Effect of indium doping on the electrical and structural properties of TiO2 thin films used in MOS devices

We investigated the effect of Indium (In) doping on the structural and electrical properties of Ti/Au/ TiO2:In/n-Si metal-oxide-semiconductor (MOS) devices. Sputtering grown TiO2 thin films on Si substrate were doped using two In-films with 15 nm and 50 nm thicknesses leading to two structures named Low Indium Doped (LID) sample and High Indium Doped (HID) sample, respectively. XRD analysis shows no diffraction pattern related to Indium indicating that In has been incorporated into the TiO2 lattice. Current-Voltage (I-V) characteristics show that rectification ratio at 2V is higher for HID sample than for LID sample. Evaluated barrier height, ϕB0 , decreased while the ideality factor, n, increased with decreasing temperature. Such behavior is ascribed to barrier inhomogeneity that was assumed to have a Gaussian Distribution (GD) of barrier heights at interface. Evidence of such GD was confirmed by plotting ϕB0versus n. High value of mean barrier ϕ̅B0 and lower value of standard deviation (σ) of HID structure are due to indium doping which increases the barrier homogeneities. Finally, estimated Richardson constants A* are in good agreement with theoretic values (112 A/cm2K2), particularly, for the HID structure

Al/Si3N4/p-Si aygıtının C-V characteristikleri üzerine metal ile yarıiletken kontak arasındaki yalıtkan tabakanın kalınlık etkisi

Metal-Yalıtkan-Yarıiletken (MIS) yapılar elektronik ve optoelektronikteki iyi uygulamalarından büyük ilgiye sahiptirler. Bu yapıların önemi tabaka depolama özelliği, kapasitans etkisi ve yüksek dileketrik sabitlerine sahip olmalarına dayandırılabilir. Bu yüzden Si3N4 tabakalı iki adet numune plazma destekli kimyasal buhar biriktirme (PECVD) yöntemiyle birinin kalınlığı 5 nm diğerinin kalınlığı 50 nm olacak şekilde p-tip Si üzerine büyütüldü. Si3N4 tabakasının kalınlığı bir elipsometreyle kontrol edildi. Al/Si3N4/p tip Si kontağın üzerine Si3N4 tabakasının kalınlık etkisi 10 kHz-1 MHz frekans değerleri için -5 V’tan +5 V voltaj aralığında yapıların kapasitans-voltaj (C–V) ve iletkenlik-voltaj (G–V) karakteristikleri ile oda sıcaklığında araştırıldı. Farklı kalınlığa sahip kontakların her bir durumda kapasitans değerlerinin artan frekansla azaldığı ve iletkenlik değerlerinin arttığı tespit edildi. Ara yüzey durumları (Nss) ve Seri direnç (Rs) etkileri, bariyer yüksekliği (Φb) ve taşıyıcı yoğunluğu (Na) kapasitans-voltaj (C–V) ve iletkenlik-voltaj (G–V) karakteristikleri karakterizasyonlardan elde edildi ve açıklandı. Ayrıca 5 nm ve 50 nm kalınlık değerindeki tabakalar için 500 kHz frekansta çift yönlü C-V ve G-V karakterizasyonlarından elde edildi ve kıyaslandı. Sonuç olarak, Si3N4 tabakasının kalınlık değişiminin kontakların özelliklerini etkilediği görüldü ve bu kontakların Memrezistör yapısına sahiptirler ve gelecekte hafıza aygıtları için kullanılabilir ve geliştirilebilirler

The investigation of current condition mechanism of Al/Y2O3/p-Si Schottky barrier diodes in wide range temperature and illuminate

© 2021 Elsevier LtdYttrium oxide (Y2O3) powder was used as an interface layer between metal (Al) and semiconductor (p-Si). Y2O3 powder was coated with a spin-coating method on the p-Si and the Al/Y2O3/p-Si Schottky Barrier Diodes (SBD) was fabricated. The electrical characteristics of the fabricated SBD were analyzed at various temperatures and compared with each other. While ΦB0 decrease from 0.931 eV to 0.211 eV, n increased from 1.63 to 10.07 with decreasing temperature ranging from 340 K to 60 K. The Richardson constant (A⁎) value obtained experimentally for the Al/Y2O3/p-Si SBD was founded as very close to the theoretical A⁎ value of p-Si. Photoconductivity mechanism (PM) of the Al/Y2O3/p-Si SBD was examined by using the photocurrent and the illuminating intensity at −1 V and it was seen that it had a nonlinear behavior. Additionally, the structural and morphologic properties of pure-Y2O3 were analyzed by using X-Rays Diffraction (XRD), Scanning Electron Microscopy (SEM), and Raman spectroscopy (Raman). The fabricated Al/Y2O3/p-Si SBD can be used as a photodiode application in various electronic and optoelectronic technologies

