Enhanced conductance near zero voltage bias in mesoscopic superconductor-semiconductor junctions

We have studied the conductance enhancement near zero voltage bias of double-barrier Nb-p++Si-E junctions, where we chose for the counterelectrode E either Nb, Al, or W. The experiments show a large correction, ΔG ≈ 0.1GN, on the classical superconductor–insulator–normal-metal (SIN) conductance. We present measurements of the temperature, magnetic-field, and voltage dependence, and we interpret the observed results within the available theoretical models for coherent Andreev reflection, as provided by several authors.

Evidence of two-electron tunneling interference in Nb/InAs junctions

The impact of junction transparency in driving phase-coherent charge transfer across diffusive semiconductor-superconductor junctions is demonstrated. We present conductivity data for a set of Nb-InAs junctions differing only in interface transparency. Our experimental findings are analyzed within the quasi-classical Green-function approach and unambiguously show the physical processes giving rise to the observed excess zero-bias conductivity.Comment: 10 pages (RevTex), 4 figures (PostScript), accepted for pubblication in Physical Review

Mesoscopic proximity effect in double barrier Superconductor/Normal Metal junctions

We report transport measurements down to T=60mK of SININ and SNIN structures in the diffusive limit. We fabricated Al-AlOx/Cu/AlOx/Cu (SININ) and Al/Cu/AlOx/Cu (SNIN) vertical junctions. For the first time, a zero bias anomaly was observed in a metallic SININ structure. We attribute this peak of conductance to coherent multi-reflections of electrons between the two tunnel barriers. This conductance maximum is quantitatively fitted by the relevant theory of mesoscopic SININ structures. When the barrier at the SN interface is removed (SNIN structure), we observe a peak of conductance at finite voltage accompagnied by an excess of sub-gap conductance.Comment: 4 pages, 4 figures, editorially approved for publication in Phys. Rev. B Rapid Com

Enhanced conductance in Superconductor Semiconductor junctions at zero voltage.

An enhancement of the zero-voltage conductance of a niobium-silicon junction is found at very low temperatures. This enhancement is a result of quantum interference of electrons, near the superconductor semiconductor interface, which results in an increase of Andreev reflection probability.