30 research outputs found
Synthesis of Highly Enantio-Enriched Heliespirones A and C by a Diastereoselective Aromatic Claisen Rearrangement
Complete nucleotide sequence of the herpesvirus simiae glycoprotein G gene and its expression as an immunogenic fusion protein in bacteria
Heminested Multiplex Reverse Transcription-PCR for Detection and Differentiation of Norwalk-Like Virus Genogroups 1 and 2 in Fecal Samples
The present study describes a heminested multiplex reverse transcription (RT)-PCR assay which enables simultaneous detection and differentiation of Norwalk-like virus (NLV) genogroups from clinical fecal samples without the need to perform sequencing or hybridization. The assay developed was able to detect concentrations of fewer than 100 viral particles per 5 ÎŒl of clarified fecal extract and could differentiate the two genogroups with a specificity of 100%. Although the multiplex RT-PCR assay failed to detect NLV in about 3% of the fecal samples which were NLV positive by electron microscopy (EM), the assay was approximately six times more sensitive than EM for NLV detection
Horseradish Peroxidase as a Reporter Gene and as a Cell-Organelle-Specific Marker in Correlative Light-Electron Microscopy
Outdiffusion of Be during rapid thermal annealing of highâdose Beâimplanted GaAs
The outdiffusion of Be implanted into GaAs has been found to be identical after capless or capped (Si3N4 or Si02 ) rapid thermal annealing (RTA) at 900-1000 ÂșC and to depend on the Be dose and its proximity to the surface. The outdiffusion is more pronounced when the Be implant is shallow (< 0.1 p,m) andlor the Be + dose is high (> 1 X 1015 cm-ÂČ). It is demonstrated that the Be outdiffusion is driven by the presence of a highly damaged surface layer. Auger results suggest the formation of a BeOx compound at the surface of a high.dose (1 X 1016 cm-ÂČ) Be-implanted sample that underwent capless RTA at 1000 ÂșC/1 s. It appears that BeOx formation occurs when the outdiffused Be interacts with the native Gal As oxides during annealing. AU the Be remaining in the GaAs after a > 900 ÂșC/2s RTA is electrically active