A first-principles study of bilayer 1T'-WTe2/CrI3: A candidate topological spin filter

The ability to manipulate electronic spin channels in 2D materials is crucial for realizing next-generation spintronics. Spin filters are spintronic components that polarize spins using external electromagnetic fields or intrinsic material properties like magnetism. Recently, topological protection from backscattering has emerged as an enticing feature through which the robustness of 2D spin filters might be enhanced. In this work, we propose and then characterize one of the first 2D topological spin filters: bilayer CrI3/1T'-WTe2. To do so, we use a combination of Density Functional Theory and maximally localized Wannier functions to demonstrate that the bilayer (BL) satisfies the principal criteria for being a topological spin filter; namely that it is gapless, exhibits charge transfer from WTe2 to CrI3 that renders the BL metallic despite the CrI3 retaining its monolayer ferromagnetism, and does not retain the topological character of monolayer 1T'-WTe2. In particular, we observe that the atomic magnetic moments on Cr from DFT are approximately 3.2 mB/Cr in the BL compared to 2.9 mB/Cr with small negative ferromagnetic (FM) moments induced on the W atoms in freestanding monolayer CrI3. Subtracting the charge and spin densities of the constituent monolayers from those of the BL further reveals spin-polarized charge transfer from WTe2 to CrI3. We find that the BL is topologically trivial by showing that its Chern number is zero. Altogether, this evidence indicates that BL 1T'-WTe2/CrI3 is gapless, magnetic, and topologically trivial, meaning that a terraced WTe2/CrI3 BL heterostructure in which only a portion of a WTe2 monolayer is topped with CrI3 is a promising candidate for a 2D topological spin filter. Our results further suggest that 1D chiral edge states may be realized by stacking strongly hybridized FM monolayers, like CrI3, atop 2D nonmagnetic Weyl semimetals like 1T'-WTe2

Defects go green: using defects in nanomaterials for renewable energy and environmental sustainability

Induction of point defects in nanomaterials can bestow upon them entirely new physics or augment their pre-existing physical properties, thereby expanding their potential use in green energy technology. Predicting structure-property relationships for defects a priori is challenging, and developing methods for precise control of defect type, density, or structural distribution during synthesis is an even more formidable task. Hence, tuning the defect structure to tailor nanomaterials for enhanced device performance remains an underutilized tool in materials design. We review here the state of nanomaterial design through the lens of computational prediction of defect properties for green energy technology, and synthesis methods to control defect formation for optimal performance. We illustrate the efficacy of defect-focused approaches for refining nanomaterial physics by describing several specific applications where these techniques hold potential. Most notably, we focus on quantum dots for reabsorption-free solar windows and net-zero emission buildings, oxide cathodes for high energy density lithium-ion batteries and electric vehicles, and transition metal dichalcogenides for electrocatalytic green hydrogen production and carbon-free fuels

Quantum spin Hall edge states and interlayer coupling in twisted-bilayer WTe2_2

The quantum spin Hall (QSH) effect, characterized by topologically protected spin-polarized edge states, was recently demonstrated in monolayers of the transition metal dichalcogenide (TMD) WTe$_2$. However, the robustness of this topological protection remains largely unexplored in van der Waals heterostructures containing one or more layers of a QSH insulator. In this work, we use scanning tunneling microscopy and spectroscopy (STM/STS) to explore the topological nature of twisted bilayer (tBL) WTe$_2$ which is produce from folded monolayers, as well as, tear-and-stack fabrication. At the tBL bilayer edge, we observe the characteristic spectroscopic signature of the QSH edge state that is absent in topologically trivial as-grown bilayer. For small twist angles, a rectangular moir\'e pattern develops, which results in local modifications of the band structure. Using first principles calculations, we quantify the interactions in tBL WTe$_2$ and its topological edge states as function of interlayer distance and conclude that it is possible to tune the topology of WTe$_2$ bilayers via the twist angle as well as interlayer interactions

