Theory of Ferromagnetism in Diluted Magnetic Semiconductor Quantum Wells

We present a mean field theory of ferromagnetism in diluted magnetic semiconductor quantum wells. When subband mixing due to exchange interactions between quantum well free carriers and magnetic impurities is neglected, analytic result can be obtained for the dependence of the critical temperature and the spontaneous magnetization on the distribution of magnetic impurities and the quantum well width. The validity of this approximate theory has been tested by comparing its predictions with those from numerical self-consistent field calculations. Interactions among free carriers, accounted for using the local-spin-density approximation, substantially enhance the critical temperature. We demonstrate that an external bias potential can tune the critical temperature through a wide range.Comment: 4 pages, 3 figures, submitted to Phys. Rev.

Clustering induced suppression of ferromagnetism in diluted magnets

Ferromagnetism in diluted magnets in the compensated regime p << x is shown to be suppressed by the formation of impurity spin clusters. The majority bulk spin couplings are shown to be considerably weakened by the preferential accumulation of holes in spin clusters, resulting in low-energy magnon softening and enhanced low-temperature decay of magnetic order. A locally self-consistent magnon renormalization analysis of spin dynamics shows that although strong intra-cluster correlations tend to prolong global order, T_c is still reduced compared to the ordered case.Comment: published version, 5 pages, 4 figure

Transition temperature of ferromagnetic semiconductors: a dynamical mean field study

We formulate a theory of doped magnetic semiconductors such as Ga$_{1-x}$Mn$_x$As which have attracted recent attention for their possible use in spintronic applications. We solve the theory in the dynamical mean field approximation to find the magnetic transition temperature $T_c$ as a function of magnetic coupling strength $J$ and carrier density $n$. We find that $T_c$ is determined by a subtle interplay between carrier density and magnetic coupling.Comment: 4 pages, 4 figure

Global versus Local Ferromagnetism in a Model for Diluted Magnetic Semiconductors Studied with Monte Carlo Techniques

A model recently introduced for diluted magnetic semiconductors by Berciu and Bhatt (PRL 87, 107203 (2001)) is studied with a Monte Carlo technique, and the results are compared to Hartree-Fock calculations. For doping rates close to the experimentally observed metal-insulator transition, a picture dominated by ferromagnetic droplets formed below a T* scale emerges. The moments of these droplets align as the temperature is lowered below a critical value Tc<T*. Our Monte Carlo investigations provide critical temperatures considerably smaller than Hartree-Fock predictions. Disorder does not seem to enhance ferromagnetism substantially. The inhomogeneous droplet state should be strongly susceptible to changes in doping and external fields.Comment: 4 pages, 4 figure

Theory of Magnetic Properties and Spin-Wave Dispersion for Ferromagnetic (Ga,Mn)As

We present a microscopic theory of the long-wavelength magnetic properties of the ferromagnetic diluted magnetic semiconductor (Ga,Mn)As. Details of the host semiconductor band structure, described by a six-band Kohn-Luttinger Hamiltonian, are taken into account. We relate our quantum-mechanical calculation to the classical micromagnetic energy functional and determine anisotropy energies and exchange constants. We find that the exchange constant is substantially enhanced compared to the case of a parabolic heavy-hole-band model.Comment: 9 pages, 4 figure

A non-perturbative estimate of the heavy quark momentum diffusion coefficient

We estimate the momentum diffusion coefficient of a heavy quark within a pure SU(3) plasma at a temperature of about 1.5Tc. Large-scale Monte Carlo simulations on a series of lattices extending up to 192^3*48 permit us to carry out a continuum extrapolation of the so-called colour-electric imaginary-time correlator. The extrapolated correlator is analyzed with the help of theoretically motivated models for the corresponding spectral function. Evidence for a non-zero transport coefficient is found and, incorporating systematic uncertainties reflecting model assumptions, we obtain kappa = (1.8 - 3.4)T^3. This implies that the "drag coefficient", characterizing the time scale at which heavy quarks adjust to hydrodynamic flow, is (1.8 - 3.4) (Tc/T)^2 (M/1.5GeV) fm/c, where M is the heavy quark kinetic mass. The results apply to bottom and, with somewhat larger systematic uncertainties, to charm quarks.Comment: 18 pages. v2: clarifications adde

Critical point and scale setting in SU(3) plasma: An update

We explore a method developed in statistical physics which has been argued to have exponentially small finite-volume effects, in order to determine the critical temperature Tc of pure SU(3) gauge theory close to the continuum limit. The method allows us to estimate the critical coupling betac of the Wilson action for temporal extents up to Nt ~ 20 with < 0.1% uncertainties. Making use of the scale setting parameters r0 and sqrt{t0} in the same range of beta-values, these results lead to the independent continuum extrapolations Tc r0 = 0.7457(45) and Tc sqrt{t0} = 0.2489(14), with the latter originating from a more convincing fit. Inserting a conversion of r0 from literature (unfortunately with much larger errors) yields Tc / LambdaMSbar = 1.24(10).Comment: 12 pages. v2: clarifications and references added, published versio

Field Effect Magnetization Reversal in Ferromagnetic Semiconductor Quantum Wells

We predict that a novel bias-voltage assisted magnetization reversal process will occur in Mn doped II-VI semiconductor quantum wells or heterojunctions with carrier induced ferromagnetism. The effect is due to strong exchange-coupling induced subband mixing that leads to electrically tunable hysteresis loops. Our model calculations are based on the mean-field theory of carrier induced ferromagnetism in Mn-doped quantum wells and on a semi-phenomenological description of the host II-VI semiconductor valence bands.Comment: 5 pages, 4 figure

In-situ growth of superconducting NdFeAs(O,F) thin films by Molecular Beam Epitaxy

The recently discovered high temperature superconductor F-doped LaFeAsO and related compounds represent a new class of superconductors with the highest transition temperature (Tc) apart from the cuprates. The studies ongoing worldwide are revealing that these Fe-based superconductors are forming a unique class of materials that are interesting from the viewpoint of applications. To exploit the high potential of the Fe-based superconductors for device applications, it is indispensable to establish a process that enables the growth of high quality thin films. Efforts of thin film preparation started soon after the discovery of Fe-based superconductors, but none of the earlier attempts had succeeded in an in-situ growth of a superconducting film of LnFeAs(O,F) (Ln=lanthanide), which exhibits the highest Tc to date among the Fe-based superconductors. Here, we report on the successful growth of NdFeAs(O,F) thin films on GaAs substrates, which showed well-defined superconducting transitions up to 48 K without the need of an ex-situ heat treatment