Switching to integrase inhibitors unlinked to weight increase in perinatally HIV-infected young adults and adolescents: A 10-year observational study

An unexpected increase in weight gain has recently been reported in the course of integrase strand transfer inhibitors (INSTI) treatment. The possibility of this effect in people who are perinatally infected with HIV (PHIV) and thus exposed to lifelong therapy needs to be explored. This is a retrospective multicenter case-control study. Adults with PHIV followed between 2010 and 2019 in two outpatient services in Northern Italy were included if they had at least two weight measures in two successive years of observation. Patients were considered as cases if they were switched to INSTI (INSTI group), or controls if they were never exposed to INSTI (non-INSTI group). The date of the switch in cases was considered to be the baseline (T0), while it was randomly selected in controls. Mixed effect models were used to assess the weight changes in INSTI and non-INSTI groups. A total of 66 participants, 50.0% women, 92.4% Caucasian, were included. Median follow-up was 9 years (range 2\u201310): 4 years (range 1\u20138) before and 3 (range 1\u20139) after-T0 . Mean age at the last study visit was 27.3 (\ub14.8) years, and mean CD4+ T-cells were 820.8 (\ub1323.6) cells/mm3 . Forty-five patients were switched to INSTI during the study, while 21 remained in the non-INSTI group. The INSTI group experienced a mean increase (pre-post T0) in bodyweight of 0.28 kg/year (95% CI 12 0.29; 0.85, p = 0.338), while in the non-INSTI group, the mean increase was 0.36 kg/year (95% CI 12 0.47; 1.20, p = 0.391), without a significant difference between groups (p for interaction between time and treatment regimen = 0.868). Among patients on INSTI, the weight gain after T0 was higher than pre-T0, amounting to +0.28 kg/year (95% CI 12 0.29; 0.85), although this difference did not reach significance (p = 0.337). PHIV switched to an INSTI-based regimen did not experience an excessive weight gain compared to those who were treated with a non-INSTI based regimen in our cohort

Reliability of RF MEMS switches due to charging effects and their circuital modelling

The reliability of RF MEMS switches is typically reduced by charging effects occurring in the dielectrics. The aim of this paper is to discuss these effects, and to propose analytical and equivalent circuit models which account for most of the physical contributions present in the structure. © 2009 Springer-Verlag

Reliability of RF MEMS switches due to charging effects and their circuital modelling

The reliability of RF MEMS switches is typically reduced by charging effects occurring in the dielectrics. The aim of this paper is to discuss these effects, and to propose analytical and equivalent circuit models which account for most of the physical contributions present in the structure

Dielectric charging in microwave microelectromechanical Ohmic series and capacitive shunt switches

The charging of the dielectric used for the actuation in microelectromechanical system (MEMS) devices is one of the major failure sources for switches based on this technology. For this reason, a better understanding of such an effect is vital to improve the reliability for both ground and space applications. In this paper, the expected response of MEMS switches to unipolar and bipolar dc actuation voltages has been measured and modeled. Two configurations of MEMS switches, namely, an Ohmic series and a shunt capacitive one designed for microwave applications, have been studied as a test vehicle for charging effects related to the dc actuation pads. The recorded data have been interpreted mainly through the Poole-Frenkel effect due to charge injection when a high voltage is applied to the dielectric layer. Metal-Insulator-Metal (MIM) structures have been also considered as a complementary information for the response of the dielectric material. © 2009 American Institute of Physics

Reliability of RF MEMS switches due to charging effects and their circuital modelling

The reliability of RF MEMS switches is typically reduced by charging effects occurring in the dielectrics. The aim of this paper is to discuss these effects, and to propose analytical and equivalent circuit models which account for most of the physical contributions present in the structure

Charging Effects and related Equivalent Circuits for Ohmic Series and Shunt Capacitive RF MEMS Switches

Charging effects in dielectrics are currently considered as the major limiting factor for the reliability of RF MEMS switches. In this paper, an ohmic series switch and a shunt capacitive one are studied for modeling the charging contributions due to the actuation pads used for the electrostatic actuation of the device. For simulation purposes, a lumped circuit based on equivalent capacitances can be defined

Charging Effects and related Equivalent Circuits for Ohmic Series and Shunt CapacitiveRF MEMS switches

Charging effects in dielectrics are currently considered as the major limiting factor for the reliability of RF MEMS switches. In this paper, an ohmic series switch and a shunt capacitive one are studied for modeling the charging contributions due to the actuation pads used for the electrostatic actuation of the device. For simulation purposes, a lumped circuit based on equivalent capacitances can be defined