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Reliability of RF MEMS switches due to charging effects and their circuital modelling
Authors
R. Marcelli Bartolucci, G. Papaioannu, G. De Angelis, G. Lucibello, A. Proietti, E. Margesin, B. Giacomozzi, F. Deborgies, F.
Publication date
1 January 2010
Publisher
Abstract
The reliability of RF MEMS switches is typically reduced by charging effects occurring in the dielectrics. The aim of this paper is to discuss these effects, and to propose analytical and equivalent circuit models which account for most of the physical contributions present in the structure. © 2009 Springer-Verlag
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Last time updated on 10/02/2023
