Fully R2R-Printed Carbon-Nanotube-Based Limitless Length of Flexible Active-Matrix for Electrophoretic Display Application

A limitless-length flexible active-matrix implies that virtually any surface can be rendered into an interactive medium when laminated with electrophoretic or organic light-emitting diode sheets. However, performance, cost, and size limitations of current fabrication technologies and semiconducting materials, typically utilized in thin film transistor (TFT) active matrices (TFT-AMs), have hindered progress, thus preventing the realization of fully printed TFT-AMs on a plastic roll. A new high-purity semiconducting single-walled carbon nanotube (s-SWCNT) ink is prepared by first isolating 99.9% pure s-SWCNTs via conjugated polymer extraction, and then utilizing a ligand-exchange method to formulate a novel hydrophilic gravure-compatible semiconducting ink. Based on the s-SWCNT ink, a fully additive manufacturing process using roll-to-roll (R2R) gravure printing enables the fabrication of a flexible TFT-AM, overcoming performance, cost, and size limitations. TFT-AMs with 10 to 40 PPI resolution where average mobility of 0.23 ± 0.12 cm2 V−1 s−1, average on–off ratio of 104.1, and threshold voltage variation of ±13% are attained. As a proof of concept, an inexpensive and flexible electrophoretic display is demonstrated by simply laminating an electrophoretic sheet onto the R2R gravure-printed s-SWCNT-based TFT-AM

Fully R2R-Printed Carbon-Nanotube-Based Limitless Length of Flexible Active-Matrix for Electrophoretic Display Application

A limitless-length flexible active-matrix implies that virtually any surface can be rendered into an interactive medium when laminated with electrophoretic or organic light-emitting diode sheets. However, performance, cost, and size limitations of current fabrication technologies and semiconducting materials, typically utilized in thin film transistor (TFT) active matrices (TFT-AMs), have hindered progress, thus preventing the realization of fully printed TFT-AMs on a plastic roll. A new high-purity semiconducting single-walled carbon nanotube (s-SWCNT) ink is prepared by first isolating 99.9% pure s-SWCNTs via conjugated polymer extraction, and then utilizing a ligand-exchange method to formulate a novel hydrophilic gravure-compatible semiconducting ink. Based on the s-SWCNT ink, a fully additive manufacturing process using roll-to-roll (R2R) gravure printing enables the fabrication of a flexible TFT-AM, overcoming performance, cost, and size limitations. TFT-AMs with 10 to 40 PPI resolution where average mobility of 0.23 ± 0.12 cm2 V−1 s−1, average on–off ratio of 104.1, and threshold voltage variation of ±13% are attained. As a proof of concept, an inexpensive and flexible electrophoretic display is demonstrated by simply laminating an electrophoretic sheet onto the R2R gravure-printed s-SWCNT-based TFT-AM

General observation of n-type field-effect behaviour in organic semiconductors

10.1038/nature03376Nature4347030194-199NATU

Co-60 gamma irradiation effects on the the capacitance and conductance characteristics of Au/PMI/n-Si Schottky diodes

TUGLUOGLU, NIHAT/0000-0001-9428-4347WOS: 000361293000006In this work, the perylene-monoimide/n-Si (100) Schottky structures have been fabricated by spin coating process. We have studied the capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics of the Au/perylene- monoimide/n-Si diodes at 500 kHz before and after Co-60 c-ray irradiation. The effects of Co-60 gamma-ray irradiation on the electrical characteristics of a perylene-monoimide/n-Si Schottky diode have been investigated. A decrease both in the capacitance and conductance has been observed after Co-60 gamma-ray irradiation. This has been attributed to a decrease in the net ionized dopant concentration that occurred as a result of Co-60 c-ray irradiation. Some contact parameters such as barrier height (Phi(B)) interface state density (N-ss) and series resistance (R-s) have been calculated from the C-V and G-V characteristics of the diode before and after irradiation. It has been observed that the UB and N-ss values are decreased after the applied radiation, while the R-s value is increased.Selcuk University BAP officeSelcuk University [11401115]This work is supported by Selcuk University BAP office with the research Project Number 11401115