Fast and Efficient Light Intensity Modulation in SOI with Gate-All-Around Transistor Phase Modulator

We report fast modulation (>30 GHz) in a SOI resonant cavity using integrated Bragg mirrors and a gate-all-around transistor as active element. Modulation depth >90% can be obtained in 12.5 μm long devices

Power dependence of supercontinuum noise in uniform and tapered PCFs

An error was made in the calculation of the relative intensity noise (RIN) because of an incorrectly specified value of the photodetector DC transimpedance gain

Reliable Circuit Design with Nanowire Arrays

The emergence of different fabrication techniques of silicon nanowires (SiNWs) raises the question of finding a suitable architectural organization of circuits based on them. Despite the possibility of building conventional CMOS circuits with SiNWs, the ability to arrange them into regular arrays, called crossbars, offers the opportunity to achieve higher integration densities. In such arrays, molecular switches or phase-change materials are grafted at the crosspoints, i.e., the crossing nanowires, in order to perform computation or storage. Given the fact that the technology is not mature, a hybridization of CMOS circuits with nanowire arrays seems to be the most promising approach. This chapter addresses the impact of variability on the nanowires in circuit designs based on the hybrid CMOS-SiNW crossbar approach