Anisotropic scattering and quantum magnetoresistivities of a periodically modulated 2D electron gas

We calculate the longitudinal conductivities of a two-dimensional noninteracting electron gas in a uniform magnetic field and a lateral electric or magnetic periodic modulation in one spatial direction, in the quantum regime. We consider the effects of the electron-impurity scattering anisotropy through the vertex corrections on the Kubo formula, which are calculated with the Bethe-Salpeter equation, in the self-consistent Born approximation. We find that due to the scattering anisotropy the band conductivity increases, and the scattering conductivities decrease and become anisotropic. Our results are in qualitative agreement with recent experiments.Comment: 19 pages, 8 figures, Revtex, to appear in Phys. Rev.

Low-field magnetoresistance in GaAs 2D holes

We report low-field magnetotransport data in two-dimensional hole systems in GaAs/AlGaAs heterostructures and quantum wells, in a large density range, $2.5 \times 10^{10} \leq p \leq 4.0 \times 10^{11}$ cm$^{-2}$, with primary focus on samples grown on (311)A GaAs substrates. At high densities, $p \gtrsim 1 \times 10^{11}$ cm$^{-2}$, we observe a remarkably strong positive magnetoresistance. It appears in samples with an anisotropic in-plane mobility and predominantly along the low-mobility direction, and is strongly dependent on the perpendicular electric field and the resulting spin-orbit interaction induced spin-subband population difference. A careful examination of the data reveals that the magnetoresistance must result from a combination of factors including the presence of two spin-subbands, a corrugated quantum well interface which leads to the mobility anisotropy, and possibly weak anti-localization. None of these factors can alone account for the observed positive magnetoresistance. We also present the evolution of the data with density: the magnitude of the positive magnetoresistance decreases with decreasing density until, at the lowest density studied ($p = 2.5 \times 10^{10}$ cm$^{-2}$), it vanishes and is replaced by a weak negative magnetoresistance.Comment: 8 pages, 8 figure

Direct band-gap crossover in epitaxial monolayer boron nitride

Hexagonal boron nitride is a large band-gap insulating material which complements the electronic and optical properties of graphene and the transition metal dichalcogenides. However, the intrinsic optical properties of monolayer boron nitride remain largely unexplored. In particular, the theoretically expected crossover to a direct-gap in the limit of the single monolayer is presently not con_rmed experimentally. Here, in contrast to the technique of exfoliating few-layer 2D hexagonal boron nitride, we exploit the scalable approach of high-temperature molecular beam epitaxy to grow high-quality monolayer boron nitride on graphite substrates. We combine deep-ultraviolet photoluminescence and reectance spectroscopy with atomic force microscopy to reveal the presence of a direct gap of energy 6.1 eV in the single atomic layers, thus con_rming a crossover to direct gap in the monolayer limit

Weak Localization and Integer Quantum Hall Effect in a Periodic Potential

We consider magnetotransport in a disordered two-dimensional electron gas in the presence of a periodic modulation in one direction. Existing quasiclassical and quantum approaches to this problem account for Weiss oscillations in the resistivity tensor at moderate magnetic fields, as well as a strong modulation-induced modification of the Shubnikov-de Haas oscillations at higher magnetic fields. They do not account, however, for the operation at even higher magnetic fields of the integer quantum Hall effect, for which quantum interference processes are responsible. We then introduce a field-theory approach, based on a nonlinear sigma model, which encompasses naturally both the quasiclassical and quantum-mechanical approaches, as well as providing a consistent means of extending them to include quantum interference corrections. A perturbative renormalization-group analysis of the field theory shows how weak localization corrections to the conductivity tensor may be described by a modification of the usual one-parameter scaling, such as to accommodate the anisotropy of the bare conductivity tensor. We also show how the two-parameter scaling, conjectured as a model for the quantum Hall effect in unmodulated systems, may be generalized similarly for the modulated system. Within this model we illustrate the operation of the quantum Hall effect in modulated systems for parameters that are realistic for current experiments.Comment: 15 pages, 4 figures, ReVTeX; revised version with condensed introduction; two figures taken out; reference adde

Adsorbate-induced curvature and stiffening of graphene

The adsorption of the alkane tetratetracontane (TTC, C44H90) on graphene induces the formation of a curved surface stabilized by a gain in adsorption energy. This effect arises from a curvature-dependent variation of a moiré pattern due to the mismatch of the carbon−carbon separation in the adsorbed molecule and the period of graphene. The effect is observed when graphene is transferred onto a deformable substrate, which in our case is the interface between water layers adsorbed on mica and an organic solvent, but is not observed on more rigid substrates such as boron nitride. Our results show that molecular adsorption can be influenced by substrate curvature, provide an example of two-dimensional molecular self-assembly on a soft, responsive interface, and demonstrate that the mechanical properties of graphene may be modified by molecular adsorption, which is of relevance to nanomechanical systems, electronics, and membrane technology

A theoretical study of spin glass dynamics

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