87 research outputs found
Barrier formation at metal/organic interfaces: dipole formation and the Charge Neutrality Level
The barrier formation for metal/organic semiconductor interfaces is analyzed
within the Induced Density of Interface States (IDIS) model. Using weak
chemisorption theory, we calculate the induced density of states in the organic
energy gap and show that it is high enough to control the barrier formation. We
calculate the Charge Neutrality Levels of several organic molecules (PTCDA,
PTCBI and CBP) and the interface Fermi level for their contact with a Au(111)
surface. We find an excellent agreement with the experimental evidence and
conclude that the barrier formation is due to the charge transfer between the
metal and the states induced in the organic energy gap.Comment: 7 pages, Proceedings of ICFSI-9, Madrid, Spain (September 2003),
special issue of Applied Surface Science (in press
Hall Sensors for Extreme Temperatures
We report on the preparation of the first complete extreme temperature Hall sensor. This means that the extreme-temperature magnetic sensitive semiconductor structure is built-in an extreme-temperature package especially designed for that purpose. The working temperature range of the sensor extends from −270 °C to +300 °C. The extreme-temperature Hall-sensor active element is a heavily n-doped InSb layer epitaxially grown on GaAs. The magnetic sensitivity of the sensor is ca. 100 mV/T and its temperature coefficient is less than 0.04 %/K. This sensor may find applications in the car, aircraft, spacecraft, military and oil and gas industries
Weak localization in InSb thin films heavily doped with lead
The paper reports on the investigations of the weak localization (WL) effects
in 3D polycrystalline thin films of InSb. The films are closely compensated
showing the electron concentration n>10^{16} cm^{-3} at the total concentration
of the donor and acceptor type structural defects >10^{18} cm^{-3}. Unless
Pb-doped, the InSb films do not show any measurable or show very small WL
effect at 4.2 K. The Pb-doping to the concentration of the order of 10^{18}
cm^{-3} leads to pronounced WL effects below 7 K. In particular, a clearly
manifested SO scattering is observed. From the comparison of the experimental
data on temperature dependence of the magnetoresistivity and sample resistance
with the WL theory, the temperature dependence of the phase destroying time is
determined. The determination is performed by fitting theoretical terms
obtained from Kawabata's theory to experimental data on magnetoresistance. It
is concluded that the dephasing process is connected to three separate
interaction processes. The first is due to the SO scatterings and is
characterized by temperature-independent relaxation time. The second is
associated with the electron-phonon interaction. The third dephasing process is
characterized by independent on temperature relaxation time tau_c. This
relaxation time is tentatively ascribed to inelastic scattering at extended
structural defects, like grain boundaries. The resulting time dephasing time
shows saturation in its temperature dependence. The temperature dependence of
the resistance of the InSb films can be explained by the electron-electron
interaction for T2 K.Comment: 15 pages with 5 figure
Dipole formation at metal/PTCDA interfaces: Role of the Charge Neutrality Level
The formation of a metal/PTCDA (3, 4, 9, 10-perylenetetracarboxylic
dianhydride) interface barrier is analyzed using weak-chemisorption theory. The
electronic structure of the uncoupled PTCDA molecule and of the metal surface
is calculated. Then, the induced density of interface states is obtained as a
function of these two electronic structures and the interaction between both
systems. This induced density of states is found to be large enough (even if
the metal/PTCDA interaction is weak) for the definition of a Charge Neutrality
Level for PTCDA, located 2.45 eV above the highest occupied molecular orbital.
We conclude that the metal/PTCDA interface molecular level alignment is due to
the electrostatic dipole created by the charge transfer between the two solids.Comment: 6 page
Analytical Model of Spin-Polarized Semiconductor Lasers
We formulate an analytical model for vertical-cavity surface-emitting lasers
(VCSELs) with injection (pump) of spin-polarized electrons. Our results for two
different modes of carrier recombination allow for a systematic analysis of the
operational regimes of the spin-VCSELs. We demonstrate that threshold reduction
by electrically-pumped spin-polarized carriers can be larger than previously
assumed possible. Near the threshold, such VCSELs can act as effective
non-linear filters of circularly-polarized light, owing to their spin-dependent
gain.Comment: 4 pages, 3 figure
Domain Wall Resistance in Perpendicular (Ga,Mn)As: dependence on pinning
We have investigated the domain wall resistance for two types of domain walls
in a (Ga,Mn)As Hall bar with perpendicular magnetization. A sizeable positive
intrinsic DWR is inferred for domain walls that are pinned at an etching step,
which is quite consistent with earlier observations. However, much lower
intrinsic domain wall resistance is obtained when domain walls are formed by
pinning lines in unetched material. This indicates that the spin transport
across a domain wall is strongly influenced by the nature of the pinning.Comment: 9 pages, 3 figure
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