3,813 research outputs found
The Contribution of Hot Electron Spin Polarization to the Magnetotransport in a Spin-Valve Transistor at Finite Temperatures
The effect of spin mixing due to thermal spin waves and temperature
dependence of hot electron spin polarization to the collector current in a
spin-valve transistor has been theoretically explored. We calculate the
collector current as well as the temperature dependence of magnetocurrent at
finite temperatures to investigate the relative importance of spin mixing and
hot electron spin polarization. In this study the inelastic scattering events
in ferromagnetic layers have been taken into account to explore our interests.
The theoretical calculations suggest that the temperature dependence of hot
electron spin polarization has substantial contribution to the magnetotransport
in the spin-valve transistor.Comment: 8 pages and 6 figure
An optimised algorithm for ionized impurity scattering in Monte Carlo simulations
We present a new optimised model of Brookes-Herring ionized impurity
scattering for use in Monte Carlo simulations of semiconductors. When
implemented, it greatly decreases the execution time needed for simulations
(typically by a factor of the order of 100), and also properly incorporates the
great proportion of small angle scatterings that are neglected in the standard
algorithm. It achieves this performance by using an anisotropic choice of
scattering angle which accurately mimics the true angular distribution of
ionized impurity scattering.Comment: 5 page
Joint Algorithm-Architecture Optimization of CABAC
This paper uses joint algorithm and architecture design to enable high coding efficiency in conjunction with high processing speed and low area cost. Specifically, it presents several optimizations that can be performed on Context Adaptive Binary Arithmetic Coding (CABAC), a form of entropy coding used in H.264/AVC, to achieve the throughput necessary for real-time low power high definition video coding. The combination of syntax element partitions and interleaved entropy slices, referred to as Massively Parallel CABAC, increases the number of binary symbols that can be processed in a cycle. Subinterval reordering is used to reduce the cycle time required to process each binary symbol. Under common conditions using the JM12.0 software, the Massively Parallel CABAC, increases the bins per cycle by 2.7 to 32.8× at a cost of 0.25 to 6.84% coding loss compared with sequential single slice H.264/AVC CABAC. It also provides a 2× reduction in area cost, and reduces memory bandwidth. Subinterval reordering reduces the critical path delay by 14 to 22%, while modifications to context selection reduces the memory requirement by 67%. This work demonstrates that accounting for implementation cost during video coding algorithms design can enable higher processing speed and reduce hardware cost, while still delivering high coding efficiency in the next generation video coding standard.Texas Instruments Incorporated (Graduate Women's Fellowship for Leadership in Microelectronics)Natural Sciences and Engineering Research Council of Canad
Superconducting Quantum Point contacts and Maxwell Potential
The quantization of the current in a superconducting quantum point contact is
reviewed and the critical current is discussed at different temperatures
depending on the carrier concentration as well by suggesting a constant
potential in the semiconductor and then a Maxwell potential. When the Fermi
wave length is comparable with the constriction width we showed that the
critical current has a step-like variation as a function of the constriction
width and the carrier concentration.Comment: 13 pages, 8 figures, some figures are clarified; scheduled to appear
in an issue in MPLB Vo.21, (2007
Impact of elasticity on the piezoresponse of adjacent ferroelectric domains investigated by scanning force microscopy
As a consequence of elasticity, mechanical deformations of crystals occur on
a length scale comparable to their thickness. This is exemplified by applying a
homogeneous electric field to a multi-domain ferroelectric crystal: as one
domain is expanding the adjacent ones are contracting, leading to clamping at
the domain boundaries. The piezomechanically driven surface corrugation of
micron-sized domain patterns in thick crystals using large-area top electrodes
is thus drastically suppressed, barely accessible by means of piezoresponse
force microscopy
Voltage modulated electro-luminescence spectroscopy and negative capacitance - the role of sub-bandgap states in light emitting devices
Voltage modulated electroluminescence spectra and low frequency ({\leq} 100
kHz) impedance characteristics of electroluminescent diodes are studied.
Voltage modulated light emission tracks the onset of observed negative
capacitance at a forward bias level for each modulation frequency. Active
participation of sub-bandgap defect states in minority carrier recombination
dynamics is sought to explain the results. Negative capacitance is understood
as a necessary dielectric response to compensate any irreversible transient
changes in the minority carrier reservoir due to radiative recombinations
mediated by slowly responding sub-bandgap defects. Experimentally measured
variations of the in-phase component of modulated electroluminescence spectra
with forward bias levels and modulation frequencies support the dynamic
influence of these states in the radiative recombination process. Predominant
negative sign of the in-phase component of voltage modulated
electroluminescence signal further confirms the bi-molecular nature of light
emission. We also discuss how these states can actually affect the net density
of minority carriers available for radiative recombination. Results indicate
that these sub-bandgap states can suppress external quantum efficiency of such
devices under high frequency operation commonly used in optical communication.Comment: 21 pages, 4 sets of figure
Modulation of Thermoelectric Power of Individual Carbon Nanotubes
Thermoelectric power (TEP) of individual single walled carbon nanotubes
(SWNTs) has been measured at mesoscopic scales using a microfabricated heater
and thermometers. Gate electric field dependent TEP-modulation has been
observed. The measured TEP of SWNTs is well correlated to the electrical
conductance across the SWNT according to the Mott formula. At low temperatures,
strong modulations of TEP were observed in the single electron conduction
limit. In addition, semiconducting SWNTs exhibit large values of TEP due to the
Schottky barriers at SWNT-metal junctions.Comment: to be published in Phys. Rev. Let
Debye relaxation in high magnetic fields
Dielectric relaxation is universal in characterizing polar liquids and
solids, insulators, and semiconductors, and the theoretical models are well
developed. However, in high magnetic fields, previously unknown aspects of
dielectric relaxation can be revealed and exploited. Here, we report low
temperature dielectric relaxation measurements in lightly doped silicon in high
dc magnetic fields B both parallel and perpendicular to the applied ac electric
field E. For B//E, we observe a temperature and magnetic field dependent
dielectric dispersion e(w)characteristic of conventional Debye relaxation where
the free carrier concentration is dependent on thermal dopant ionization,
magnetic freeze-out, and/or magnetic localization effects. However, for BperpE,
anomalous dispersion emerges in e(w) with increasing magnetic field. It is
shown that the Debye formalism can be simply extended by adding the Lorentz
force to describe the general response of a dielectric in crossed magnetic and
electric fields. Moreover, we predict and observe a new transverse dielectric
response EH perp B perp E not previously described in magneto-dielectric
measurements. The new formalism allows the determination of the mobility and
the ability to discriminate between magnetic localization/freeze out and
Lorentz force effects in the magneto-dielectric response.Comment: 19 pages, 6 figure
Towards spin injection from silicon into topological insulators: Schottky barrier between Si and Bi2Se3
A scheme is proposed to electrically measure the spin-momentum coupling in
the topological insulator surface state by injection of spin polarized
electrons from silicon. As a first approach, devices were fabricated consisting
of thin (<100nm) exfoliated crystals of Bi2Se3 on n-type silicon with
independent electrical contacts to silicon and Bi2Se3. Analysis of the
temperature dependence of thermionic emission in reverse bias indicates a
barrier height of 0.34 eV at the Si-Bi2Se3 interface. This robust Schottky
barrier opens the possibility of novel device designs based on sub-band gap
internal photoemission from Bi2Se3 into Si
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