Weighted sum formula for variants of half multiple zeta values

We prove some weighted sum formulas for half multiple zeta values, half finite multiple zeta values, and half symmetric multiple zeta values. The key point of our proof is Dougall's identity for the generalized hypergeometric function ${}_{5}F_{4}$. Similar results for interpolated refined symmetric multiple zeta values and half refined symmetric multiple zeta values are also discussed.Comment: 19 page

High-performance Ge/Si electro-absorption optical modulator up to 85°C and its highly efficient photodetector operation

We studied a high-speed Ge/Si electro-absorption optical modulator (EAM) evanescently coupled with a Si waveguide of a lateral p–n junction for a high-bandwidth optical interconnect over a wide range of temperatures from 25 °C to 85 °C. We demonstrated 56 Gbps high-speed operation at temperatures up to 85 °C. From the photoluminescence spectra, we confirmed that the bandgap energy dependence on temperature is relatively small, which is consistent with the shift in the operation wavelengths with increasing temperature for a Ge/Si EAM. We also demonstrated that the same device operates as a high-speed and high-efficiency Ge photodetector with the Franz-Keldysh (F-K) and avalanche-multiplication effects. These results demonstrate that the Ge/Si stacked structure is promising for both high-performance optical modulators and photodetectors integrated on Si platforms

Impact of the semiconductor on hexagonal-BN structure for power-supply on chip applications

This paper evaluates the semiconductor on hexagonal-BN (h-BN) structure for power-supply on chip applications based on numerical simulations. Hexagonal-BN is used as an insulator of semiconductor -on-insulator (SOI) structure. Hexagonal-BN based SOI structure with through-silicon-via(TSV) shows higher heat dissipation performance without degrading electrical characteristics compared with the conventional SOI structure.2018 International Conference on Solid State Devices and Materials(SSDM2018), September9-13, 2018, Hongo Campus, The University of Tokyo, Tokyo, Japa