The Impact of Radiation on Semiconducting Characteristics of Monocrystalline Silicon and Germanium

The paper examines the effects of radiation on the electrical characteristics of monocrystalline silicon and germanium. Samples of monocrystalline silicon and germanium are irradiated under controlled laboratory conditions in the field of neutron, X- and gamma-radiation. Change of the samples specific resistance was measured dependent on the radiation dose with the type of radiation as a parameter. Next, the dependence of the samples resistance on temperature was recorded (in the impurities region and in intrinsic region) with the previously absorbed dose as a parameter. The results were statistically analyzed and explained on the basis of radiation effects in solids. The results are compared with those obtained by using Monte Carlo method. A good agreement was confirmed by the mentioned experimental investigation

Comparison of the Empirical Variances and Mean Values of Normally Distributed Populations of Nuclear Counts

This paper discusses the possibility of applying the F-test and double t-test in problems related to the identification of number of radioactive isotopes in a contaminated area by using only counters for radiation detection. The descriptions of the F-test and the double t-test are given along with the corresponding tabular values that enable their implementation. Finally, the experiment is presented via two radioactive samples. The results of the experiment were treated in the manner proposed in the paper and satisfactory results were obtained

The effects induced by the gamma-ray responsible for the threshold voltage shift of commercial p-channel power VDMOSFET

The variations in the threshold voltage shift in p-channel power VDMOSFET during the gamma ray irradiation was investigated in the dose range from 10 to 100 Gy. The investigations were performed without the gate bias and with 5 V gate bias. The devices with 5 V gate bias exhibit a linear dependence between the threshold voltage shift and the radiation dose. The densities of radiation-induced fixed and switching traps were determined from the sub-threshold I-V characteristics using the midgap technique. It was shown that the creation of fixed traps is dominant during the irradiation. The possible mechanisms responsible for the fixed and switching traps creation are also analyzed in this paper

Effects of Ion Beams on Flash Memory Cells

This paper deals with the flash memory reliability in terms of the ionizing radiation effects. In fact, the reliability of flash memory depends on physico-chemical restrictions of electrostatic nature due to the effects of ionizing radiation. The presented results are actual as a high degree of integrated components miniaturization affects the memory sensitivity, while the role of memories in the solar cells management system for space flights is increasing, so that the effects of ionizing radiation may cause changes in the stored data or the physical destruction of the flash memory components

Humoral immunity of pregnant bitches, vaccinated with inactivated vaccine against parvoviral infections in dogs

Parvoviral infections are a big medical and economic problem, in particular in large dog-breeding facilities. Having in mind the manner in which this infection is spread (fecal-oral pathways), and the strong resistence of parvoviruses to the outer environment, general and immunoprophylaxis have a significant role in the control of this dangerous disease. This work examines the humoral immunological response of pregnant bitches, vaccinated with an inactivated vaccine against parvoviral infection in dogs. An experiment was performed on 10 pregnant bitches which were vaccinated on the 42nd day of gravidity with an inactivated vaccine, and an IHA test proved the lowest titer of antibodies was 1:1280, and the highest 1:20480. The titer of pregnant bitches before vaccination ranged from 1:80 to 1:320. These investigations indicate that puppies of vaccinated bitches receive the corresponding level of immunoglobulin through colostrum, and are protected from parvoviral infection in the first 6-7 weeks of life

