Compensation device of breakaway torque of reaction wheel assembly

Статья посвящена разработке устройства компенсации момента трогания в управляющихдвигателях-маховиках. В статье анализируются проблемы, связанные с возникновением явления момента трогания в двигателях. Автором предлагаются пути решения данной проблемы, а так же рассматриваются преимущества и недостатки каждого из них. В результате было предложено устройство, которое позволяет снизить момент трогания управляющих двигателей-маховиков и исключить зону нечувствительности к малым управляющим сигналам, описана его структура и представлен краткий алгоритм работы такого устройства. Оценка результатов была произведена на испытательном стенде, представляющем собой имитационную модель управляющего двигателя-маховика.The article is devoted to the development of compensation device of breakaway torque of reaction wheel assembly. The article analyses the problems associated with the emergence of phenomenon of breakaway torque in reaction wheel assembly. The author suggests ways of solving this problem, as well as discusses the advantages anddisadvantages of each of them. As a result, it was suggested the device which reduces breakaway torque of reaction wheel assembly and exclude the dead zone in range of small signals, described its structure and provides an algorithm for such a device. Evaluation of the results was carried out on a test bench, which represent a simulationmodel of reaction wheel assembly

Эффективность применения методов воздействия на призабойную зону пласта на Южно-Юганском нефтяном месторождении (ХМАО)

Объектом исследования являются применение различных методов воздействия на пласт и призабойную зону пласта, направленных на максимально эффективное и экономически рентабельное извлечение нефти и бесперебойную работу подземного оборудования. Целью данной выпускной квалификационной работы является Анализ применения методов воздействия на призабойную зону пласта с целью увеличения продуктивности скважин.The object of research is the application of various methods of influence on the reservoir and the bottomhole formation zone, to the most efficient and economically viable oil recovery and ninterrupted operation of underground equipment. The purpose of this final qualifying work is to Analyze the application of the methods of influence on the bottomhole formation zone with the aim of increasing the productivity of wells

Dynamical phenomena in Fibonacci Semiconductor Superlattices

We present a detailed study of the dynamics of electronic wavepackets in Fibonacci semiconductor superlattices, both in flat band conditions and subject to homogeneous electric fields perpendicular to the layers. Coherent propagation of electrons is described by means of a scalar Hamiltonian using the effective-mass approximation. We have found that an initial Gaussian wavepacket is filtered selectively when passing through the superlattice. This means that only those components of the wavepacket whose wavenumber belong to allowed subminibands of the fractal-like energy spectrum can propagate over the entire superlattice. The Fourier pattern of the transmitted part of the wavepacket presents clear evidences of fractality reproducing those of the underlying energy spectrum. This phenomenon persists even in the presence of unintentional disorder due to growth imperfections. Finally, we have demonstrated that periodic coherent-field induced oscillations (Bloch oscillations), which we are able to observe in our simulations of periodic superlattices, are replaced in Fibonacci superlattices by more complex oscillations displaying quasiperiodic signatures, thus sheding more light onto the very peculiar nature of the electronic states in these systems.Comment: 7 pagex, RevTex, 5 Postscript figures. Physical Review B (in press

Coherent dynamics of interwell excitons in GaAs/AlxGa1-xAs superlattices

Coherent exciton dynamics in a GaAs/AlxGa1−xAs narrow-miniband superlattice is studied by spectrally resolved transient four-wave mixing. Coherent optical properties of the investigated structure are found to be strongly affected by the existence of two different heavy-hole excitonic states. One of them, the 1s heavy-hole exciton, is almost identical to the same state in noninteracting quantum wells, while the other, the heavy-hole interwell exciton, is composed of an electron and a heavy hole in adjacent wells. The interwell exciton leads to a resonant enhancement in the four-wave mixing spectra and exhibits quantum beats with the 1s heavy-hole exciton. The dephasing of the interwell exciton is one order of magnitude faster than that of the heavy-hole exciton and is mostly due to intensity-independent scattering mechanisms

Microscopic theory of the intracollisional field effect in semiconductor superlattices

A detailed analysis of the optical and transport properties of semiconductor superlattices in the high-field regime is presented. Electronic Bloch oscillations and the resulting terahertz emission signals are computed including phonon damping in the presence of the electric field. The modifications of the phonon-induced terahertz signal decay are analyzed including the movement of the carriers in the field (intracollisional field effect). For elevated fields it is shown that the interplay between electric field and electron-phonon interaction leads to resonance structures in the terahertz damping rate

Coherent Optical polarization of Bulk GaAs Studied by Femtosecond Photon-Echo Spectroscopy

The nonlinear polarization close to the band gap of GaAs is studied by spectrally and temporally resolved four-wave mixing. Excitonic and free carrier contributions both excited within the bandwidth of the 100 fs pulses are distinguished for the first time. The excitonic part dominates at carrier densities below 1016 cm-3. At higher density, nonthermalized free carriers give rise to an additional component resonant to the pulse that shows a photon-echo-like time behavior. Monte Carlo simulations including the coherent polarization and the scattering dynamics of the carriers account for the data

Excitonic and free-carrier polarizations of bulk GaAs studied by femtosecond coherent spectroscopy

The transient third-order polarization at the band gap of undoped and p-doped GaAs is investigated by spectrally and temporally resolved four-wave mixing. Excitonic and free-carrier contributions simultaneously excited within the bandwidth of the 100-fs pulses are clearly distinguished by their different spectral envelopes. The excitonic part dominates at carrier densities below 1016 cm-3 and shows a time evolution governed by exciton-free-carrier scattering and by many-body effects. At higher density, the free-carrier polarization has a strength similar to the exciton contribution and exhibits a spectrum resonant to the femtosecond pulses with a photon-echo-like temporal behavior. The data are analyzed by a numerical solution of the semiconductor Bloch equations including an ensemble Monte Carlo simulation of the scattering dynamics of the carriers. The theoretical model is in good agreement with the experimental results

Two-color picosecond and continuous-wave experiments on anti-Stokes and Stokes carrier-transfer phenomena in GaAslAl(x)Ga(1-x)As and InGaP2/AlxGa1-xAs heterostructures

We present direct evidence of the two-step absorption process in anti-Stokes photoluminescence in both GaAs/AlxGa1-xAs and InGaP2/AlxGa1-xAs heterostructures using two-color picosecond and continuous-wave photoluminescence experiments. We show information about the lifetime of the defect states that participate in the two-step absorption process. As a result, we conclude that the long-lived states rather than excitons play the dominant role in the two-step absorption process. We also study the possible contribution of the two-step absorption process to Stokes carrier transfer in GaAs/AlxGa1-xAs asymmetric double quantum well structuresclos