Spin orbit effects in a GaAs quantum dot in a parallel magnetic field

We analyze the effects of spin-orbit coupling on fluctuations of the conductance of a quantum dot fabricated in a GaAs heterostructure. We argue that spin-orbit effects may become important in the presence of a large parallel magnetic field B_{||}, even if they are negligble for B_{||}=0. This should be manifest in the level repulsion of a closed dot, and in reduced conductance fluctuations in dots with a small number of open channels in each lead, for large B_{||}. Our picture is consistent with the experimental observations of Folk et al.Comment: 5 page

Spin splitting and precession in quantum dots with spin-orbit coupling: the role of spatial deformation

Extending a previous work on spin precession in GaAs/AlGaAs quantum dots with spin-orbit coupling, we study the role of deformation in the external confinement. Small elliptical deformations are enough to alter the precessional characteristics at low magnetic fields. We obtain approximate expressions for the modified $g$ factor including weak Rashba and Dresselhaus spin-orbit terms. For more intense couplings numerical calculations are performed. We also study the influence of the magnetic field orientation on the spin splitting and the related anisotropy of the $g$ factor. Using realistic spin-orbit strengths our model calculations can reproduce the experimental spin-splittings reported by Hanson et al. (cond-mat/0303139) for a one-electron dot. For dots containing more electrons, Coulomb interaction effects are estimated within the local-spin-density approximation, showing that many features of the non-iteracting system are qualitatively preserved.Comment: 7 pages, 7 figure

Radiation-induced oscillatory magnetoresistance as a sensitive probe of the zero-field spin splitting in high mobility GaAs/AlGaAs devices

We suggest an approach for characterizing the zero-field spin splitting of high mobility two-dimensional electron systems, when beats are not readily observable in the Shubnikov-de Haas effect. The zero-field spin splitting and the effective magnetic field seen in the reference frame of the electron is evaluated from a quantitative study of beats observed in radiation-induced magnetoresistance oscillations.Comment: 4 pages, 4 color figure

Many-body spin related phenomena in ultra-low-disorder quantum wires

Zero length quantum wires (or point contacts) exhibit unexplained conductance structure close to 0.7 X 2e^2/h in the absence of an applied magnetic field. We have studied the density- and temperature-dependent conductance of ultra-low-disorder GaAs/AlGaAs quantum wires with nominal lengths l=0 and 2 mu m, fabricated from structures free of the disorder associated with modulation doping. In a direct comparison we observe structure near 0.7 X 2e^2/h for l=0 whereas the l=2 mu m wires show structure evolving with increasing electron density to 0.5 X 2e^2/h in zero magnetic field, the value expected for an ideal spin-split sub-band. Our results suggest the dominant mechanism through which electrons interact can be strongly affected by the length of the 1D region.Comment: 5 Pages, 4 figure

Growth variations and scattering mechanisms in metamorphic In0.75Ga0.25As/In-0.75 Al0.25As quantum wells grown by molecular beam epitaxy

Modulation doped metamorphic In0.75Ga0.25As/In0.75Al0.25As quantum wells (QW) were grown on GaAs substrates by molecular beam epitaxy (MBE) with step-graded buffer layers. The electron mobility of the QWs has been improved by varying the MBE growth conditions, including substrate temperature, arsenic over pressure and modulation doping level. By applying a bias voltage to SiO2 insulated gates, the electron density in the QW can be tuned from 1×1011 to 5.3×1011 cm−2. A peak mobility of 4.3×105 cm2V−1s−1 is obtained at 3.7×1011 cm−2 at 1.5 K before the onset of second subband population. To understand the evolution of mobility, transport data is fitted to a model that takes into account scattering from background impurities, modulation doping, alloy disorder and interface roughness. According to the fits, scattering from background impurities is dominant while that from alloy disorder becomes more significant at high carrier density

