Shape resonances in the superconducting order parameter of ultrathin nanowires

We study the shape resonance effect associated with the confined transverse superconducting modes of a cylindrical nanowire in the clean limit. Results of numerical investigations of the Bogoliubov-de Gennes equations show significant deviations of the energy gap parameter from its bulk value with a profound effect on the transition temperature. The most striking is that the size of the resonances is found to be by about order of magnitude larger than in ultrathin metallic films with the same width.Comment: 4 pages, 2 figure

Atypical BCS-BEC crossover induced by quantum-size effects

Quantum-size oscillations of the basic physical characteristics of a confined fermionic condensate are a well-known phenomenon. Its conventional understanding is based on the single-particle physics, whereby the oscillations follow the size-dependent changes in the single-particle density of states. Here we present a study of a cigar-shaped ultracold superfluid Fermi gas, which demonstrates an important many-body aspect of the quantum-size effects, overlooked previously. The many-body physics is revealed in the atypical crossover from the Bardeen-Cooper-Schrieffer (BCS) superfluid to the Bose-Einstein condensate (BEC) induced by the size quantization of the particle motion. Quantized perpendicular spectrum results in the formation of single-particle subbands (shells) so that the aggregate fermionic condensate becomes a coherent mixture of subband condensates. Each time when the lower edge of a subband crosses the chemical potential, the BCS-BEC crossover is approached in this subband, and the aggregate condensate contains both the BCS and BEC-like components.Comment: 7 pages, 5 figure

Investigation of irradiated monolithic transistors for space applications

In this paper experimental results on radiation effects on a BICMOS high speed commercial technology, manufactured by STMicroelectronics, are reported. Bipolar transistors were irradiated by neutrons, ions, or by both of them. Fast neutrons, as well as other types of particles, produce defects, mainly by displacing silicon atoms from their lattice positions to interstitial locations, i.e. generating vacancy-interstitial pairs, the so-called Frenkel pairs (FP). Defects introduce trapping energy states which degrade the common emitter current gain β. The gain degradation has been investigated for collector current Ic between 1 μA and 1 mA. It was found a linear dependence of Δ(1/β)=1/βi−1/β (where βi and β are the gain after and before the irradiation) as a function of the concentration of FP. The bipolar transistors made on this technology have shown to be particularly radiation resistant. Both base and collector currents have been also systematically investigated

Study of radiation effects on bipolar transistors

Abstract In this paper it was shown that the irradiation with neutrons and carbon ions leads to gain degradation in bipolar transistors due to generation of defects. The density of these generated defects is independent of the type of irradiation (neutrons or carbon ions). Thus, it is possible to evaluate Δ(1/β), once the expected Frenkel pair density is known. The dependence of the damage constant on collector current is a power law function, with the exception of the lateral pnp transistors, that shows a higher sensitivity to radiation and a different behaviour. Neutrons give a smaller density of Frenkel pairs (CF) than the two sorts of carbon ions of high energy (CHE) and medium energy (CME). It was found that CME causes a higher concentration of CF. The calculated ratio R=CF/Φ, where CF is the Frenkel pair density and Φ fluence does not depend on Φ, for a given type of radiation. However, it depends on the incoming particle type. Its smallest calculated value was obtained for neutrons (R=6.1×10), which increases to 1.25×103 for CHE and to 1.1×104 for CME