Numerical Simulations of Pulsed Power Electronic Components Radiation Hardness

An increasing degree of both semiconductor components miniaturization and electromagnetic contamination of the environment brings into question the reliability of modern electronic devices. This is particularly emphasized in the functioning conditions of electronic devices related to: nuclear power facilities, medical devices based on nuclear particle and x-ray radiation and the impulse power device. At the same time, non-resistance of semiconductor components to the effects of particle and electromagnetic radiation represents the basic limitation of the expected development of nanoelectronic components. Since the most commonly used material for manufacturing semiconductor components is monocrystalline silicon, it is of great significance to be aware of the influence of nuclear particle and electromagnetic radiation on its relevant. Based on the well-known effects of nuclear (particle) interactions and electromagnetic radiation, the biggest influence on the electrical characteristics of monocrystalline silicon should be expected from neutron (n), x-ray (x) and gamma (gamma) radiation. The evaluation of such influence is often carried out (for economic and security reasons) by simulating the effect of radiation interaction with the material, applying the Monte Carlo method (numerical experiments). The aim of this paper is to evaluate the application of the Monte Carlo method for this class of problems. For this purpose, the effect of n, x and gamma radiation on the electrical characteristics of monocrystalline silicon will be determined, under the well-controlled laboratory conditions. The parameters of the experiment are energy and radiation dose. Electric characteristics of monocrystalline silicon are determined using the four-point method and the thermal method. The corresponding numerical experiments will be conducted simultaneously with these laboratory experiments. On the basis of already obtained statistical samples (laboratory and numerical experiments), the testing of both correlation and regression between them will be carried out. The results will provide an answer to the question concerning the feasibility of the Monte Carlo method for the described class of problems2015 IEEE Pulsed Power Conference (PPC), Proceedings, May 31-Jun 04, 2015, Austin, T

Numerical Simulations of Pulsed Power Electronic Components Radiation Hardness

An increasing degree of both semiconductor components miniaturization and electromagnetic contamination of the environment brings into question the reliability of modern electronic devices. This is particularly emphasized in the functioning conditions of electronic devices related to: nuclear power facilities, medical devices based on nuclear particle and x-ray radiation and the impulse power device. At the same time, non-resistance of semiconductor components to the effects of particle and electromagnetic radiation represents the basic limitation of the expected development of nanoelectronic components. Since the most commonly used material for manufacturing semiconductor components is monocrystalline silicon, it is of great significance to be aware of the influence of nuclear particle and electromagnetic radiation on its relevant. Based on the well-known effects of nuclear (particle) interactions and electromagnetic radiation, the biggest influence on the electrical characteristics of monocrystalline silicon should be expected from neutron (n), x-ray (x) and gamma (gamma) radiation. The evaluation of such influence is often carried out (for economic and security reasons) by simulating the effect of radiation interaction with the material, applying the Monte Carlo method (numerical experiments). The aim of this paper is to evaluate the application of the Monte Carlo method for this class of problems. For this purpose, the effect of n, x and gamma radiation on the electrical characteristics of monocrystalline silicon will be determined, under the well-controlled laboratory conditions. The parameters of the experiment are energy and radiation dose. Electric characteristics of monocrystalline silicon are determined using the four-point method and the thermal method. The corresponding numerical experiments will be conducted simultaneously with these laboratory experiments. On the basis of already obtained statistical samples (laboratory and numerical experiments), the testing of both correlation and regression between them will be carried out. The results will provide an answer to the question concerning the feasibility of the Monte Carlo method for the described class of problems2015 IEEE Pulsed Power Conference (PPC), Proceedings, May 31-Jun 04, 2015, Austin, T

Comparison of the empirical variances and mean values of normally distributed populations of nuclear counts

This paper discusses the possibility of applying the F-test and double t-test in problems related to the identification of number of radioactive isotopes in a contaminated area by using only counters for radiation detection. The descriptions of the F-test and the double t-test are given along with the corresponding tabular values that enable their implementation. Finally, the experiment is presented via two radioactive samples. The results of the experiment were treated in the manner proposed in the paper and satisfactory results were obtained. [Projekat Ministarstva nauke Republike Srbije, br. 171007

The effects induced by the gamma-ray responsible for the threshold voltage shift of commercial p-channel power VDMOSFET

The variations in the threshold voltage shift in p-channel power VDMOSFET during the gamma ray irradiation was investigated in the dose range from 10 to 100 Gy. The investigations were performed without the gate bias and with 5 V gate bias. The devices with 5 V gate bias exhibit a linear dependence between the threshold voltage shift and the radiation dose. The densities of radiation-induced fixed and switching traps were determined from the sub-threshold I-V characteristics using the midgap technique. It was shown that the creation of fixed traps is dominant during the irradiation. The possible mechanisms responsible for the fixed and switching traps creation are also analyzed in this paper. [Project of the Serbian Ministry of Education, Science and Technological Development, Grant no. 171007