Levels and Timing of Nitrogen Fertilizer Applications for Tall Fescue in Central Alabama

Tall fescue (Festuca arundinacea Schreb.), the most important cool season perennial pasture grass in the United States, is generally well adapted to the northern two-thirds of Alabama. Unfortunately, the most commonly grown tall fescue cultivar, Kentucky 31, is of northern origin and is dormant during the winter. To reduce this problem, AU Triumph was selected from Mediterranean germplasm. The Alabama Agricultural Experiment Station released this cultivar to growers in 1981. Compared to Kentucky 31, AU Triumph produces about 80 percent more forage during the winter and produces mature seed about 2 weeks earlier in the spring. Total annual forage production for the two cultivars is usually about the same

Levels and Timing of Nitrogen Fertilizer Applications for Tall Fescue in Central Alabama

Tall fescue (Festuca arundinacea Schreb.), the most important cool season perennial pasture grass in the United States, is generally well adapted to the northern two-thirds of Alabama. Unfortunately, the most commonly grown tall fescue cultivar, Kentucky 31, is of northern origin and is dormant during the winter. To reduce this problem, AU Triumph was selected from Mediterranean germplasm. The Alabama Agricultural Experiment Station released this cultivar to growers in 1981. Compared to Kentucky 31, AU Triumph produces about 80 percent more forage during the winter and produces mature seed about 2 weeks earlier in the spring. Total annual forage production for the two cultivars is usually about the same

The multiple ionospheric probe Auroral ionospheric report

Multiple impedance and resonance probe payload for ionospheric property observation in Nike- Apache rocke

Electronic states of metallic and semiconducting carbon nanotubes with bond and site disorder

Disorder effects on the density of states in carbon nanotubes are analyzed by a tight binding model with Gaussian bond or site disorder. Metallic armchair and semiconducting zigzag nanotubes are investigated. In the strong disorder limit, the conduction and valence band states merge, and a finite density of states appears at the Fermi energy in both of metallic and semiconducting carbon nanotubes. The bond disorder gives rise to a huge density of states at the Fermi energy differently from that of the site disorder case. Consequences for experiments are discussed.Comment: Phys. Rev. B: Brief Reports (to be published). Related preprints can be found at http://www.etl.go.jp/~harigaya/NEW.htm

Subband population in a single-wall carbon nanotube diode

We observe current rectification in a molecular diode consisting of a semiconducting single-wall carbon nanotube and an impurity. One half of the nanotube has no impurity, and it has a current-voltage (I-V) charcteristic of a typical semiconducting nanotube. The other half of the nanotube has the impurity on it, and its I-V characteristic is that of a diode. Current in the nanotube diode is carried by holes transported through the molecule's one-dimensional subbands. At 77 Kelvin we observe a step-wise increase in the current through the diode as a function of gate voltage, showing that we can control the number of occupied one-dimensional subbands through electrostatic doping.Comment: to appear in Physical Review Letters. 4 pages & 3 figure

Protection of CpG islands from DNA methylation is DNA-encoded and evolutionarily conserved.

DNA methylation is a repressive epigenetic modification that covers vertebrate genomes. Regions known as CpG islands (CGIs), which are refractory to DNA methylation, are often associated with gene promoters and play central roles in gene regulation. Yet how CGIs in their normal genomic context evade the DNA methylation machinery and whether these mechanisms are evolutionarily conserved remains enigmatic. To address these fundamental questions we exploited a transchromosomic animal model and genomic approaches to understand how the hypomethylated state is formed in vivo and to discover whether mechanisms governing CGI formation are evolutionarily conserved. Strikingly, insertion of a human chromosome into mouse revealed that promoter-associated CGIs are refractory to DNA methylation regardless of host species, demonstrating that DNA sequence plays a central role in specifying the hypomethylated state through evolutionarily conserved mechanisms. In contrast, elements distal to gene promoters exhibited more variable methylation between host species, uncovering a widespread dependence on nucleotide frequency and occupancy of DNA-binding transcription factors in shaping the DNA methylation landscape away from gene promoters. This was exemplified by young CpG rich lineage-restricted repeat sequences that evaded DNA methylation in the absence of co-evolved mechanisms targeting methylation to these sequences, and species specific DNA binding events that protected against DNA methylation in CpG poor regions. Finally, transplantation of mouse chromosomal fragments into the evolutionarily distant zebrafish uncovered the existence of a mechanistically conserved and DNA-encoded logic which shapes CGI formation across vertebrate species

Bandgap Change of Carbon Nanotubes: Effect of Small Tensile and Torsional Strain

We use a simple picture based on the $\pi$ electron approximation to study the bandgap variation of carbon nanotubes with uniaxial and torsional strain. We find (i) that the magnitude of slope of bandgap versus strain has an almost universal behaviour that depends on the chiral angle, (ii) that the sign of slope depends on the value of $(n-m) \bmod 3$ and (iii) a novel change in sign of the slope of bandgap versus uniaxial strain arising from a change in the value of the quantum number corresponding to the minimum bandgap. Four orbital calculations are also presented to show that the $\pi$ orbital results are valid.Comment: Revised. Method explained in detai

Multiple Functionality in Nanotube Transistors

Calculations of quantum transport in a carbon nanotube transistor show that such a device offers unique functionality. It can operate as a ballistic field-effect transistor, with excellent characteristics even when scaled to 10 nm dimensions. At larger gate voltages, channel inversion leads to resonant tunneling through an electrostatically defined nanoscale quantum dot. Thus the transistor becomes a gated resonant tunelling device, with negative differential resistance at a tunable threshold. For the dimensions considered here, the device operates in the Coulomb blockade regime, even at room temperature.Comment: To appear in Phys. Rev. Let