Thermodynamic aspects of describing the contribution of spontaneous magnetism of electrons to the Hall resistance

On the base of the analysis of quantum-statistical description of the magnetization of electron system containing the spontaneous spin polarization contribution there were found the magnetization and conduction current densities in equilibrium state. It has been shown that equilibrium surface conduction current ensures realization of demagnetization effects but in local equilibrium state determines local equilibrium part of the Hall conductivity. As a result one is given the justification of influence of the spontaneous magnetization on galvanomagnetic effects, which is not related to spin-orbital interaction. © 2018 The Authors, published by EDP Sciences.The work was performed as a part of the state task FASO Russia (subject "Electron», № 01201463326) with partial support by the RFBR (project №15-02-08909 ), Fundamental Research Program of UB RAS 2015-2017 (project № 15-17-2-32), by Act 211 Government of the Russian Federation, agreement № 02.A03.21.0006, by the Ministry of Education and Science of the Russian Federation, projects 5719

Vortex-antivortex wavefunction of a degenerate quantum gas

A mechanism of a pinning of the quantized matter wave vortices by optical vortices in a specially arranged optical dipole traps is discussed. The vortex-antivortex optical arrays of rectangular symmetry are shown to transfer angular orbital momentum and form the "antiferromagnet"-like matter waves. The separable Hamiltonian for matter waves in pancake trapping geometry is proposed and 3D-wavefunction is factorized in a product of wavefunctions of the 1D harmonic oscillator and 2D vortex-antivortex quantum state. The 2D wavefunction's phase gradient field associated via Madelung transform with the field of classical velocities forms labyrinth-like structure. The macroscopic quantum state composed of periodically spaced counter-rotating BEC superfluid vortices has zero angular momentum and nonzero rotational energy.Comment: 11 pages, 5 figure

Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese

The magnetic moment and magnetization in GaAs/Ga$_{0.84}$In$_{0.16}$As/GaAs heterostructures with Mn deluted in GaAs cover layers and with atomically controlled Mn $\delta$-layer thicknesses near GaInAs-quantum well ($\sim$3 nm) in temperature range T=(1.8-300)K in magnetic field up to 50 kOe have been investigated. The mass magnetization all of the samples of GaAs/Ga$_{0.84}$In$_{0.16}$As/GaAs with Mn increases with the increasing of the magnetic field that pointed out on the presence of low-dimensional ferromagnetism in the manganese depletion layer of GaAs based structures. It has been estimated the manganese content threshold at which the ferromagnetic ordering was found.Comment: 8 pages, 3 figure

Experimental observation of spontaneous spin polarization of electrons in hybridized states of transition element impurities in semiconductors

Experimental evidence of the possible existence of spontaneous spin polarization of the electron system in hybridized states formed by transition element impurity atoms in the conduction band of semiconducting crystals is examined. The details of a quantitative interpretation of experiments on the temperature dependence of the specific heat and elastic moduli of mercury selenide crystals with iron impurities confirm the feasibility of establishing the presence of electron spin polarization in this type of experiment, as well as the possible existence of polarization in the crystals studied here. Theoretical arguments support the observation of a thermodynamic anomalous Hall effect owing to spontaneously polarized donor electrons from low-concentration impurities. © 2013 AIP Publishing LLC