3,484 research outputs found

    Revulsion, Restlessness, and Rage Through the Body in Pain: Radical Affects and Political Consciousness in the Ariel Poems

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    The affective path to radicalism unfolds in Plath\u27s Ariel in three stages. Revulsion identifies a shared source of conflict with a clear patriarchal enemy. Restlessness mimics the context and pace of rebellion, including the acute crises that give way to a societal awakening. Rage connotes incipient action and a commitment to upheaval as an act of restorative justice. The associated “ugly feelings” that facilitate such affects are a reflection of how, historically, progress has come at the cost of suffering. Plath’s language and its capacity for commanding this perverse sense of the sublime – particularly its ability to control the reader’s emotional and physical experience of vicarious suffering – culminates in radical cabal across three affected bodies at any given time. From Plath’s syntax to the speakers’ narratives to the readers’ resultant perspectives on time, pain, and desire, political consciousness becomes inseparable from the poetics of the body

    Effect of Buffer Layer and III/V Ratio on the Surface Morphology of GaN Grown by MBE

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    The surface morphology of GaN is observed by atomic force microscopy for growth on GaN and AlN buffer layers and as a function of III/V flux ratio. Films are grown on sapphire substrates by molecular beam epitaxy using a radio frequency nitrogen plasma source. Growth using GaN buffer layers leads to N-polar films, with surfaces strongly dependent on the flux conditions used. Flat surfaces can be obtained by growing as Ga-rich as possible, although Ga droplets tend to form. Ga-polar films can be grown on AlN buffer layers, with the surface morphology determined by the conditions of buffer layer deposition as well as the III/V ratio for growth of the GaN layer. Near-stoichiometric buffer layer growth conditions appear to support the flattest surfaces in this case. Three defect types are typically observed in GaN films on AlN buffers, including large and small pits and "loop" defects. It is possible to produce surfaces free from large pit defects by growing thicker films under more Ga-rich conditions. In such cases the surface roughness can be reduced to less than 1 nm RMS

    Arkansas Cotton Variety Test 2012

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    The primary goal of the Arkansas Cotton Variety Test is to provide unbiased data regarding the agronomic performance of cotton varieties and advanced breeding lines in the major cotton-growing areas of Arkansas. This information helps seed companies establish marketing strategies and assists producers in choosing varieties to plant

    Nutrition rehabilitation units

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    We describe our aims in opening our Nutrition Rehabilitation Unit and its organisation, with emphasis on health education, home budgeting, and demonstration of how kwashiorkor can be cured by a good diet. Our problems of selection concern mostly the recognition of kwashiorkor and infections, proximity to hospital, and finally the problem of follow-up. Looking to the future, it seems obvious to us that follow-up at home is going to become increasingly important. It is an opportunity for combining encouragement, (e.g. persuading mothers to start vegetable gardens), and for health education; also for informing other visitors who may be interested in what is going on, and this constitutes personalised health education. We hope to start clinic-related Nutrition Rehabilitation Units in the district, thus obviating distance from and cost of transport to, the hospital itself. We are still very much at the beginning of our Transkei experiment.S. Afr. Med. J. 48. 2177 (1974)

    Rate constants and Arrhenius parameters for the reactions of OH radicals and Cl atoms with CF3CH2OCHF2, CF3CHClOCHF2 and CF3CH2OCClF2, using the discharge-flow/resonance fluorescence method

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    Rate constants have been determined for the reactions of OH radicals and Cl atoms with the three partially halogenated methyl-ethyl ethers, CF3_3CH2_2OCHF2_2, CF3_3CHClOCHF2_2 and CF3_3CH2_2OCClF2_2, using discharge-flow techniques to generate the OH radicals and the Cl atoms and resonance fluorescence to observe changes in their relative concentrations in the presence of added ether. For each combination of radical and ether, experiments were carried out at three temperatures between 292 and 410 K, yielding the following Arrhenius expressions for the rate constants within this range of temperature: OH + CF3_3CH2_2OCHF2_2: kk = (2.0±\pm0.8) ×\times 1011^{-11} exp( – 2110 ±\pm 150 K / T) cm3^3 molecule1^{-1} s1^{-1} OH + CF3_3CHClOCHF2_2: kk = (4.5 ±\pm 1.3) ×\times 1013^{-13} exp( – 940 ±\pm 100 K / T) cm3^3 molecule1^{-1} s1^{-1} OH + CF3_3CH2_2OCClF2_2: kk = (1.6 ±\pm 0.6) ×\times 1012^{-12} exp( – 1100 ±\pm 125 K / T) cm3^3 molecule1^{-1} s1^{-1} Cl + CF3_3CH2_2OCHF2_2: kk = (6.1 ±\pm 1.4) ×\times 1012^{-12} exp( – 1830 ±\pm 90 K / T) cm3^3 molecule1^{-1} s1^{-1} Cl + CF3_3CHClOCHF2_2: kk = (7.8 ±\pm 2.6) ×\times 1011^{-11} exp( – 2980 ±\pm 130 K / T) cm3^3 molecule1^{-1} s1^{-1} Cl + CF3_3CH2_2OCClF2_2: kk = (2.2 ±\pm 0.2) ×\times 1011^{-11} exp( – 2700 ±\pm 40 K / T) cm3^3 molecule1^{-1} s1^{-1} The results are compared with those obtained previously for the same and related reactions of OH radicals and Cl atoms, and the atmospheric implications of the results are considered briefly
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