SiPM Signal Processing via Multiple Linear Regression

This paper presents a novel approach using multiple linear regression to process transient signals from silicon photomultipliers. The method provides excellent noise suppression and pulse detection in scenarios with a high pulse count rate and superimposed pulses. Insights into its implementation and benchmark results are presented. We also show how this approach can be used to automatically detect the pulse shape from a given transient signal, providing good detection for count rates up to 90MHz. Experimental data are used to present an application where this algorithm improves charge spectrum resolution by an order of magnitude

Cryogenic Characterization of FBK HD Near-UV Sensitive SiPMs

We report on the characterization of near-ultraviolet high density silicon photomultiplier (\SiPM) developed at Fondazione Bruno Kessler (\FBK) at cryogenic temperature. A dedicated setup was built to measure the primary dark noise and correlated noise of the \SiPMs\ between 40 and 300~K. Moreover, an analysis program and data acquisition system were developed to allow the precise characterization of these parameters, some of which can vary up to 7 orders of magnitude between room temperature and 40~K. We demonstrate that it is possible to operate the \FBK\ near-ultraviolet high density \SiPMs\ at temperatures lower than 100~K with a dark rate below 0.01 cps/mm$^2$ and total correlated noise probability below 35\% at an over-voltage of 6~V. These results are relevant for the development of future cryogenic particle detectors using \SiPMs\ as photosensors

Compact Quantum Random Number Generator with Silicon Nanocrystals Light Emitting Device Coupled to a Silicon Photomultiplier

A small-sized photonic quantum random number generator, easy to be implemented in small electronic devices for secure data encryption and other applications, is highly demanding nowadays. Here, we propose a compact configuration with Silicon nanocrystals large area light emitting device (LED) coupled to a Silicon photomultiplier to generate random numbers. The random number generation methodology is based on the photon arrival time and is robust against the non-idealities of the detector and the source of quantum entropy. The raw data show high quality of randomness and pass all the statistical tests in national institute of standards and technology tests (NIST) suite without a post-processing algorithm. The highest bit rate is 0.5 Mbps with the efficiency of 4 bits per detected photon

Development of 3D-DDTC pixel detectors for the ATLAS upgrade

We report on the development of n-on-p, 3D Double-Side Double Type Column (3D-DDTC) pixel detectors fabricated at FBK-irst (Trento, Italy) and oriented to the ATLAS upgrade. The considered fabrication technology is simpler than that required for full 3D detectors with active edge, but the detector efficiency and radiation hardness critically depend on the columnar electrode overlap and should be carefully evaluated. The first assemblies of these sensors (featuring 2, 3, or 4 columns per pixel) with the ATLAS FEI3 read-out chip have been tested in laboratory. Selected results from the electrical and functional characterization with radioactive sources are here discussed.Comment: 20 pages, 14 figures, presented at 7th International "Hiroshima" Symposium on Development and Applications of Semiconductor Tracking Devices International Conference Center Hiroshima, Japan, Aug. 29-Sep.1, 200

Le ICT nella costruzione della Società dell'Informazione in Piemonte. Rapporto 2011

- Indice #5- Executive Summary #10- Un quadro di insieme delle dinamiche ICT nel 2010 e le sfide per un'agenda digitale del Piemotne #22- Le reti di banda larga: gli interventi regionali, l'accesso e la qualità della copertura #36- La diffusione dell'ICT nelle famiglie piemontesi #54- La diffusione di ICT nelle imprese piemontesi: storia di un cambiamento incompiuto #70- La presenza di ICT nella PA e le opportunità esistenti #88- Scuola e ICT in Piemonte #100- I costi delle ICT negli Enti locali e le aspettative in relazione ai servizi #10

Charge collection measurements with p-type Magnetic Czochralski silicon single pad detectors

Abstract The charge collected from beta source particles in single pad detectors produced on p-type Magnetic Czochralski (MCz) silicon wafers has been measured before and after irradiation with 26 MeV protons. After a 1 MeV neutron equivalent fluence of 1 × 10 15 cm - 2 the collected charge is reduced to 77% at bias voltages below 900 V. This result is compared with previous results from charge collection measurements

Charge collection and capacitance–voltage analysis in irradiated n-type magnetic Czochralski silicon detectors

Abstract The depletion depth of irradiated n-type silicon microstrip detectors can be inferred from both the reciprocal capacitance and from the amount of collected charge. Capacitance voltage ( C – V ) measurements at different frequencies and temperatures are being compared with the bias voltage dependence of the charge collection on an irradiated n-type magnetic Czochralski silicon detector. Good agreement between the reciprocal capacitance and the median collected charge is found when the frequency of the C – V measurement is selected such that it scales with the temperature dependence of the leakage current. Measuring C – V characteristics at prescribed combinations of temperature and frequency allows then a realistic estimate of the depletion characteristics of irradiated silicon strip detectors based on C – V data alone

First results of a novel Silicon Drift Detector array designed for low energy X-ray fluorescence spectroscopy

We developed a trapezoidal shaped matrix with 8 cells of Silicon Drift Detectors (SDD) featuring a very low leakage current (below 180 pA/cm2 at 20 \ub0C) and a shallow uniformly implanted p+ entrance window that enables sensitivity down to few hundreds of eV. The matrix consists of a completely depleted volume of silicon wafer subdivided into 4 square cells and 4 half-size triangular cells. The energy resolution of a single square cell, readout by the ultra-low noise SIRIO charge sensitive preamplifier, is 158 eV FWHM at 5.9 keV and 0 \ub0C. The total sensitive area of the matrix is 231 mm2 and the wafer thickness is 450\u3bcm. The detector was developed in the frame of the INFN R&D project ReDSoX in collaboration with FBK, Trento. Its trapezoidal shape was chosen in order to optimize the detection geometry for the experimental requirements of low energy X-ray fluorescence (LEXRF) spectroscopy, aiming at achieving a large detection angle. We plan to exploit the complete detector at the TwinMic spectromicroscopy beamline at the Elettra Synchrotron (Trieste, Italy). The complete system, composed of 4 matrices, increases the solid angle coverage of the isotropic photoemission hemisphere about 4 times over the present detector configuration. We report on the layout of the SDD matrix and of the experimental set-up, as well as the spectroscopic performance measured both in the laboratory and at the experimental beamline. \ua9 2015 Elsevier B.V

Development of 3D detectors at FBK-irst

We report on the development of 3D detectors at Fondazione Bruno Kessler - irst in the framework of the CERN RD-50 Collaboration. Technological and design aspects dealing with the 3D Single Type Column detectors are reviewed, and selected results from the electrical and functional characterization of prototypes are reported and discussed. A new detector concept, namely 3D Double-side Double Type Column detectors, allowing for significant performance enhancement while maintaining a reasonable process complexity, is final ly addressed

Process simulations of a fabrication technology for detector compatible front-end circuits on high-resistivity silicon

This report describes the activity carried out to characterize, by means of a process simulator, a technology (developed at ITC-irst in 1999) aimed at the production of particle detectors with integrated front-end electronics. The main part of the work has been dedicated to the calibration of the parameters involved in the simu- lation of the implantation and diffusion steps. This has been carried out comparing the calculated dopant profiles with a set of experimental data (SIMS, Spreading Resistance, Capacitance-Voltage measurements). It has been evidenced that it is extremely important to have dierent types of measurement for each layer in order to obtain an accurate calibration. In general, satisfactory results have been achived, and the simulated profiles can now be used to perform device simulations of the transistors implemented in the layout. Furthermore, a calibrated process simulator allows the definition of a new process flow with improved characteristic