Pion structure in a nuclear medium

The structure and electroweak properties of the pion in symmetric nuclear matter are presented in the framework of the Nambu--Jona-Lasinio model. The pion is described as a bound state of a dressed quark-antiquark pair governed by the Bethe-Salpeter equation. For the in-medium current-light-quark properties we use the quark-meson coupling model, which describes successfully the properties of hadron in a nuclear medium. We found that the light-quark condensates, the pion decay constant and pion-quark coupling constant decrease with increasing nuclear matter density. We then predict the modifications of the charge radius of the charged pion in nuclear matter.Comment: 4 pages, 6 figures, accepted version for the QNP2018 proceedings, 8th International Conference on Quarks and Nuclear Physics (QNP2018), November 13-17, 2018, Tsukuba, Ibaraki, Japa

Effects of medium modifications of nucleon form factors on neutrino scattering in dense matter

Effects of the in-medium modifications of nucleon form factors on neutrino interaction in dense matter are presented by considering both the weak and electromagnetic interactions of neutrinos with the constituents of the matter. A relativistic mean field and the quark-meson coupling models are respectively adopted for the effective nucleon mass and in-medium nucleon form factors. We calculate the cross-section of neutrino scattering as well as the neutrino mean free path. We found the cross sections of neutrino scattering in cold nuclear medium decreases when the in-medium modifications of the nucleon weak and electromagnetic form factors are taken into account.This reduction results in the enhancement of the neutrino mean free path, in particular at the baryon density of around a few times of the normal nuclear matter density.Comment: 4 pages, 2 figures, accepted for the QNP2018 proceedings, a talk given at QNP2018, 8th International Conference on Quarks and Nuclear Physics (QNP2018), November 13-17, 2018, Tsukuba, Ibaraki, Japa

Neutral scalar Higgs bosons in the USSM at the LHC

We study the possibility of discovering neutral scalar Higgs bosons in the $U(1)'$-extended supersymmetric standard model (USSM) at the CERN Large Hadron Collider (LHC), by examining their productions via the exotic quark loop in the gluon fusion process at leading order. It is possible in some parameter region that the neutral scalar Higgs bosons may have stronger couplings with the exotic quarks than with top quark. In this case, the exotic quarks may contribute more significantly than top quark in productions of the neutral scalar Higgs bosons in the gluon fusion process. We find that there is indeed some parameter region in the USSM that supports our speculations.Comment: 18 pages; changed content; JPhys

Higher Derivative CP(N) Model and Quantization of the Induced Chern-Simons Term

We consider higher derivative CP(N) model in 2+1 dimensions with the Wess-Zumino-Witten term and the topological current density squared term. We quantize the theory by using the auxiliary gauge field formulation in the path integral method and prove that the extended model remains renormalizable in the large N limit. We find that the Maxwell-Chern-Simons theory is dynamically induced in the large N effective action at a nontrivial UV fixed point. The quantization of the Chern-Simons term is also discussed.Comment: 8 pages, no figure, a minor change in abstract, added Comments on the quantization of the Chern-Simons term whose coefficient is also corrected, and some references are added. Some typos are corrected. Added a new paragraph checking the equivalence between (3) and (5), and a related referenc

Coisotropic Branes, Noncommutativity, and the Mirror Correspondence

We study coisotropic A-branes in the sigma model on a four-torus by explicitly constructing examples. We find that morphisms between coisotropic branes can be equated with a fundamental representation of the noncommutatively deformed algebra of functions on the intersection. The noncommutativity parameter is expressed in terms of the bundles on the branes. We conjecture these findings hold in general. To check mirror symmetry, we verify that the dimensions of morphism spaces are equal to the corresponding dimensions of morphisms between mirror objects.Comment: 13 page

Nonvolatile memories using deep traps formed in HfO₂ by Nb ion implantation

We report nonvolatile memories (NVMs) based on deep-energy trap levels formed in HfO₂ by metal ion implantation. A comparison of Nb- and Ta-implanted samples shows that suitable charge-trapping centers are formed in Nb-implanted samples, but not in Ta-implanted samples. This is consistent with density-functional theory calculations which predict that only Nb will form deep-energy levels in the bandgap of HfO₂. Photocurrent spectroscopy exhibits characteristics consistent with one of the trap levels predicted in these calculations. Nb-implanted samples showing memory windows in capacitance–voltage (V) curves always exhibit current (I) peaks in I–V curves, indicating that NVM effects result from deep traps in HfO₂. In contrast, Ta-implanted samples show dielectric breakdowns during the I–V sweeps between 5 and 11 V, consistent with the fact that no trap levels are present. For a sample implanted with a fluence of 10¹³Nb cm⁻², the charge losses after 10⁴ s are ∼9.8 and ∼25.5% at room temperature (RT) and 85°C, respectively, and the expected charge loss after 10 years is ∼34% at RT, very promising for commercial NVMs

Molecular beam epitaxial growth of high-quality InSb on InP and GaAs substrates

Epitaxial layers of InSb were grown on InP and GaAs substrates by molecular beam epitaxy. The dependence of the epilayer quality on flux ratio, J sub Sb4/J sub In, was studied. Deviation from an optimum value of J sub Sb4/J sub In (approx. 2) during growth led to deterioration in the surface morphology and the electrical and crystalline qualities of the films. Room temperature electron mobilities as high as 70,000 and 53,000 sq cm /V-s were measured in InSb layers grown on InP and GaAs substrates, respectively. Unlike the previous results, the conductivity in these films is n-type even at T = 13 K, and no degradation of the electron mobility due to the high density of dislocations was observed. The measured electron mobilities (and carrier concentrations) at 77 K in InSb layers grown on InP and GaAs substrates are 110,000 sq cm/V-s (3 x 10(15) cm(-3)) and 55,000 sq cm/V-s (4.95 x 10(15) cm(-3)), respectively, suggesting their application to electronic devices at cryogenic temperatures

Probing High Redshift Radiation Fields with Gamma-Ray Absorption

The next generation of gamma-ray telescopes may be able to observe gamma-ray blazars at high redshift, possibly out to the epoch of reionization. The spectrum of such sources should exhibit an absorption edge due to pair-production against UV photons along the line of sight. One expects a sharp drop in the number density of UV photons at the Lyman edge E_{L}. This implies that the universe becomes transparent after gamma-ray photons redshift below E (m_{e}c^2)^{2}/E_{L} 18 GeV. Thus, there is only a limited redshift interval over which GeV photons can pair produce. This implies that any observed absorption will probe radiation fields in the very early universe, regardless of the subsequent star formation history of the universe. Furthermore, measurements of differential absorption between blazars at different redshifts can cleanly isolate the opacity due to UV emissivity at high redshift. An observable absorption edge should be present for most reasonable radiation fields with sufficient energy to reionize the universe. Ly-alpha photons may provide an important component of the pair-production opacity. Observations of a number of blazars at different redshifts will thus allow us to probe the rise in comoving UV emissivity with time.Comment: ApJ accepted version, minor changes. 19 pages, 5 figure