45 research outputs found
Magnetotransport properties of a polarization-doped three-dimensional electron slab
We present evidence of strong Shubnikov-de-Haas magnetoresistance
oscillations in a polarization-doped degenerate three-dimensional electron slab
in an AlGaN semiconductor system. The degenerate free carriers
are generated by a novel technique by grading a polar alloy semiconductor with
spatially changing polarization. Analysis of the magnetotransport data enables
us to extract an effective mass of and a quantum
scattering time of . Analysis of scattering processes helps
us extract an alloy scattering parameter for the AlGaN material
system to be
Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures
The influence of AlGaN and GaN cap layer thickness on Hall sheet carrier density and mobility was investigated for Al0.32Ga0.68N/GaN and GaN/Al0.32Ga0.68N/GaN heterostructures deposited on sapphire substrates. The sheet carrier density was found to increase and saturate with the AlGaN layer thickness, while for the GaN-capped structures it decreased and saturated with the GaN cap layer thickness. A relatively close fit was achieved between the measured data and two-dimensional electron gas densities predicted from simulations of the band diagrams. The simulations also indicated the presence of a two-dimensional hole gas at the upper interface of GaN/AlGaN/GaN structures with sufficiently thick GaN cap layers. A surface Fermi-level pinning position of 1.7 eV for AlGaN and 0.9-1.0 eV for GaN, and an interface polarization charge density of 1.6x10(13)-1.7x10(13) cm(-2), were extracted from the simulations. (C) 2003 American Institute of Physics
Cognitive functioning in opioid-dependent patients treated with buprenorphine, methadone, and other psychoactive medications: stability and correlates
Abnormal oscillatory brain dynamics in schizophrenia: a sign of deviant communication in neural network?
<p>Abstract</p> <p>Background</p> <p>Slow waves in the delta (0.5–4 Hz) frequency range are indications of normal activity in sleep. In neurological disorders, focal electric and magnetic slow wave activity is generated in the vicinity of structural brain lesions. Initial studies, including our own, suggest that the distribution of the focal concentration of generators of slow waves (dipole density in the delta frequency band) also distinguishes patients with psychiatric disorders such as schizophrenia, affective disorders, and posttraumatic stress disorder.</p> <p>Methods</p> <p>The present study examined the distribution of focal slow wave activity (ASWA: abnormal slow wave activity) in116 healthy subjects, 76 inpatients with schizophrenic or schizoaffective diagnoses and 42 inpatients with affective (ICD-10: F3) or neurotic/reactive (F4) diagnoses using a newly refined measure of dipole density. Based on 5-min resting magnetoencephalogram (MEG), sources of activity in the 1–4 Hz frequency band were determined by equivalent dipole fitting in anatomically defined cortical regions.</p> <p>Results</p> <p>Compared to healthy subjects the schizophrenia sample was characterized by significantly more intense slow wave activity, with maxima in frontal and central areas. In contrast, affective disorder patients exhibited less slow wave generators mainly in frontal and central regions when compared to healthy subjects and schizophrenia patients. In both samples, frontal ASWA were related to affective symptoms.</p> <p>Conclusion</p> <p>In schizophrenic patients, the regions of ASWA correspond to those identified for gray matter loss. This suggests that ASWA might be evaluated as a measure of altered neuronal network architecture and communication, which may mediate psychopathological signs.</p