Trap-limited electron transport in disordered semiconducting polymers

The electron transport in diodes of poly(dialkoxy-p-phenylene vinylene) (PPV) derivatives is strongly reduced as compared to the hole transport. A recent reexamination [M. M. Mandoc , Phys. Rev. B 73, 155205 (2006)] revealed that the room-temperature electron current shows the fingerprints of trap-limited transport with a distribution of traps in energy. Here, we report on the measured temperature dependence of the electron current in these PPV derivatives. This dependence is weak and seems to be in contradiction with existing trap-limited models. We demonstrate that the presence of a Gaussian density of states (DOS) for the mobile carriers, being characteristic for disordered semiconductors, reduces the temperature dependence of the trap-limited charge transport. The reduction is governed by the width of the Gaussian DOS and originates from the equilibrium concentrations of the mobile and trapped carriers

Solitonic approach to the dimerization problem in correlated one-dimensional systems

Using exact diagonalizations we consider self-consistently the lattice distortions in odd Peierls-Hubbard and spin-Peierls periodic rings in the adiabatic harmonic approximation. From the tails of the inherent spin soliton the dimerization d_\infty of regular even rings is found by extrapolations to infinite ring lengths. Considering a wide region of electron-electron onsite interaction values U>0 compared with the band width 4t_0 at intermediately strong electron-phonon interaction g, known relationships obtained by other methods are reproduced and/or refined within one unified approach: such as the maximum of d_\infty at U \simeq 3 t_0 for g \simeq 0.5 and its shift to zero for g \to g_c \approx 0.7. The hyperbolic tangent shape of the spin soliton is retained for any U and g <~ 0.6. In the spin-Peierls limit the d_\infty are found to be in agreement with results of DMRG computations.Comment: 4 pages, 4 figures, Physical Review B, Rapid Communications, v. 56 (1997) accepte

Genuine converging solution of self-consistent field equations for extended many-electron systems

Calculations of the ground state of inhomogeneous many-electron systems involve a solving of the Poisson equation for Coulomb potential and the Schroedinger equation for single-particle orbitals. Due to nonlinearity and complexity this set of equations, one believes in the iterative method for the solution that should consist in consecutive improvement of the potential and the electron density until the self-consistency is attained. Though this approach exists for a long time there are two grave problems accompanying its implementation to infinitely extended systems. The first of them is related with the Poisson equation and lies in possible incompatibility of the boundary conditions for the potential with the electron density distribution. The analysis of this difficulty and suggested resolution are presented for both infinite conducting systems in jellium approximation and periodic solids. It provides the existence of self-consistent solution for the potential at every iteration step due to realization of a screening effect. The second problem results from the existence of continuous spectrum of Hamiltonian eigenvalues for unbounded systems. It needs to have a definition of Hilbert space basis with eigenfunctions of continuous spectrum as elements, which would be convenient in numerical applications. The definition of scalar product specifying the Hilbert space is proposed that incorporates a limiting transition. It provides self-adjointness of Hamiltonian and, respectively, the orthogonality of eigenfunctions corresponding to the different eigenvalues. In addition, it allows to normalize them effectively to delta-function and to prove in the general case the orthogonality of the 'right' and 'left' eigenfunctions belonging to twofold degenerate eigenvalues.Comment: 12 pages. Reported on Interdisciplinary Workshop "Nonequilibrium Green's Functions III", August 22 - 26, 2005, University Kiel, Germany. To be published in Journal of Physics: Conference Series, 2006; Typos in Eqs. (37), (53) and (54) are corrected. The content of the footnote is changed. Published version available free online at http://www.iop.org/EJ/abstract/1742-6596/35/1/01

A crystalline, 2D polyarylimide cathode for ultrastable and ultrafast Li storage

Organic electrode materials are of long‐standing interest for next‐generation sustainable lithium‐ion batteries (LIBs). As a promising cathode candidate, imide compounds have attracted extensive attention due to their low cost, high theoretical capacity, high working voltage, and fast redox reaction. However, the redox active site utilization of imide electrodes remains challenging for them to fulfill their potential applications. Herein, the synthesis of a highly stable, crystalline 2D polyarylimide (2D‐PAI) integrated with carbon nanotube (CNT) is demonstrated for the use as cathode material in LIBs. The synthesized polyarylimide hybrid (2D‐PAI@CNT) is featured with abundant π‐conjugated redox‐active naphthalene diimide units, a robust cyclic imide linkage, high surface area, and well‐defined accessible pores, which render the efficient utilization of redox active sites (82.9%), excellent structural stability, and fast ion diffusion. As a consequence, high rate capability and ultrastable cycle stability (100% capacity retention after 8000 cycles) are achieved in the 2D‐PAI@CNT cathode, which far exceeds the state‐of‐the‐art polyimide electrodes. This work may inspire the development of novel organic electrodes for sustainable and durable rechargeable batteries