Interaction Effects in a One-Dimensional Constriction

We have investigated the transport properties of one-dimensional (1D) constrictions defined by split-gates in high quality GaAs/AlGaAs heterostructures. In addition to the usual quantized conductance plateaus, the equilibrium conductance shows a structure close to $0.7(2e^2/h)$, and in consolidating our previous work [K.~J. Thomas et al., Phys. Rev. Lett. 77, 135 (1996)] this 0.7 structure has been investigated in a wide range of samples as a function of temperature, carrier density, in-plane magnetic field $B_{\parallel}$ and source-drain voltage $V_{sd}$. We show that the 0.7 structure is not due to transmission or resonance effects, nor does it arise from the asymmetry of the heterojunction in the growth direction. All the 1D subbands show Zeeman splitting at high $B_{\parallel}$, and in the wide channel limit the $g$-factor is $\mid g \mid \approx 0.4$, close to that of bulk GaAs. As the channel is progressively narrowed we measure an exchange-enhanced $g$-factor. The measurements establish that the 0.7 structure is related to spin, and that electron-electron interactions become important for the last few conducting 1D subbands.Comment: 8 pages, 7 figures (accepted in Phys. Rev. B

Interference of Spin Splittings in Magneto-Oscillation Phenomena in Two-Dimensional Systems

The spin splitting caused by the terms linear in wavevector in the effective Hamiltonian containing can give rise to the new magneto-oscillation phenomena in two-dimensional systems. It is shown that the joint action of the spin-dependent contributions due to the heterostructure asymmetry and to the lack of inversion center in the bulk material suppresses beats that arise in the magneto-oscillation phenomena in the presence of the terms of only one of these types.Comment: pdf file, 4 pages, 2 figure

Conductance anomalies and the extended Anderson model for nearly perfect quantum wires

Anomalies near the conductance threshold of nearly perfect semiconductor quantum wires are explained in terms of singlet and triplet resonances of conduction electrons with a single weakly-bound electron in the wire. This is shown to be a universal effect for a wide range of situations in which the effective single-electron confinement is weak. The robustness of this generic behavior is investigated numerically for a wide range of shapes and sizes of cylindrical wires with a bulge. The dependence on gate voltage, source-drain voltage and magnetic field is discussed within the framework of an extended Hubbard model. This model is mapped onto an extended Anderson model, which in the limit of low temperatures is expected to lead to Kondo resonance physics and pronounced many-body effects

Binding Energy of Hydrogen-Like Impurities in Quantum Well Wires of InSb/GaAs in a Magnetic Field

The binding energy of a hydrogen-like impurity in a thin size-quantized wire of the InSb/GaAs semiconductors with Kane’s dispersion law in a magnetic fieldBparallel to the wire axis has been calculated as a function of the radius of the wire and magnitude ofB, using a variational approach. It is shown that when wire radius is less than the Bohr radius of the impurity, the nonparabolicity of dispersion law of charge carriers leads to a considerable increase of the binding energy in the magnetic field, as well as to a more rapid growth of binding energy with growth ofB

Ultrafast single photon emitting quantum photonic structures based on a nano-obelisk

A key issue in a single photon source is fast and efficient generation of a single photon flux with high light extraction efficiency. Significant progress toward high-efficiency single photon sources has been demonstrated by semiconductor quantum dots, especially using narrow bandgap materials. Meanwhile, there are many obstacles, which restrict the use of wide bandgap semiconductor quantum dots as practical single photon sources in ultraviolet-visible region, despite offering free space communication and miniaturized quantum information circuits. Here we demonstrate a single InGaN quantum dot embedded in an obelisk-shaped GaN nanostructure. The nano-obelisk plays an important role in eliminating dislocations, increasing light extraction, and minimizing a built-in electric field. Based on the nano-obelisks, we observed nonconventional narrow quantum dot emission and positive biexciton binding energy, which are signatures of negligible built-in field in single InGaN quantum dots. This results in efficient and ultrafast single photon generation in the violet color region