13,549 research outputs found
Effect of n+-GaAs thickness and doping density on spin injection of GaMnAs/n+-GaAs Esaki tunnel junction
We investigated the influence of n+-GaAs thickness and doping density of
GaMnAs/n+-GaAs Esaki tunnel junction on the efficiency of the electrical
electron spin injection. We prepared seven samples of GaMnAs/n+-GaAs tunnel
junctions with different n+-GaAs thickness and doping density grown on
identical p-AlGaAs/p-GaAs/n-AlGaAs light emitting diode (LED) structures.
Electroluminescence (EL) polarization of the surface emission was measured
under the Faraday configuration with external magnetic field. All samples have
the bias dependence of the EL polarization, and higher EL polarization is
obtained in samples in which n+-GaAs is completely depleted at zero bias. The
EL polarization is found to be sensitive to the bias condition for both the
(Ga,Mn)As/n+-GaAs tunnel junction and the LED structure.Comment: 4pages, 4figures, 1table, To appear in Physica
Clustering induced suppression of ferromagnetism in diluted magnets
Ferromagnetism in diluted magnets in the compensated regime p << x is shown
to be suppressed by the formation of impurity spin clusters. The majority bulk
spin couplings are shown to be considerably weakened by the preferential
accumulation of holes in spin clusters, resulting in low-energy magnon
softening and enhanced low-temperature decay of magnetic order. A locally
self-consistent magnon renormalization analysis of spin dynamics shows that
although strong intra-cluster correlations tend to prolong global order, T_c is
still reduced compared to the ordered case.Comment: published version, 5 pages, 4 figure
Integral Transforms for Conformal Field Theories with a Boundary
A new method is developed for solving the conformally invariant integrals
that arise in conformal field theories with a boundary. The presence of a
boundary makes previous techniques for theories without a boundary less
suitable. The method makes essential use of an invertible integral transform,
related to the radon transform, involving integration over planes parallel to
the boundary. For successful application of this method several nontrivial
hypergeometric function relations are also derived.Comment: 20 pagess, LateX fil
Domain wall dynamics in a single CrO grain
Recently we have reported on the magnetization dynamics of a single CrO
grain studied by micro Hall magnetometry (P. Das \textit{et al.}, Appl. Phys.
Lett. \textbf{97} 042507, 2010). For the external magnetic field applied along
the grain's easy magnetization direction, the magnetization reversal takes
place through a series of Barkhausen jumps. Supported by micromagnetic
simulations, the ground state of the grain was found to correspond to a flux
closure configuration with a single cross-tie domain wall. Here, we report an
analysis of the Barkhausen jumps, which were observed in the hysteresis loops
for the external field applied along both the easy and hard magnetization
directions. We find that the magnetization reversal takes place through only a
few configuration paths in the free-energy landscape, pointing to a high purity
of the sample. The distinctly different statistics of the Barkhausen jumps for
the two field directions is discussed.Comment: JEMS Conference, to appear in J. Phys. Conf. Se
Carrier States and Ferromagnetism in Diluted Magnetic Semiconductors
Applying the dynamical coherent potential approximation to a simple model, we
have systematically studied the carrier states in Mn-type diluted
magnetic semiconductors (DMS's). The model calculation was performed for three
typical cases of DMS's: The cases with strong and moderate exchange
interactions in the absence of nonmagnetic potentials, and the case with strong
attractive nonmagnetic potentials in addition to moderate exchange interaction.
When the exchange interaction is sufficiently strong, magnetic impurity bands
split from the host band. Carriers in the magnetic impurity band mainly stay at
magnetic sites, and coupling between the carrier spin and the localized spin is
very strong. The hopping of the carriers among the magnetic sites causes
ferromagnetism through a {\it double-exchange (DE)-like} mechanism. We have
investigated the condition for the DE-like mechanism to operate in DMS's. The
result reveals that the nonmagnetic attractive potential at the magnetic site
assists the formation of the magnetic impurity band and makes the DE-like
mechanism operative by substantially enhancing the effect of the exchange
interaction. Using conventional parameters we have studied the carrier states
in GaMnAs. The result shows that the ferromagnetism is caused
through the DE-like mechanism by the carriers in the bandtail originating from
the impurity states.Comment: 20 pages, 14 figure
Eigenvalue distribution of the Dirac operator at finite temperature with (2+1)-flavor dynamical quarks using the HISQ action
We report on the behavior of the eigenvalue distribution of the Dirac
operator in (2+1)-flavor QCD at finite temperature, using the HISQ action. We
calculate the eigenvalue density at several values of the temperature close to
the pseudocritical temperature. For this study we use gauge field
configurations generated on lattices of size with two light
quark masses corresponding to pion masses of about 160 and 115 MeV. We find
that the eigenvalue density below receives large contributions from
near-zero modes which become smaller as the temperature increases or the light
quark mass decreases. Moreover we find no clear evidence for a gap in the
eigenvalue density up to 1.1. We also analyze the eigenvalue density near
where it appears to show a power-law behavior consistent with what is
expected in the critical region near the second order chiral symmetry restoring
phase transition in the massless limit.Comment: 7 pages, 7 figures, talk presented at the XXIX International
Symposium on Lattice Field Theory, July 10-16 2011, Squaw Valley, Lake Tahoe,
California, US
Anisotropic Magnetoresistance in GaMnAs
We have measured the magnetoresistance in a series of GaMnAs
samples with 0.033 0.053 for three mutually orthogonal orientations
of the applied magnetic field. The spontaneous resistivity anisotropy (SRA) in
these materials is negative (i.e. the sample resistance is higher when its
magnetization is perpendicular to the measuring current than when the two are
parallel) and has a magnitude on the order of 5% at temperatures near 10K and
below. This stands in contrast to the results for most conventional magnetic
materials where the SRA is considerably smaller in magnitude for those few
cases in which a negative sign is observed. The magnitude of the SRA drops from
its maximum at low temperatures to zero at T in a manner that is consistent
with mean field theory. These results should provide a significant test for
emerging theories of transport in this new class of materials.Comment: 4 pages with 4 figures. Submitted to Physical Review
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