The Thickness Effect of Insulator Layer between Semiconductor and Metal Contact

Metal-insulator-semiconductor (MIS) structures have been investigated theirs good applications in electronic and optoelectronic. Their importance attributes that they have storage layer property, capacitance effect and high dielectric constant. For this reason, two samples of Si3N4 layers were deposited with plasma-enhanced chemical vapor deposition (PECVD) technique on p-type Si; first is about 5 nm thickness and the other is about 50 nm. The thicknesses of Si3N4 were adjusted by an ellipsometer. It was studied the thickness effect of Si3N4 layers on the Al/Si3N4/p type Si contact and acquired the capacitance-voltage (C–V) and conductance–voltage (G-V) characteristics of the structures in the frequency and applied bias voltage ranges of 10 kHz to 1 MHz and -5 V to +5 V, respectively, at room temperature. Changing of Si3N4 layer thickness could be seen that influenced characterizations of the contacts. In each contact having different insulator layers, capacitance values decreased and conductance values increased with increasing frequencies. The interface states (Nss), the effect of series resistance (Rs), barrier height (?b) and carrier concentration (Na) were found from characterizations and explained. It was also measured and compared C–V and G-V characterizations dual measurement at 500 kHz in the room temperature for 5 nm and 50 nm thicknesses layers. It could be seen that they have similarly memristor structure and can be used and improved for memory devices

The thickness effect of insulator layer between the semiconductor and metal contact on C-V characteristics of Al/Si3N4/p-Si device

WOS: 000443170500009Metal-insulator-semiconductor (MIS) structures have great interest for their good applications in electronic and optoelectronic. Their importance can be attributed that they have storage layer property, capacitance effect and high dielectric constant. For this reason, two samples of Si3N4 layers were deposited with plasma-enhanced chemical vapor deposition (PECVD) technique on p-type Si; first is about 5 nm thickness and the other is about 50 nm. The thicknesses of Si(3)N4 were adjusted by an ellipsometer. The thickness effect of Si3N4 layers on the Al/Si3N4/p type Si contact was studied with the capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics of the contact at the frequency range from 10 kHz to 1 MHz and applied bias voltage from-5 V to +5 Vat room temperature. In each contact having different insulator layers, capacitance values decreased and conductance values increased with increasing frequencies. The interface states (Nss), the effect of series resistance (Rs), barrier height (1b) and carrier concentration (k) were found from the capacitance-voltage (C-V) and conductance-voltage (G-V) measurements and explained in the details. To determine memristor behavior of the Al/Si3N4/p type Si contact, dual C-V and G-V measurements were performed at 500 kHz and the room temperature, and the results were compared for 5 nm and 50 nm thicknesses layers. Consequently, changing of Si3N4 layer thickness influenced properties of the contacts, and these two contacts have memristor behavior and, they can be used and improved as memory devices in the future

Impact of rectifier metal-semiconductor contact geometry on electrical properties of Schottky diodes with Mg3N2 interfacial layer

The Ag/Mg3N2/p-Si heterojunction diode (HD) with rectifier contacts (RCs) with the same area in various geometries were fabricated through thermal evaporation, and the electrical performances of these diodes was compared. The geometry of the RC was found to affect various electrical properties such as ideality factor, saturation current and barrier height of HD, the rectifier rate, and the leakage current of the diodes. The experimental demonstrated the HD with a circular RC exhibited a higher rectifying ratio and lower leakage current compared to the other RCs. Hence, the design and optimization of the RC play a critical role in achieving the desired electrical properties of diode. These diodes, featuring an Mg3N2 interfacial layer and showcasing photoconductive behavior, can be utilized as photodiodes in various optoelectronic devices

Capacitance-voltage-frequency measurements of Al/Azure C/p type Si heterojunction

In this study, we fabricated Al/Azure C/p type Si heterojunction by thermal evaparation. Electrical characterization of the device was investigated and calculated some diodes parameters, such as ideality factor (n) and barrier height (Φ). Capacitance –voltage and capacitance-frequency measurement of the device were taken at room temperature 100 kHz-1000 MHz step by 100 kHz. As can be seen the figure, the device has been shown that the measure capacitance decreases with increasing frequency and capacitance decreases with decreasing voltage at room temperature

Electrical properties of Al/p-Si diode with AlN interface layer under temperature and illumination stimuli for sensing applications

Al/AlN/p-Si diode was fabricated via thermal evaporation. The electrical properties of the structure were examined under various temperatures, illuminations, and frequencies. Temperature-dependent electrical properties were investigated using several different methods, which are the Thermionic Emission theory, Norde Function, and Cheung&Cheung Functions. The ideality factor, zero-bias barrier height, and series resistance values obtained from the Current–Voltage-Temperature plot of the diode were compared with each other. It was seen that the values obtained from three different methods were in good agreement with each other. Additionally, current–voltage measurements depending on the illumination intensity showed that the designed structure responds to light. The time-dependent photocurrent of the structure was examined with the switch on and off. The root mean square value for Aluminium nitride interfacial layer was found to be 4 nm from the Atomic Force Microscope measurements. Experimental results revealed that the fabricated structure is a candidate for sensing applications such as temperature or light sensors