Unveiling the Direct Correlation between the CVD-Grown Graphene and the Growth Template

Chemical vapor deposition (CVD) is known to produce continuous, large-area graphene sheet with decent physical properties. In the CVD process, catalytic metal substrates are typically used as the growth template, and copper has been adopted as the representative material platform due to its low carbon solubility and resulting monolayer graphene growth capability. For the widespread industrial applications of graphene, achieving the high-quality is essential. Several factors affect the qualities of CVD-grown graphene, such as pressure, temperature, carbon precursors, or growth template. In this work, we provide detailed analysis on the direct relation between the metallic growth substrate (copper) and overall properties of the resulting CVD-grown graphene. The surface morphology of copper substrate was modulated via simple chemical treatments, and its effect on physical, optical, and electrical properties of graphene was analyzed. Based on these results, we propose a simple synthesis route to produce high-quality, continuous, monolayer graphene sheet, which can facilitate the commercialization of CVD graphene into realit

Valence band structure and band offset of 3C- and 4H-SiC studied by ballistic hole emission microscopy

p-type Schottky barriers in Pt/3C-SiC contacts have been measured using ballistic hole emission microscopy (BHEM) and estimated to be ???0.06 eV higher than identically prepared Pt/p-type 4H-SiC contacts. This indicates the 3C-SiC valence band maximum (VBM) is ???0.06 eV below the 4H-SiC VBM, consistent with the calculated ???0.05 eV type-II valence band offset between these polytypes. We also observe no evidence of an additional VBM in 3C-SiC, which supports the proposal that the second VBM observed in BHEM spectra on 4H-SiC is a crystal-field split VBM located ???110 meV below the highest VBM.open6

Plasmonic Terahertz Wave Detector Based on Silicon Field-Effect Transistors with Asymmetric Source and Drain Structures

In this paper, we present the validity and potential capacity of a modeling and simulation environment for the nonresonant plasmonic terahertz (THz) detector based on the silicon (Si) field-effect transistor (FET) with a technology computer-aided design (TCAD) platform. The nonresonant and "overdamped" plasma-wave behaviors have been modeled by introducing a quasi-plasma electron charge box as a two-dimensional electron gas (2DEG) in the channel region only around the source side of Si FETs. Based on the coupled nonresonant plasma-wave physics and continuity equation on the TCAD platform, the alternate-current (AC) signal as an incoming THz wave radiation successfully induced a direct-current (DC) drain-to-source output voltage as a detection signal in a sub-THz frequency regime under the asymmetric boundary conditions with a external capacitance between the gate and drain. The average propagation length and density of a quasi-plasma have been confirmed as around 100 nm and 1x10(19)/cm(3), respectively, through the transient simulation of Si FETs with the modulated 2DEG at 0.7 THz. We investigated the incoming radiation frequency dependencies on the characteristics of the plasmonic THz detector operating in sub-THz nonresonant regime by using the quasi-plasma modeling on TCAD platform. The simulated dependences of the photoresponse with quasi-plasma 2DEG modeling on the structural parameters such as gate length and dielectric thickness confirmed the operation principle of the nonresonant plasmonic THz detector in the Si PET structure. The proposed methodologies provide the physical design platform for developing novel plasmonic THz detectors operating in the nonresonant detection mode.open3

Capacitive Heart-Rate Sensing on Touch Screen Panel with Laterally Interspaced Electrodes

It is demonstrated that the heart-rate can be sensed capacitively on a touch screen panel (TSP) together with touch signals. The existing heart-rate sensing systems measure blood pulses by tracing the amount of light reflected from blood vessels during a number of cardiac cycles. This type of sensing system requires a considerable amount of power and space to be implemented in multi-functional mobile devices such as smart phones. It is found that the variation of the effective dielectric constant of finger stemming from the difference of systolic and diastolic blood flows can be measured with laterally interspaced top electrodes of TSP. The spacing between a pair of non-adjacent top electrodes turns out to be wide enough to distinguish heart-rate signals from noises. With the aid of fast Fourier transform, the heart-rate can be extracted reliably, which matches with the one obtained by actually counting heart beats on the wrist

