745 research outputs found
Orbital photogalvanic effects in quantum-confined structures
We report on the circular and linear photogalvanic effects caused by
free-carrier absorption of terahertz radiation in electron channels on
(001)-oriented and miscut silicon surfaces. The photocurrent behavior upon
variation of the radiation polarization state, wavelength, gate voltage and
temperature is studied. We present the microscopical and phenomenological
theory of the photogalvanic effects, which describes well the experimental
results. In particular, it is demonstrated that the circular (photon-helicity
sensitive) photocurrent in silicon-based structures is of pure orbital nature
originating from the quantum interference of different pathways contributing to
the absorption of monochromatic radiation.Comment: 8 pages, 5 figures, two culumne
Tuning of structure inversion asymmetry by the -doping position in (001)-grown GaAs quantum wells
Structure and bulk inversion asymmetry in doped (001)-grown GaAs quantum
wells is investigated by applying the magnetic field induced photogalvanic
effect. We demonstrate that the structure inversion asymmetry (SIA) can be
tailored by variation of the delta-doping layer position. Symmetrically-doped
structures exhibit a substantial SIA due to impurity segregation during the
growth process. Tuning the SIA by the delta-doping position we grow samples
with almost equal degrees of structure and bulk inversion asymmetry.Comment: 4 pages 2 figure
Chaos or Noise - Difficulties of a Distinction
In experiments, the dynamical behavior of systems is reflected in time
series. Due to the finiteness of the observational data set it is not possible
to reconstruct the invariant measure up to arbitrary fine resolution and
arbitrary high embedding dimension. These restrictions limit our ability to
distinguish between signals generated by different systems, such as regular,
chaotic or stochastic ones, when analyzed from a time series point of view. We
propose to classify the signal behavior, without referring to any specific
model, as stochastic or deterministic on a certain scale of the resolution
, according to the dependence of the -entropy,
, and of the finite size Lyapunov exponent,
, on .Comment: 24 pages RevTeX, 9 eps figures included, two references added, minor
corrections, one section has been split in two (submitted to PRE
Photoexcitation of valley-orbit currents in (111)-oriented silicon metal-oxide-semiconductor field-effect transistors
We demonstrate the injection of pure valley-orbit currents in multivalley semiconductors and present the phenomenological theory of this effect. We studied photoinduced transport in (111)-oriented silicon metaloxide-semiconductor field effect transistors at room temperature. By shining circularly polarized light on exact oriented structures with six equivalent valleys, nonzero electron fluxes within each valley are generated, which
compensate each other and do not yield a net electric current. By disturbing the balance between the valley fluxes, we demonstrate that the pure valley-orbit currents can be converted into a measurable electric current
Helicity sensitive terahertz radiation detection by dual-grating-gate high electron mobility transistors
We report on the observation of a radiation helicity sensitive photocurrent
excited by terahertz (THz) radiation in dual-grating-gate (DGG)
InAlAs/InGaAs/InAlAs/InP high electron mobility transistors (HEMT). For a
circular polarization the current measured between source and drain contacts
changes its sign with the inversion of the radiation helicity. For elliptically
polarized radiation the total current is described by superposition of the
Stokes parameters with different weights. Moreover, by variation of gate
voltages applied to individual gratings the photocurrent can be defined either
by the Stokes parameter defining the radiation helicity or those for linear
polarization. We show that artificial non-centrosymmetric microperiodic
structures with a two-dimensional electron system excited by THz radiation
exhibit a dc photocurrent caused by the combined action of a spatially periodic
in-plane potential and spatially modulated light. The results provide a proof
of principle for the application of DGG HEMT for all-electric detection of the
radiation's polarization state.Comment: 7 pages, 4 figure
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