Spin gating electrical current

We use an aluminium single electron transistor with a magnetic gate to directly quantify the chemical potential anisotropy of GaMnAs materials. Uniaxial and cubic contributions to the chemical potential anisotropy are determined from field rotation experiments. In performing magnetic field sweeps we observe additional isotropic magnetic field dependence of the chemical potential which shows a non-monotonic behavior. The observed effects are explained by calculations based on the $\mathbf{k}\cdot\mathbf{p}$ kinetic exchange model of ferromagnetism in GaMnAs. Our device inverts the conventional approach for constructing spin transistors: instead of spin-transport controlled by ordinary gates we spin-gate ordinary charge transport.Comment: 5 pages, 4 figure

Anomalous Hall effect and weak localization corrections in a ferromagnet

In this paper, we report results on the anomalous Hall effect. First, we summarize analytical calculations based on the Kubo formalism : explicit expressions for both skew-scattering and side-jump are derived and weak-localization corrections are discussed. Next, we present numerical calculations of the anomalous Hall resistivity based on the Dirac equation. Qualitative agreement with experiments is obtained.Comment: Proceeding JEMS'0

Spin Hall effect transistor

Spin transistors and spin Hall effects have been two separate leading directions of research in semiconductor spintronics which seeks new paradigms for information processing technologies. We have brought the two directions together to realize an all-semiconductor spin Hall effect transistor. Our scheme circumvents semiconductor-ferromagnet interface problems of the original Datta-Das spin transistor concept and demonstrates the utility of the spin Hall effects in microelectronics. The devices use diffusive transport and operate without electrical current, i.e., without Joule heating in the active part of the transistor. We demonstrate a spin AND logic function in a semiconductor channel with two gates. Our experimental study is complemented by numerical Monte Carlo simulations of spin-diffusion through the transistor channel.Comment: 11 pages, 3 figure

Spin-dependent phenomena and device concepts explored in (Ga,Mn)As

Over the past two decades, the research of (Ga,Mn)As has led to a deeper understanding of relativistic spin-dependent phenomena in magnetic systems. It has also led to discoveries of new effects and demonstrations of unprecedented functionalities of experimental spintronic devices with general applicability to a wide range of materials. In this article we review the basic material properties that make (Ga,Mn)As a favorable test-bed system for spintronics research and discuss contributions of (Ga,Mn)As studies in the general context of the spin-dependent phenomena and device concepts. Special focus is on the spin-orbit coupling induced effects and the reviewed topics include the interaction of spin with electrical current, light, and heat.Comment: 47 pages, 41 figure

Reconfigurable Boolean Logic using Magnetic Single-Electron Transistors

We propose a novel hybrid single-electron device for reprogrammable low-power logic operations, the magnetic single-electron transistor (MSET). The device consists of an aluminium single-electron transistors with a GaMnAs magnetic back-gate. Changing between different logic gate functions is realized by reorienting the magnetic moments of the magnetic layer which induce a voltage shift on the Coulomb blockade oscillations of the MSET. We show that we can arbitrarily reprogram the function of the device from an n-type SET for in-plane magnetization of the GaMnAs layer to p-type SET for out-of-plane magnetization orientation. Moreover, we demonstrate a set of reprogrammable Boolean gates and its logical complement at the single device level. Finally, we propose two sets of reconfigurable binary gates using combinations of two MSETs in a pull-down network

Detectability of atmospheric features of Earth-like planets in the habitable zone around M dwarfs

We investigate the detectability of atmospheric spectral features of Earth-like planets in the habitable zone (HZ) around M dwarfs with the future James Webb Space Telescope (JWST). We use a coupled 1D climate-chemistry-model to simulate the influence of a range of observed and modelled M-dwarf spectra on Earth-like planets. The simulated atmospheres served as input for the calculation of the transmission spectra of the hypothetical planets, using a line-by-line spectral radiative transfer model. To investigate the spectroscopic detectability of absorption bands with JWST we further developed a signal-to-noise ratio (S/N) model and applied it to our transmission spectra. High abundances of CH$_4$ and H$_2$O in the atmosphere of Earth-like planets around mid to late M dwarfs increase the detectability of the corresponding spectral features compared to early M-dwarf planets. Increased temperatures in the middle atmosphere of mid- to late-type M-dwarf planets expand the atmosphere and further increase the detectability of absorption bands. To detect CH$_4$, H$_2$O, and CO$_2$ in the atmosphere of an Earth-like planet around a mid to late M dwarf observing only one transit with JWST could be enough up to a distance of 4 pc and less than ten transits up to a distance of 10 pc. As a consequence of saturation limits of JWST and less pronounced absorption bands, the detection of spectral features of hypothetical Earth-like planets around most early M dwarfs would require more than ten transits. We identify 276 existing M dwarfs (including GJ 1132, TRAPPIST-1, GJ 1214, and LHS 1140) around which atmospheric absorption features of hypothetical Earth-like planets could be detected by co-adding just a few transits. We show that using transmission spectroscopy, JWST could provide enough precision to be able to partly characterise the atmosphere of Earth-like TESS planets around mid to late M dwarfs.Comment: 18 pages, 10 figure

Franck-Condon Physics in A Single Trapped Ion

We propose how to explore the Franck-Condon (FC) physics via a single ion confined in a spin-dependent potential, formed by the combination of a Paul trap and a magnetic field gradient. The correlation between electronic and vibrational degrees of freedom, called as electron-vibron coupling, is induced by a nonzero gradient. For a sufficiently strong electron-vibron coupling, the FC blockade of low-lying vibronic transitions takes place. We analyze the feasibility of observing the FC physics in a single trapped ion, and demonstrate various potential applications of the ionic FC physics in quantum state engineering and quantum information processing.Comment: 7 pages, 5 figure

Tunneling anisotropic magnetoresistance in multilayer-(Co/Pt)/AlOx/Pt structures

We report observations of tunneling anisotropic magnetoresitance (TAMR) in vertical tunnel devices with a ferromagnetic multilayer-(Co/Pt) electrode and a non-magnetic Pt counter-electrode separated by an AlOx barrier. In stacks with the ferromagnetic electrode terminated by a Co film the TAMR magnitude saturates at 0.15% beyond which it shows only weak dependence on the magnetic field strength, bias voltage, and temperature. For ferromagnetic electrodes terminated by two monolayers of Pt we observe order(s) of magnitude enhancement of the TAMR and a strong dependence on field, temperature and bias. Discussion of experiments is based on relativistic ab initio calculations of magnetization orientation dependent densities of states of Co and Co/Pt model systems.Comment: 4 pages, 5 figures, to be published in Phys. Rev. Let