Dependence of heat transport on the strength and shear rate of prescribed circulating flows

We study numerically the dependence of heat transport on the maximum velocity and shear rate of physical circulating flows, which are prescribed to have the key characteristics of the large-scale mean flow observed in turbulent convection. When the side-boundary thermal layer is thinner than the viscous boundary layer, the Nusselt number (Nu), which measures the heat transport, scales with the normalized shear rate to an exponent 1/3. On the other hand, when the side-boundary thermal layer is thicker, the dependence of Nu on the Peclet number, which measures the maximum velocity, or the normalized shear rate when the viscous boundary layer thickness is fixed, is generally not a power law. Scaling behavior is obtained only in an asymptotic regime. The relevance of our results to the problem of heat transport in turbulent convection is also discussed.Comment: 7 pages, 7 figures, submitted to European Physical Journal

The difference of boundary effects between Bose and Fermi systems

In this paper, we show that there exists an essential difference of boundary effects between Bose and Fermi systems both for Dirichlet and Neumann boundary conditions: at low temperatures and high densities the influence of the boundary on the Bose system depends on the temperature but is independent of the density, but for the Fermi case the influence of the boundary is independent of the temperature but depends on the density, after omitting the negligible high-order corrections. We also show that at high temperatures and low densities the difference of the influence of the boundary between Bose and Fermi systems appears in the next-to-leading order boundary contribution, and the leading boundary contribution is independent of the density. Moreover, for calculating the boundary effects at high temperatures and low densities, since the existence of the boundary modification causes the standard virial expansion to be invalid, we introduce a modified virial expansion.Comment: 8 page

Are spectroscopic factors from transfer reactions consistent with asymptotic normalisation coefficients?

It is extremely important to devise a reliable method to extract spectroscopic factors from transfer cross sections. We analyse the standard DWBA procedure and combine it with the asymptotic normalisation coefficient, extracted from an independent data set. We find that the single particle parameters used in the past generate inconsistent asymptotic normalization coefficients. In order to obtain a consistent spectroscopic factor, non-standard parameters for the single particle overlap functions can be used but, as a consequence, often reduced spectroscopic strengths emerge. Different choices of optical potentials and higher order effects in the reaction model are also studied. Our test cases consist of: $^{14}$C(d,p)$^{15}$C(g.s.) at $E_d^{lab}=14$ MeV, $^{16}$O(d,p)$^{17}$O(g.s.) at $E_d^{lab}=15$ MeV and $^{40}$Ca(d,p)$^{41}$Ca(g.s.) at $E_d^{lab}=11$ MeV. We underline the importance of performing experiments specifically designed to extract ANCs for these systems.Comment: 15 pages, 12 figures, Phys. Rev. C (in press

Evaluation of LS-DYNA MAT162 for Modeling Composite Fastener Joints for High Rates of Loading

In the present work, the behavior of composite-fastener joints in bearing failure at dynamic stroke rates of 500 in/s, 300 in/s and 100 in/s has been evaluated through progressive damage analysis (PDA) material model in LS-DYNA, namely MAT162. Two joint types: titanium pin and Hi-Lok fastener were analyzed to identify the differences between without and with preload conditions. A meso-level approach where each lamina was modeled separately was employed and a contact definition based on fracture toughness data was defined to represent composite delamination behavior. Test fixture had been modeled in a detailed manner to account for the dynamic effects and the simulation results were validated against experimental data. Preliminary test-analysis correlation indicated that MAT162 predicted results conservatively when compared to tests. Debris accumulation were observed to greatly affect the test results which were not considered in the current modelling strategies

Evaluating coverage bias in next-generation sequencing of Escherichia coli

Whole-genome sequencing is essential to many facets of infectious disease research. However, technical limitations such as bias in coverage and tagmentation, and difficulties characterising genomic regions with extreme GC content have created significant obstacles in its use. Illumina has claimed that the recently released DNA Prep library preparation kit, formerly known as Nextera Flex, overcomes some of these limitations. This study aimed to assess bias in coverage, tagmentation, GC content, average fragment size distribution, and de novo assembly quality using both the Nextera XT and DNA Prep kits from Illumina. When performing whole-genome sequencing on Escherichia coli and where coverage bias is the main concern, the DNA Prep kit may provide higher quality results; though de novo assembly quality, tagmentation bias and GC content related bias are unlikely to improve. Based on these results, laboratories with existing workflows based on Nextera XT would see minor benefits in transitioning to the DNA Prep kit if they were primarily studying organisms with neutral GC content

The influence of ion energy, ion flux, and etch temperature on the electrical and material quality of GaAs etched with an electron cyclotron resonance source

The residual damage incurred to GaAs via etching with a Cl2/Ar plasma generated by an electron cyclotron resonance (ECR) source was investigated as a function of variations in ion energy, ion flux, and etching temperature. The residual damage and electrical properties of GaAs were strongly influenced by changes in these etching parameters. Lattice damage was incurred in all processing situations in the form of small dislocation loops. GaAs etched at high ion energies with 200 W rf power, exhibited a defect density five times higher than GaAs etched at lower ion energies with 20 W rf power. This enhanced residual damage at the higher rf powers was paralleled by a degradation in the unannealed contact resistance. Higher etch rates, which accompany the higher rf power levels, caused the width of the disordered region to contract as the rf power was elevated. Therefore, the residual etch damage is influenced by both the generation and removal of defects. Increasing the microwave power or ion flux resulted in elevating the residual defect density, surface roughness, and unannealed contact resistance. GaAs etched at high temperatures, ∼350 °C, resulted in a lower contact resistance than GaAs etched at 25 °C. The high temperature etching augmented the defect diffusion which in turn lowered the near surface defect density. This decrease in residual damage was deemed responsible for improving the electrical performance at 350 °C. The electrical measurements were found to be more sensitive to the density of defects than the vertical extent of disorder beneath the etched surface. Results of this investigation demonstrate that in order to minimize material damage and improve electrical performance, etching with an ECR source should be performed at low rf and microwave powers with a high substrate temperature. © 1995 American Institute of Physics.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/70988/2/JAPIAU-78-4-2712-1.pd

Normal families and fixed points of iterates

Let F be a family of holomorphic functions and let K be a constant less than 4. Suppose that for all f in F the second iterate of f does not have fixed points for which the modulus of the multiplier is greater than K. We show that then F is normal. This is deduced from a result about the multipliers of iterated polynomials.Comment: 5 page