Dependence of spontaneous polarization on stacking sequence in SiC revealed by local Schottky barrier height variations over a partially formed 8H-SiC layer on a 4H-SiC substrate

Ballistic electron emission microscopy was used to measure the increase of local Schottky barrier (compared to the surrounding 4H-SiC area) over a partial 8H-SiC layer that is the surface-exposed tail of an 8H stacking fault inclusion extending from 4H substrate. This local increase is believed to be due to polarization charge induced at the interface of partial 8H layer and underlying 4H host, resulting from the spontaneous polarization (SP) difference between SiC regions with different bilayer stacking. This is a direct experimental probe of the dependence of SP in SiC on local stacking sequence by measuring carrier transport.open1

Schottky Barrier Modulation of Metal/4H-SiC Junction with Thin Interface Spacer Driven by Surface Polarization Charge on 4H-SiC Substrate

The Au/Ni/Al2O3/4H-SiC junction with the Al2O3 film as a thin spacer layer was found to show the electrical characteristics of a typical rectifying Schottky contact, which is considered to be due to the leakiness of the spacer layer. The Schottky barrier of the junction was measured to be higher than an Au/Ni/4H-SiC junction with no spacer layer. It is believed that the negative surface bound charge originating from the spontaneous polarization of 4H-SiC causes the Schottky barrier increase. The use of a thin spacer layer can be an efficient experimental method to modulate Schottky barriers of metal/4H-SiC junctions.open

Self-selective ferroelectric memory realized with semimetalic graphene channel

A new concept of read-out method for ferroelectric random-access memory (FeRAM) using a graphene layer as the channel material of bottom-gated field effect transistor structure is demonstrated experimentally. The transconductance of the graphene channel is found to change its sign depending on the direction of spontaneous polarization (SP) in the underlying ferroelectric layer. This indicates that the memory state of FeRAM, specified by the SP direction of the ferroelectric layer, can be sensed unambiguously with transconductance measurements. With the proposed read-out method, it is possible to construct an array of ferroelectric memory cells in the form of a cross-point structure where the transconductance of a crossing cell can be measured selectively without any additional selector. This type of FeRAM can be a plausible solution for fabricating high speed, ultra-low power, long lifetime, and high density 3D stackable non-volatile memory

Low-cost and Fast-response Resistive Humidity Sensor Comprising Biopolymer-derived Carbon Thin Film and Carbon Microelectrodes

In this study, we present a highly responsive room-temperature resistive humidity sensor based on a shellac-derived carbon (SDC) active film deposited on sub-micrometer-sized carbon interdigitated electrodes (cIDEs). This monolithic carbon-based sensor demonstrates excellent linear relationship with humidity and ohmic contact between the active carbon film and carbon electrodes, which results in low noise and low power consumption (similar to 1 mW). The active SDC film is synthesized by a single-step thermal process, wherein the temperature is found to control the amount of oxygen functional moieties of the SDC film, thereby providing an efficient means to optimize the sensor response time, recovery time, and sensitivity. This SDC-cIDEs-based humidity sensor exhibits an excellent dynamic range (0%-90% RH), a large dynamic response (50%), and high sensitivity (0.54/% RH). In addition, the two-dimensional feature (thickness similar to 10 nm) of the SDC film enables a swift absorption/desorption equilibrium, leading to fast response (similar to 0.14 s) and recovery (similar to 1.7 s) under a humidity range of 0%-70% RH. Furthermore, the thin SDC-based sensor exhibited excellent selectivity to humidity from various gases, which in combination with its fast response/recovery promises it application for an instant calibration tool for gas sensors

Low-temperature formation of epitaxial graphene on 6H-SiC induced by continuous electron beam irradiation

It is observed that epitaxial graphene forms on the surface of a 6H-SiC substrate by irradiating electron beam directly on the sample surface in high vacuum at relatively low temperature (similar to 670 degrees C). The symmetric shape and full width at half maximum of 2D peak in the Raman spectra indicate that the formed epitaxial graphene is turbostratic. The gradual change of the Raman spectra with electron beam irradiation time increasing suggests that randomly distributed small grains of epitaxial graphene form first and grow laterally to cover the entire irradiated area. The sheet resistance of epitaxial graphene film is measured to be similar to 6.7 k Omega/sq.open4