Establishing a meaningful human rights due diligence process for corporations : learning from experience of human rights impact assessment

The United Nations Special Representative of the Secretary-General on Business and Human Rights, Professor John Ruggie, has constructed a new international framework, which is set to become the cornerstone for all action on human rights and business at the international level. The principle of human rights due diligence (HRDD) is the central component of the corporate duty to respect human rights within that framework. This article argues that Ruggie's HRDD principle contains the majority of the core procedural elements that a reasonable human rights impact assessment (HRIA) process should incorporate. It is likely that the majority of corporations will adopt HRIA as a mechanism for meeting their due diligence responsibilities. However, in the context of the contentious debate around corporate human rights performance, the current state of the art in HRIA gives rise to concerns about the credibility and robustness of likely practice. Additional requirements are therefore essential if HRDD is to have a significant impact on corporate human rights performance – requirements in relation to transparency; external participation and verification; and independent monitoring and review

The Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors

We present low temperature electrical transport experiments in five field effect transistor devices consisting of monolayer, bilayer and trilayer MoS2 films, mechanically exfoliated onto Si/SiO2 substrate. Our experiments reveal that the electronic states in all films are localized well up to the room temperature over the experimentally accessible range of gate voltage. This manifests in two dimensional (2D) variable range hopping (VRH) at high temperatures, while below \sim 30 K the conductivity displays oscillatory structures in gate voltage arising from resonant tunneling at the localized sites. From the correlation energy (T0) of VRH and gate voltage dependence of conductivity, we suggest that Coulomb potential from trapped charges in the substrate are the dominant source of disorder in MoS2 field effect devices, which leads to carrier localization as well.Comment: 10 pages, 5 figures; ACS Nano (2011

Fully sp²‐carbon‐linked crystalline two‐dimensional conjugated polymers: insight into 2D poly(phenylenecyanovinylene) formation and their optoelectronic properties

Cyano‐substituted polyphenylene vinylenes (PPVs) have been in the focus of research for several decades due to their interesting optoelectronic properties and potential applications in organic electronics. With the advent of organic two‐dimensional (2D) crystals, the question arose how the chemical and optoelectronic advantages of PPVs evolve in 2D compared to their linear counterparts. In this work, we present the efficent synthesis of two novel 2D fully sp²‐carbon‐linked crystalline PPVs and investigate the essentiality of inorganic bases for their catalytic formation. Notably, among all bases screened, cesium carbonate (Cs₂CO₃) plays a crucial role and enables reversibility in the first step with subsequent structure locking by formation of a C=C double bond to maintain crystallinity, which is supported by density functional theory (DFT) calculation. We propose a quantifiable energy diagram of a “quasi‐reversible reaction” which allows to identify further suitable C‐C bond formation reactions for 2D polymerizations. Moreover, we delineate the narrowing of the HOMO‐LUMO gap by expanding conjugation into two dimensions. To enable environmentally benign processing, we further perform the post‐modification of 2D PPVs, which renders stable dispersions in the aqueous phase

Interfacial charge transfer in nanoscale polymer transistors

Interfacial charge transfer plays an essential role in establishing the relative alignment of the metal Fermi level and the energy bands of organic semiconductors. While the details remain elusive in many systems, this charge transfer has been inferred in a number of photoemission experiments. We present electronic transport measurements in very short channel ($L < 100$ nm) transistors made from poly(3-hexylthiophene) (P3HT). As channel length is reduced, the evolution of the contact resistance and the zero-gate-voltage conductance are consistent with such charge transfer. Short channel conduction in devices with Pt contacts is greatly enhanced compared to analogous devices with Au contacts, consistent with charge transfer expectations. Alternating current scanning tunneling microscopy (ACSTM) provides further evidence that holes are transferred from Pt into P3HT, while much less charge transfer takes place at the Au/P3HT interface.Comment: 19 preprint pages, 6 figure