Black Silicon with high density and high aspect ratio nanowhiskers

Physical properties of black Silicon (b-Si) formed on Si wafers by reactive ion etching in chlorine plasma are reported in an attempt to clarify the formation mechanism and the origin of the observed optical and electrical phenomena which are promising for a variety of applications. The b-Si consisting of high density and high aspect ratio sub-micron length whiskers or pillars with tip diameters of well under 3 nm exhibits strong photoluminescence (PL) both in visible and infrared, which are interpreted in conjunction with defects, confinement effects and near band-edge emission. Structural analysis indicate that the whiskers are all crystalline and encapsulated by a thin Si oxide layer. Infrared vibrational spectrum of Si-O-Si bondings in terms of transverse-optic (TO) and longitudinal-optic (LO) phonons indicates that disorder induced LO-TO optical mode coupling can be an effective tool in assessing structural quality of the b-Si. The same phonons are likely coupled to electrons in visible region PL transitions. Field emission properties of these nanoscopic features are demonstrated indicating the influence of the tip shape on the emission. Overall properties are discussed in terms of surface morphology of the nano whiskers

The Nordic Arthroplasty Register Association: A unique collaboration between 3 national hip arthroplasty registries with 280,201 THRs

Background and purpose The possibility of comparing results and of pooling the data has been limited for the Nordic arthroplasty registries, because of different registration systems and questionnaires. We have established a common Nordic database, in order to compare demographics and the results of total hip replacement surgery between countries. In addition, we plan to study results in patient groups in which the numbers are too small to be studied in the individual countries

Increasing risk of revision due to deep infection after hip arthroplasty: A study on 97,344 primary total hip replacements in the Norwegian Arthroplasty Register from 1987 to 2007

Background and purpose Over the decades, improvements in surgery and perioperative routines have reduced the incidence of deep infections after total hip arthroplasty (THA). There is, however, some evidence to suggest that the incidence of infection is increasing again. We assessed the risk of revision due to deep infection for primary THAs reported to the Norwegian Arthroplasty Register (NAR) over the period 1987–2007

Infection after primary hip arthroplasty: A comparison of 3 Norwegian health registers

Background and purpose: The aim of the present study was to assess incidence of and risk factors for infection after hip arthroplasty in data from 3 national health registries. We investigated differences in risk patterns between surgical site infection (SSI) and revision due to infection after primary total hip arthroplasty (THA) and hemiarthroplasty (HA). Materials and methods: This observational study was based on prospective data from 2005–2009 on primary THAs and HAs from the Norwegian Arthroplasty Register (NAR), the Norwegian Hip Fracture Register (NHFR), and the Norwegian Surveillance System for Healthcare–Associated Infections (NOIS). The Norwegian Patient Register (NPR) was used for evaluation of case reporting. Cox regression analyses were performed with revision due to infection as endpoint for data from the NAR and the NHFR, and with SSI as the endpoint for data from the NOIS. Results: The 1–year incidence of SSI in the NOIS was 3.0% after THA (167/5,540) and 7.3% after HA (103/1,416). The 1–year incidence of revision due to infection was 0.7% for THAs in the NAR (182/24,512) and 1.5% for HAs in the NHFR (128/8,262). Risk factors for SSI after THA were advanced age, ASA class higher than 2, and short duration of surgery. For THA, the risk factors for revision due to infection were male sex, advanced age, ASA class higher than 1, emergency surgery, uncemented fixation, and a National Nosocomial Infection Surveillance (NNIS) risk index of 2 or more. For HAs inserted after fracture, age less than 60 and short duration of surgery were risk factors of revision due to infection. Interpretation: The incidences of SSI and revision due to infection after primary hip replacements in Norway are similar to those in other countries. There may be differences in risk pattern between SSI and revision due to infection after arthroplasty. The risk patterns for revision due to infection appear to be different for HA and THA

Ellipsometry studies of Si/Ge superlattices with embedded Ge dots

In this paper, we present an analysis for treating the spectroscopic ellipsometry response of Si/Ge superlattices (SLs) with embedded Ge dots. Spectroscopic ellipsometry (SE) measurement at room temperature was used to investigate optical and electronic properties of Si/Ge SLs which were grown on silicon (Si) wafers having aOE (c) 111 > crystallographic orientation. The results of the SE analysis between 200 nm and 1000 nm indicate that the SL system can effectively be described using an interdiffusion/intermixing model by assuming multicrystalline Si and Si1-x Ge (x) intermixing layers. The electronic transitions deduced from the analysis reveal Si-, Ge- and alloying-related critical energy points

Optical response of Si/Ge superlattices with embedded Ge dots

A method was provided for treating the optical response of Si/Ge superlattices (SL) with embedded Ge dots. Spectroscopic ellipsometry (SE) measurement at room temperature was used to investigate optical and electronic properties of Si/Ge SL which were grown on silicon (Si) wafers having ; crystallographic orientation. The results of the SE analysis between 1.2 eV and 5.2 eV indicate that the SL system can effectively be described using interdiffusion/intermixing model by assuming a multicrystalline Si and Si1-xGex intermixing layers. The optical transitions exhibit Si, Ge and alloying related critical points

Photoluminescence from silicon nanoparticles embedded in ammonium silicon hexafluoride

Silicon (Si) nanoparticles (NPs) were synthesized by transforming a Si wafer surface to ammonium silicon hexafluoride (ASH) or (NH4)(2)SiF6 under acid vapor treatment. Si-NPs which were found to be embedded within the polycrystalline (ASH) layer exhibit a strong green-orange photoluminescence (PL). Differential PL measurements revealed a major double component spectrum consisting of a broad band associated with the ASH-Si wafer interfacial porous oxide layer and a high energy band attributable to Si-NPs embedded in the ASH. The origin of the latter emission can be explained in terms of quantum/spatial confinement effects probably mediated by oxygen related defects in or around Si-NPs. Although Si-NPs are derived from the interface they are much smaller in size than those embedded within the interfacial porous oxide layer (SiOx, x > 1.5). Transmission electron microscopy (TEM) combined with Raman scattering and Fourier transformed infrared (FTIR) analysis confirmed the presence of Si-NP and Si-O bondings pointing to the role of oxygen related defects in a porous/amorphous structure. The presence of oxygen of up to 4.5 at.% in the (NH4)(2)SiF6 layer was confirmed by energy dispersive spectroscopy (EDS) analysis