Coulomb Blockade of Proximity Effect at Large Conductance

We consider the proximity effect in a normal dot coupled to a bulk superconducting reservoir by the tunnel contact with large normal conductance. Coulomb interaction in the dot suppresses the proximity minigap induced in the normal part of the system. We find exact expressions for the thermodynamic and tunneling minigaps as functions of the junction's capacitance. The tunneling minigap interpolates between its proximity-induced value in the regime of weak Coulomb interaction to the Coulomb gap in the regime of strong interaction. In the intermediate case a non-universal two-step structure of the tunneling density of states is predicted. The charge quantization in the dot is also studied.Comment: 4 pages (RevTeX), 3 figures. Version 2: minor corrections, a figure and two references adde

Diffusion and criticality in undoped graphene with resonant scatterers

A general theory is developed to describe graphene with arbitrary number of isolated impurities. The theory provides a basis for an efficient numerical analysis of the charge transport and is applied to calculate the minimal conductivity of graphene with resonant scatterers. In the case of smooth resonant impurities conductivity grows logarithmically with increasing impurity concentration, in agreement with renormalization group analysis for the symmetry class DIII. For vacancies (or strong on-site potential impurities) the conductivity saturates at a constant value that depends on the vacancy distribution among two sublattices as expected for the symmetry class BDI.Comment: 4 pages, 2 figure

L\'evy flights due to anisotropic disorder in graphene

We study transport properties of graphene with anisotropically distributed on-site impurities (adatoms) that are randomly placed on every third line drawn along carbon bonds. We show that stripe states characterized by strongly suppressed back-scattering are formed in this model in the direction of the lines. The system reveals L\'evy-flight transport in stripe direction such that the corresponding conductivity increases as the square root of the system length. Thus, adding this type of disorder to clean graphene near the Dirac point strongly enhances the conductivity, which is in stark contrast with a fully random distribution of on-site impurities which leads to Anderson localization. The effect is demonstrated both by numerical simulations using the Kwant code and by an analytical theory based on the self-consistent $T$-matrix approximation.Comment: 11 pages, 6 figure

Quantum Hall criticality and localization in graphene with short-range impurities at the Dirac point

We explore the longitudinal conductivity of graphene at the Dirac point in a strong magnetic field with two types of short-range scatterers: adatoms that mix the valleys and "scalar" impurities that do not mix them. A scattering theory for the Dirac equation is employed to express the conductance of a graphene sample as a function of impurity coordinates; an averaging over impurity positions is then performed numerically. The conductivity $\sigma$ is equal to the ballistic value $4e^2/\pi h$ for each disorder realization provided the number of flux quanta considerably exceeds the number of impurities. For weaker fields, the conductivity in the presence of scalar impurities scales to the quantum-Hall critical point with $\sigma \simeq 4 \times 0.4 e^2/h$ at half filling or to zero away from half filling due to the onset of Anderson localization. For adatoms, the localization behavior is obtained also at half filling due to splitting of the critical energy by intervalley scattering. Our results reveal a complex scaling flow governed by fixed points of different symmetry classes: remarkably, all key manifestations of Anderson localization and criticality in two dimensions are observed numerically in a single setup.Comment: 17 pages, 4 figure

Ballistic charge transport in chiral-symmetric few-layer graphene

A transfer matrix approach to study ballistic charge transport in few-layer graphene with chiral-symmetric stacking configurations is developed. We demonstrate that the chiral symmetry justifies a non-Abelian gauge transformation at the spectral degeneracy point (zero energy). This transformation proves the equivalence of zero-energy transport properties of the multilayer to those of the system of uncoupled monolayers. Similar transformation can be applied in order to gauge away an arbitrary magnetic field, weak strain, and hopping disorder in the bulk of the sample. Finally, we calculate the full-counting statistics at arbitrary energy for different stacking configurations. The predicted gate-voltage dependence of conductance and noise can be measured in clean multilayer samples with generic metallic leads.Comment: 6 pages, 5 figures; EPL published versio

Information Aggregation in Exponential Family Markets

We consider the design of prediction market mechanisms known as automated market makers. We show that we can design these mechanisms via the mold of \emph{exponential family distributions}, a popular and well-studied probability distribution template used in statistics. We give a full development of this relationship and explore a range of benefits. We draw connections between the information aggregation of market prices and the belief aggregation of learning agents that rely on exponential family distributions. We develop a very natural analysis of the market behavior as well as the price equilibrium under the assumption that the traders exhibit risk aversion according to exponential utility. We also consider similar aspects under alternative models, such as when traders are budget constrained

Electric Transport Theory of Dirac Fermions in Graphene

Using the self-consistent Born approximation to the Dirac fermions under finite-range impurity scatterings, we show that the current-current correlation function is determined by four-coupled integral equations. This is very different from the case for impurities with short-range potentials. As a test of the present approach, we calculate the electric conductivity in graphene for charged impurities with screened Coulomb potentials. The obtained conductivity at zero temperature varies linearly with the carrier concentration, and the minimum conductivity at zero doping is larger than the existing theoretical predictions, but still smaller than that of the experimental measurement. The overall behavior of the conductivity obtained by the present calculation at room temperature is similar to that at zero temperature except the minimum conductivity is slightly larger.Comment: 6 pages, 3 figure