Experiments on a Slotted Wing

The results of pressure distribution measurements that were made on a model wing section of a Fieseler F 5 R type airplane are presented. Comparison of those model tests with the corresponding flight tests indicates the limitations and also the advantages of wind tunnel investigations, the advantages being particularly that through the variety of measuring methods employed the more complicated flow conditions may also be clarified. A fact brought out in these tests is that even in the case of "well rounded" slots it is possible for a vortex to be set up at the slot entrance and this vortex is responsible for certain irregularities in the pressure distribution and in the efficiency of the slot

Two-dimensional symmetrical inlets with external compression

The purpose of inlets like, for instance, those of air-cooled radiators and scoops is to take a certain air quantity out of the free stream and to partly convert the free-stream velocity into pressure. In the extreme case this pressure conversion may occur either entirely in the interior of the inlet (inlet with internal compression) or entirely in the free stream ahead of the inlet (inlet with external compression). In this report a theory for two-dimensional inlets with external compression is developed and illustrated by numerical examples. Intermediary forms between inlets with internal and external compression which can be derived from the latter are briefly discussed

IR detectors based on n-i-p-i superlattices

The principles of operation of n-i-p-i photodetectors are discussed. Special consideration is given to issues that are relevant to the performance of IR detectors such as noise, dark current, and surface effects. In addition, a novel IR detector that promises to provide information about the spectral distribution of the infrared radiation emitted from an object and, consequently, about its temperature, independent of the distance between detector and object is discussed. This detector makes use of the possibility to modulate the internal electric fields of an n-i-p-i superlattice with an applied voltage. By this technique the spectral responsivity of the detector may be controlled electrically and some information about the shape of the emission spectrum may be obtained

Current versus voltage characteristics of GaN/AlGaN/GaN double heterostructures with varying AlGaN thickness and composition under hydrostatic pressure

We have studied current versus voltage characteristics of n-GaN∕u-AlGaN∕n-GaN double heterostructure devices under hydrostatic pressure up to 500MPa. Devices were grown on c-plane sapphire substrates by organometallic vapor phase epitaxy using epitaxial layer overgrowth. The effect of AlGaN layer thickness and composition on the pressure sensitivity was investigated. For a fixed applied bias, we found that the current decreases approximately linearly in magnitude with increasing hydrostatic pressure over the range of voltages and pressures applied. The decrease in current magnitude can be attributed to piezoelectric effects and is consistent with model calculations. The polarizationcharge densities at the GaN∕AlGaN interfaces change with hydrostatic pressure, which in turn modifies the internal potential barrier. Changes in the AlGaN layer thickness and composition also modify the interfacial polarization, with thicker AlGaN layers and higher AlN content increasing the effect of pressure on the observed current versus voltage characteristics. The strain gauge factors obtained for these devices range from ∼200 to 800

Effect of hydrostatic pressure on the dc characteristics of AlGaN∕GaN heterojunction field effect transistors

We report the effect of compressive hydrostatic pressure on the current-voltage characteristics ofAlGaN∕GaNheterojunction field effect transistors (HFETs) on a sapphire substrate. The drain current increases with hydrostatic pressure and the maximum relative increase occurs when the gate bias is near threshold and drain bias is slightly larger than saturation bias. The increase of the drain current is associated with a pressure induced shift of the threshold voltage by −8.0mV∕kbar that is attributed to an increase of the polarizationcharge density at the AlGaN∕GaN interface due to the piezoelectric effect. The results demonstrate the considerable potential of AlGaN∕GaNHFETs for strain sensor applications

Capacitance of Gated GaAs/AlGaAs Heterostructures Subject to In-plane Magnetic Fields

A detailed analysis of the capacitance of gated GaAs/AlGaAs heterostructures is presented. The nonlinear dependence of the capacitance on the gate voltage and in-plane magnetic field is discussed together with the capacitance quantum steps connected with a population of higher 2D gas subbands. The results of full self-consistent numerical calculations are compared to recent experimental data.Comment: 4 pages, Revtex. 4 PostScript figures in an uuencoded compressed file available upon request. Phys. Rev.B, in pres

Cyclotron effective mass of 2D electron layer at GaAs/AlGaAs heterojunction subject to in-plane magnetic fields

We have found that Fermi contours of a two-dimensional electron gas at \rmGaAs/Al_xGa_{1-x}As interface deviate from a standard circular shape under the combined influence of an approximately triangular confining potential and the strong in-plane magnetic field. The distortion of a Fermi contour manifests itself through an increase of the electron effective cyclotron mass which has been measured by the cyclotron resonance in the far-infrared transmission spectra and by the thermal damping of Shubnikov-de Haas oscillations in tilted magnetic fields with an in-plane component up to 5 T. The observed increase of the cyclotron effective mass reaches almost 5 \% of its zero field value which is in good agreement with results of a self-consistent calculation.Comment: 4 pages, Revtex, figures can be obtained on request from [email protected]; to appear in Phys. Rev. B (in press). No changes, the corrupted submission replace