diodes both experimentally and by first-order calculations. An InGaN staircase electron injector with step-like increased In composition, an “electron cooler,” is proposed for an enhanced thermalization of the injected hot electrons to reduce the overflow and mitigate the efficiency droop. The experimental data show that the staircase electron injector results in essentially the same electroluminescence performance for the diodes with and without an electron blocking layer, confirming substantial electron thermalization. On the other hand, if no InGaN staircase electron injector is employed, the diodes without the electron blocking layer have shown significantly lower (three to five times) electroluminescence intensity than the diodes with the blocking layer. These results demonstrate a feasible method for the elimination of electron overflow across the active region, and therefore, the efficiency droop in InGaN light emitting diodes

Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy

The effect of high-temperature high-pressure annealing on the residual strain, bending, and point defect redistribution of freestanding hydride vapor phase epitaxial GaN films was studied. The bending was found to be determined by the difference in the in-plane lattice parameters in the two faces of the films. The results showed a tendency of equalizing the lattice parameters in the two faces with increasing annealing temperature, leading to uniform strain distribution across the film thickness. A nonmonotonic behavior of structural parameters with increasing annealing temperature was revealed and related to the change in the point defect content under the high-temperature treatment.Peer reviewe

Anisotropic strain and phonon deformation potentials in GaN

We report optical phonon frequency studies in anisotropically strained c-plane- and a-plane-oriented GaN films by generalized infrared spectroscopic ellipsometry and Raman scattering spectroscopy. The anisotropic strain in the films is obtained from high-resolution x-ray diffraction measurements. Experimental evidence for splitting of the GaN E1(TO), E1(LO), and E2 phonons under anisotropic strain in the basal plane is presented, and their phonon deformation potentials cE1(TO) , cE1(LO) , and cE2 are determined. A distinct correlation between anisotropic strain and the A1(TO) and E1(LO) frequencies of a-plane GaN films reveals theaA1TO, bA1TO, aE1LO, andbE1LO phonon deformation potentials. The aA1TO and bA1TOaA1TO and aE1LO phonon deformation potentials agree well with recently reported theoretical estimations [J.-M. Wagner and F. Bechstedt, Phys. Rev. B 66, 115202 (2002)], while bA1TO and bE1LO are found to be significantly larger than the theoretical values. A discussion of the observed differences is presented

Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method

Cracks appeared in GaN epitaxial layers which were grown by a novel method combining metal organic vapor-phase epitaxy (MOCVD) and hydride vapor-phase epitaxy (HVPE) in one chamber. The origin of cracks in a 22-μm thick GaN film was fully investigated by high-resolution X-ray diffraction (XRD), micro-Raman spectra, and scanning electron microscopy (SEM). Many cracks under the surface were first observed by SEM after etching for 10 min. By investigating the cross section of the sample with high-resolution micro-Raman spectra, the distribution of the stress along the depth was determined. From the interface of the film/substrate to the top surface of the film, several turnings were found. A large compressive stress existed at the interface. The stress went down as the detecting area was moved up from the interface to the overlayer, and it was maintained at a large value for a long depth area. Then it went down again, and it finally increased near the top surface. The cross-section of the film was observed after cleaving and etching for 2 min. It was found that the crystal quality of the healed part was nearly the same as the uncracked region. This indicated that cracking occurred in the growth, when the tensile stress accumulated and reached the critical value. Moreover, the cracks would heal because of high lateral growth rate

Modeling of the free-electron recombination band in emission spectra of highly conducting n-GaN

We simulate the spectral distribution of the free-electron recombination band in optical emission spectra of GaN with a free-carrier concentration in the range of 5×10¹⁷-1×10²⁰cm⁻³. The influence of several factors, such as nonparabolicity, electron-electron interaction, and electron-impurity interaction on both the spectral shape and energy position and the effective gap narrowing are taken into account. The calculated properties of the free-electron-related emission bands are used to interpret the experimental photoluminescence and cathodoluminescence spectra of GaN epitaxial layers.12 page(s

Interfacial structure of a-plane GaN grown on r-plane sapphire

The interface between a-plane GaN, grown by metal organic vapor phase epitaxy and hydride vapor phase epitaxy, and r-plane sapphire was investigated by transmission electron microscopy in [1−100] and [0001] zone axis orientations. The interfacial structure was well defined allowing a direct observation of the misfit dislocations in both orientations. An analysis of these dislocations revealed for the respective Burgers vectors a 1/32−1−10 component in the {0002} planes and a 1/20001 component in the {1−100} planes. In addition, the relative atomic column configurations in the GaN and sapphire were determined based on Bloch-wave simulations in comparison with the experimental images

Cathodoluminescence imaging for the determination of dislocation density in differently doped HVPE GaN

In this study we report the potential and limitations of the cathodoluminescence dark spot (DS) counting as a method for the determination of dislocation density and distribution in GaN, produced by the hydride vapour phase epitaxy (HVPE). Different GaN sample series (s.i. GaN:Fe and n-type GaN:Si) were used, in order to study the dependence of the results of the DS-counting on the dopant type and concentration. By the direct comparison of these results to classical defect selective etching, the DS-measurements were validated. It could be shown that each of the both methods have their particular restrictions, which must be considered in their application