Computer program for analysis of flow across a gas turbine seal

Computer program analyzes the flow /leakage/ across a sealing dam for the case of steady, laminar, subsonic, isothermal, compressible flow. The analysis considers both parallel sealing-dam surfaces and surfaces with small tilt angles

Compressible flow computer program for gas film seals

Computer program, AREAX, calculates properties of compressible fluid flow with friction and area change. Program carries out quasi-one-dimensional flow analysis which is valid for laminar and turbulent flows under both subsonic and choked flow conditions. Program was written to be applied to gas film seals

High speed, self-acting, face-contact shaft seal has low leakage and very low wear

Design adds gas thrust bearing to face of conventional face seal. Bearing lifts seal's carbon face out of contact after startup and establishes thin gas film between sealing surfaces. Operating pressure and speed capabilities are greater than those of conventional face seals

On a conjecture of Atiyah

In this note we explain how the computation of the spectrum of the lamplighter group from \cite{Grigorchuk-Zuk(2000)} yields a counterexample to a strong version of the Atiyah conjectures about the range of $L^2$-Betti numbers of closed manifolds.Comment: 8 pages, A4 pape

Design study of shaft face seal with self-acting lift augmentation. 4: Force balance

A method for predicting the operating film thickness of self-acting seals is described. The analysis considers a 16.76-cm mean diameter seal that is typical of large gas turbines for aircraft. Four design points were selected to cover a wide range of operation for advanced engines. This operating range covered sliding speeds of 61 to 153 m/sec, sealed pressures of 45 to 217 N/sq cm abs, and gas temperatures of 311 to 977 K. The force balance analysis revealed that the seal operated without contact over the operating range with gas film thicknesses ranging between 0.00046 to 0.00119 cm, and with gas leakage rates between 0.01 to 0.39 scmm

Exploring the Overlap Between Dyslexia and Speech Sound Production Deficits

Purpose Children with dyslexia have speech production deficits in a variety of spoken language contexts. In this article, we discuss the nature of speech production errors in children with dyslexia, including those who have a history of speech sound disorder and those who do not, to familiarize speech-language pathologists with speech production-specific risk factors that may help predict or identify dyslexia in young children. Method In this tutorial, we discuss the role of a phonological deficit in children with dyslexia and how this may manifest as speech production errors, sometimes in conjunction with a speech sound disorder but sometimes not. We also briefly review other factors outside the realm of phonology that may alert the speech-language pathologist to possible dyslexia. Results Speech-language pathologists possess unique knowledge that directly contributes to the identification and remediation of children with dyslexia. We present several clinical recommendations related to speech production deficits in children with dyslexia. We also review what is known about how and when children with speech sound disorder are most at risk for dyslexia. Conclusion Speech-language pathologists have a unique opportunity to assist in the identification of young children who are at risk for dyslexia

Implantation temperature effects on the nanoscale optical pattern fabrication in a-SiC:H films by Ga+ focused ion beams

ArticleProceedings of the IX International Conference on Ion Implantation and Other Applications of Ions and Electrons ION 2012, Kazimierz Dolny, Poland, June 25-28, 2012This work is related to a novel approach of providing some new generation ultrastable (> 50 years), ultrahigh density (> 1 Tbit/sq.in.) data storage for archival applications. We used ion-implantation to write nanoscale data into hydrogenated amorphous silicon carbide (a-SiC:H) films. Wide bandgap a-SiC:H samples, Ga+ focused ion beam implanted, have been prepared. A range of samples has been focused ion beam patterned under different implantation conditions, with emphasis on different substrate temperatures (typically from 0°C temperature to around room temperature). Some of the room temperature implanted samples were further annealed at + 250°C in vacuum. The focused ion beam patterned samples were then analysed using near-field techniques, like atomic force microscopy, to define optimum implantation conditions and the resulting consequences for archival data storage applications. The atomic force microscopy analysis of Ga+ focused ion beam implanted a-Si1 - xCx:H samples at room temperature and at 0°C revealed an increase of both the depth and the width of the individual lines within the focused ion beam written patterns at the lower temperature, as a result of an increased ion beam induced sputtering yield, in good agreement with the previous results for the case of Ga+ broad beam implantation in a-Si1-xCx:H and again suggesting that the best conditions for optical data storage for archival storage applications would be using Ga+ ion implantation in a-SiC:H films with an optimal dose at room temperatures. Similarly, the atomic force microscopy results confirm that no advantage is expected to result from post-implantation annealing treatments.This work has been supported by the European Community as an Integrating Activity “Support of Public and Industrial Research using Ion Beam Technology (SPIRIT)” under EC contract No. 227012. The support of EC funded project BG051PO001/3.3.-05.001 for this publication is gratefully acknowledged. The Marie Curie Fellowship for T. Tsvetkova was also supported by the European Community under the contract PIEF-GA-2009-251845. The help of D. Dimova-Malinovska and O. Angelov with the samples preparation and useful discussions is also gratefully acknowledged

Application of the Worldline Path Integral Method to the Calculation of Inverse Mass Expansions

Higher order coefficients of the inverse mass expansion of one-loop effective actions are obtained from a one-dimensional path integral representation. For the case of a massive scalar loop in the background of both a scalar potential and a (non Abelian) gauge field explicit results to $O(T^5)$ in the proper time parameter are presented.Comment: 6 pages, LaTeX. Talk given at 5th International Workshop on Software Engineering and Artificial Intelligence for High Energy and Nuclear Physics (AIHENP96), Lausanne (Switzerland), 2-6 September 199

Flow Equations for U_k and Z_k

By considering the gradient expansion for the wilsonian effective action S_k of a single component scalar field theory truncated to the first two terms, the potential U_k and the kinetic term Z_k, I show that the recent claim that different expansion of the fluctuation determinant give rise to different renormalization group equations for Z_k is incorrect. The correct procedure to derive this equation is presented and the set of coupled differential equations for U_k and Z_k is definitely established.Comment: 5 page