Origin of Metal-Insulator Transitions in Correlated Perovskite Metals

The mechanisms that drive metal-to-insulator transitions (MIT) in correlated solids are not fully understood. For example, the perovskite (PV) SrCoO3 is a FM metal while the oxygen-deficient (n-doped) brownmillerite (BM) SrCoO2.5 is an anti-ferromagnetic (AFM) insulator. Given the magnetic and structural transitions that accompany the MIT, the driver for such a MIT transition is unclear. We also observe that the perovskite metals LaNiO3, SrFeO3, and SrCoO3 also undergo MIT when n-doped via high-to-low valence compositional changes. Also, pressurizing the insulating BM SrCoO2.5 phase, drives a gap closing. Using DFT and correlated diffusion Monte Carlo approaches we demonstrate that the ABO3 perovskites most prone to MIT are self hole-doped materials, reminiscent of a negative charge-transfer system. Upon n-doping away from the negative-charge transfer metallic phase, an underlying charge-lattice (or e-phonon) coupling drives the system to a bond-disproportionated gapped state, thereby achieving ligand hole passivation at certain sites only, leading to charge-disproportionated states. The size of the gap opened is correlated with the size of the hole-filling at these ligand sites. This suggests that the interactions driving the gap opening to realize a MIT even in correlated metals is the charge-transfer energy, but it couples with the underlying phonons to enable the transition to the insulating phase. Other orderings (magnetic, charge, etc.) driven by weaker interactions are secondary and may assist gap openings at small dopings, but its the charge-transfer energy that predominantly determines the bandgap, with a negative energy preferring the metallic phase. This n-doping can be achieved by modulations in stoichiometry or composition or pressure. Hence, controlling the amount of the ligand-hole is key in controlling MIT. We compare our predictions to experiments where possible

Designing Atomic Edge Structures in 2D Transition Metal Dichalcogenides for Improved Catalytic Activity

Designing new materials for functional applications depends upon our ability to understand and correlate the materials structure and chemistry to functional material properties. This is even more important for two-dimensional (2D) materials where thicknesses are on the order of a single atom to a few-atomic layers; therefore, any structural or chemical modification at these length scales can have a profound effect on modifying physical and chemical properties. 2D transition metal dichalcogenides (TMDs) such as MoS2 have emerged as a promising catalyst for the hydrogen evolution reaction with defects such as vacancies and edges being linked to high catalytic active sites as opposed to basal planes for the hydrogen evolution reaction (HER) [1]. Based on these findings it is important to develop controlled synthesis methods that will promote the formation of atomic edge structures engineered for high catalytic HER activity

Cation-eutectic transition via sublattice melting in CuInP2S6/In4/3P2S6 van der Waals layered crystals

Single crystals of the van der Waals layered ferrielectric material CuInP2S6 spontaneously phase separate when synthesized with Cu deficiency. Here we identify a route to form and tune intralayer heterostructures between the corresponding ferrielectric (CuInP2S6) and paraelectric (In4/3P2S6) phases through control of chemical phase separation. We conclusively demonstrate that Cu-deficient Cu1–xIn1+x/3P2S6 forms a single phase at high temperature. We also identify the mechanism by which the phase separation proceeds upon cooling. Above 500 K both Cu+ and In3+ become mobile, while P2S64– anions maintain their structure. We therefore propose that this transition can be understood as eutectic melting on the cation sublattice. Such a model suggests that the transition temperature for the melting process is relatively low because it requires only a partial reorganization of the crystal lattice. As a result, varying the cooling rate through the phase transition controls the lateral extent of chemical domains over several decades in size. At the fastest cooling rate, the dimensional confinement of the ferrielectric CuInP2S6 phase to nanoscale dimensions suppresses ferrielectric ordering due to the intrinsic ferroelectric size effect. Intralayer heterostructures can be formed, destroyed, and re-formed by thermal cycling, thus enabling the possibility of finely tuned ferroic structures that can potentially be optimized for specific device architectures