Electrical Characterization of Submicrometer Silicon Devices by Cross-Sectional Contact Mode Atomic Force Microscopy

Two contact mode atomic force microscopic (AFM) techniques under ambient conditions are presented for the electrical evaluation of cross sectioned silicon devices. In the first technique, a conductive AFM tip is used as a voltage probe to determine the local potential distribution on the cross section of a silicon device under operation. The electrical potential is measured simultaneously with the surface topography with nanometer resolution and mV accuracy, offering an easy way of correlating topographic and electrical features. A second method, nanometer spreading resistance profiling (nano-SRP), performs localized spreading resistance measurements to determine the spatial distribution of charge carriers in silicon structures. The conversion of the resistance profiles into charge carrier profiles as well as the applied correction factors are discussed in more detail. Both methods are used to map electrical characteristics of state-of-the-art silicon structures

Thickness dependence of the resistivity of Platinum group metal thin films

We report on the thin film resistivity of several platinum-group metals (Ru, Pd, Ir, Pt). Platinum-group thin films show comparable or lower resistivities than Cu for film thicknesses below about 5\,nm due to a weaker thickness dependence of the resistivity. Based on experimentally determined mean linear distances between grain boundaries as well as ab initio calculations of the electron mean free path, the data for Ru, Ir, and Cu were modeled within the semiclassical Mayadas--Shatzkes model [Phys. Rev. B 1, 1382 (1970)] to assess the combined contributions of surface and grain boundary scattering to the resistivity. For Ru, the modeling results indicated that surface scattering was strongly dependent on the surrounding material with nearly specular scattering at interfaces with SiO2 or air but with diffuse scattering at interfaces with TaN. The dependence of the thin film resistivity on the mean free path is also discussed within the Mayadas--Shatzkes model in consideration of the experimental findings.Comment: 28 pages, 9 figure

Non-filamentary (VMCO) memory : a two- and three-dimensional study on switching and failure modes

In this work, for the first time, a set of two-and three-dimensional (3D) analysis techniques are combined to clarify the nature of resistive switching (RS) in state-of-the-art TiO2-based vacancy modulated conductive oxide (VMCO) memory. (1) A non-filamentary switching mechanism is observed. (2) The role of oxygen incorporation and motion in the TiO2 is demonstrated. (3) The oxygen profile inside scaled cells is measured and a RS-model based on the modulation of oxygen inside the stack is proposed. In addition, we perform the tomographic analysis of fully-fabricated devices with Scalpel SPM, thus probing in 3D the entire stack and the contribution of TiO2 grain boundaries (GBs) to the switching operations. Finally, devices failed by breakdown (BD) during cycling are characterized, identifying the formation of parasitic filaments as root-cause of the failure

Implantation and Activation of Phosphorus in Amorphous and Crystalline Germanium Layers

We have investigated phosphorus implantation and activation in amorphous and crystalline Ge layers, deposited on Si substrates. The structure of the Ge layer has only limited influence on the dopant profile and diffusion after annealing. Surprisingly, crystalline Ge layers show better electrical results after implantation and dopant activation. For the amorphous layer, the solid phase epitaxy process is influenced in the neighborhood of P, leading to point defects, which inhibit electrical activation. This result implies that when a crystalline Ge layer is amorphized during implantation of high doses, the dopant activation can be significantly reduced. Reduced temperature ramping improves activation of P in amorphous Ge layers

A functional variant in the Stearoyl-CoA desaturase gene promoter enhances fatty acid desaturation in pork

There is growing public concern about reducing saturated fat intake. Stearoyl-CoA desaturase (SCD) is the lipogenic enzyme responsible for the biosynthesis of oleic acid (18:1) by desaturating stearic acid (18:0). Here we describe a total of 18 mutations in the promoter and 3′ non-coding region of the pig SCD gene and provide evidence that allele T at AY487830:g.2228T>C in the promoter region enhances fat desaturation (the ratio 18:1/18:0 in muscle increases from 3.78 to 4.43 in opposite homozygotes) without affecting fat content (18:0+18:1, intramuscular fat content, and backfat thickness). No mutations that could affect the functionality of the protein were found in the coding region. First, we proved in a purebred Duroc line that the C-T-A haplotype of the 3 single nucleotide polymorphisms (SNPs) (g.2108C>T; g.2228T>C; g.2281A>G) of the promoter region was additively associated to enhanced 18:1/18:0 both in muscle and subcutaneous fat, but not in liver. We show that this association was consistent over a 10-year period of overlapping generations and, in line with these results, that the C-T-A haplotype displayed greater SCD mRNA expression in muscle. The effect of this haplotype was validated both internally, by comparing opposite homozygote siblings, and externally, by using experimental Duroc-based crossbreds. Second, the g.2281A>G and the g.2108C>T SNPs were excluded as causative mutations using new and previously published data, restricting the causality to g.2228T>C SNP, the last source of genetic variation within the haplotype. This mutation is positioned in the core sequence of several putative transcription factor binding sites, so that there are several plausible mechanisms by which allele T enhances 18:1/18:0 and, consequently, the proportion of monounsaturated to saturated fat.This research was supported by grants from the Spanish Ministry of Science and Innovation (AGL2009-09779 and AGL2012-33529). RRF is recipient of a PhD scholarship from the Spanish Ministry of Science and Innovation (BES-2010-034607). The funders had no role in study design, data collection and analysis, decision to publish, or preparation of manuscript