4,978 research outputs found
Microwave Spectroscopy
Contains report on work completed.Joint Services Electronics Programs (U.S. Army, U. S. Navy, and U. S. Air Force) under Contract DAAB07-71-C-030
Microwave Spectroscopy
Contains reports on work completed.Joint Services Electronics Programs (U.S. Army, U.S. Navy, and U.S. Air Force) under Contract DA 28-043-AMC-02536(E
Transport Phenomena in Solids
Contains reports on one research project.Joint Services Electronics Program (Contract DAAB07-74-C-0630
Magnetic properties of substitutional Mn in (110) GaAs surface and subsurface layers
Motivated by recent STM experiments, we present a theoretical study of the
electronic and magnetic properties of the Mn-induced acceptor level obtained by
substituting a single Ga atom in the (110) surface layer of GaAs or in one of
the atoms layers below the surface. We employ a kinetic-exchange tight-binding
model in which the relaxation of the (110) surface is taken into account. The
acceptor wave function is strongly anisotropic in space and its detailed
features depend on the depth of the sublayer in which the Mn atom is located.
The local-density-of-states (LDOS) on the (110) surface associated with the
acceptor level is more sensitive to the direction of the Mn magnetic moment
when the Mn atom is located further below the surface. We show that the total
magnetic anisotropy energy of the system is due almost entirely to the
dependence of the acceptor level energy on Mn spin orientation, and that this
quantity is strongly dependent on the depth of the Mn atom.Comment: 14 pages, 13 figure
Magnetic interactions of substitutional Mn pairs in GaAs
We employ a kinetic-exchange tight-binding model to calculate the magnetic
interaction and anisotropy energies of a pair of substitutional Mn atoms in
GaAs as a function of their separation distance and direction. We find that the
most energetically stable configuration is usually one in which the spins are
ferromagnetically aligned along the vector connecting the Mn atoms. The
ferromagnetic configuration is characterized by a splitting of the topmost
unoccupied acceptor levels, which is visible in scanning tunneling microscope
studies when the pair is close to the surface and is strongly dependent on pair
orientation. The largest acceptor splittings occur when the Mn pair is oriented
along the symmetry direction, and the smallest when they are oriented
along . We show explicitly that the acceptor splitting is not simply
related to the effective exchange interaction between the Mn local moments. The
exchange interaction constant is instead more directly related to the width of
the distribution of all impurity levels -- occupied and unoccupied. When the Mn
pair is at the (110) GaAs surface, both acceptor splitting and effective
exchange interaction are very small except for the smallest possible Mn
separation.Comment: 25 figure
Microwave Spectroscopy
Contains reports on two research projects.Lincoln Laboratory, Purchase Order DDL BB-107U. S. Air Force under Contract AF 19(628)-50
Microwave Spectroscopy
Contains research objectives, reports on work completed and one research project.Joint Services Electronics Programs (U. S. Army, U.S. Navy, and U.S. Air Force) under Contract DA 28-043-AMC-02536(E
Microwave Spectroscopy
Contains research objectives.U. S. Army Signal Corps under Contract DA36-039-sc-87376Lincoln Laboratory, Purchase Order DDL B-00368U. S. ArmyU. S. NavyU. S. Air Force under Air Force Contract AF19(604)-740
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