Acoustoelectric transient spectroscopy of microwave treated GaAs-based structures

The effects of microwave (2.45 GHz) treatment influence on the cross section for electron capture and the energy of the deep levels in the forbidden gap of GaAs monocrystals and n-n⁺ epitaxial structures have been investigated using acoustoelectric transient spectroscopy

Ultrasonic assisted nanomanipulations with atomic force microscope

Demonstrated experimentally in this work was the possibility of controlled handling the nanoparticles with the size from 50 up to 250 nm on a semiconductor surface by using an atomic force microscope under conditions of acoustic excitation. It has been shown that the selective transport of particles of a certain size is possible owing to the change of an ultrasonic vibration amplitude. Also in this study, possible mechanisms in which ultrasound may influence the particle-surface interaction and the probe-particle (surface) interaction have been analyzed