206 research outputs found

    Monte Carlo analysis of voltage noise in sub-micrometre semiconductor structures under large-signal regime

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    Sea analiza el método de Monte Carlo y el ruidoUsing an ensemble Monte Carlo technique, we investigate voltage noise(related to diffusion noise sources) in GaAs n+nn+ structures operating underlarge-amplitude periodic signals. A pronounced noise contribution aroundthe frequency of the excitation signal f0 is evidenced. This contribution is mainly associated with the time-varying field sustained by the n region. Its presence and importance depends on the length of the n region and the value of f0. This additional contribution in the voltage noise spectrum tends to disappear for values of f0 beyond the cut-off of the noise related to the n region. On the other hand, the level of low-frequency noise under large-signal conditions is higher than under mall-signal operation due to theincrease of the effective resistance of the structures

    Submillimeter-Wave Oscillations in Recessed InGaAs/InAlAs Heterostructures: Origin and Tunability

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    By means of an ensemble Monte Carlo simulator, the appeareance of THz oscillations in InAlAs/InGaAs slot diodes is predicted when the applied bias exceeds the threshold for intervalley transfer. Such high frequency is attained by the presence of a Gunn-like effect in the recess-to-drain region of the device channel whose dynamics is controlled by ballistic gamma valley electrons. In this work we explain the mechanism at the origin of this effect and also the influence of the bias conditions, delta-doping, recess-to-drain distance and recess length on the frequency of the ultra-fast Gunn like oscillations. The simulations show that a minimum value for the delta-doping is necessary to have enough carrier concentration under the recess and allow the oscillations to emerge. Finally, we show that shortening the devices (small recess and recess-to-drain lengths) increases of the oscillation frequency, so providing an interesting frequency tuneability of this THz source.ROOTHz (FP7-243845

    An Assessment of Available Models for the Design of Schottky-Based Multipliers Up to THz Frequencies

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    [EN]This paper evaluates the ranges of application and physical limitations of lumped equivalent circuits and drift-diffusion models for the design of THz circuits. The predictions of these models have been compared with aMonte Carlo model, which was considered as a reference, and with measurements from doublers and triplers designed and fabricated by the Jet Propulsion Laboratory. Additionally, the usefulness of Schottky diodes as frequency multipliers above 3 THz is analyzed with the Monte Carlo model.European Commision (EC). Funding FP7/SP1/SPA. Project Code: 242334European Commision (EC). Funding FP7/SP1/ICT. Project Code: 24384

    Internet de las cosas: formación de estudiantes en sensores

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    Memoria ID-090. Ayudas de la Universidad de Salamanca para la innovación docente, curso 2019-2020.[ES]El objetivo principal es la actualización y extensión de prácticas de laboratorio de las asignaturas relacionadas incorporando herramientas IoT: implementación de circuitos con sensores controlables remotamente mediante software, generación de contenidos y recursos docentes, medida de parámetros de varios tipos de sensores y creación y difusión a los alumnos de documentación para su montaje y control mediante softwar

    Enseñanza de Electrónica basada en casos: Diseño de PLLs

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    Memoria ID-225. Ayudas de la Universidad de Salamanca para la innovación docente, curso 2019-2020

    Enseñanza de Electrónica basada en casos: diseños de PLLs

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    Memoria ID-225. Ayudas de la Universidad de Salamanca para la innovación docente, curso 2019-2020
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