Coulomb Drag Between Parallel Ballistic Quantum Wires

The Coulomb drag between parallel, {\it ballistic} quantum wires is studied theoretically in the presence of a perpendicular magnetic field B. The transresistance R_D shows peaks as a function of the Fermi level and splitting energy between the 1D subbands of the wires. The sharpest peaks appear when the Fermi level crosses the subband extrema so that the Fermi momenta are small. Two other kinds of peaks appear when either {\it intra}- or {\it inter}-subband transitions of electrons have maximum probability; the {\it intra}-subband transitions correspond to a small splitting energy. R_D depends on the field B in a nonmonotonic fashion: it decreases with B, as a result of the suppression of backscattering, and increases sharply when the Fermi level approaches the subband bottoms and the suppression is outbalanced by the increase of the Coulomb matrix elements and of the density of states.Comment: Text 14 pages in Latex/Revtex format, 4 Postscript figures. Phys. Rev. B,in pres

Inter-layer Hall effect in double quantum wells subject to in-plane magnetic fields

We report on a theoretical study of the transport properties of two coupled two-dimensional electron systems subject to in-plane magnetic fields. The charge redistribution in double wells induced by the Lorenz force in crossed electric and magnetic fields has been studied. We have found that the redistribution of the charge and the related inter-layer Hall effect originate in the chirality of diamagnetic currents and give a substantial contribution to the conductivity.Comment: 7 RevTex pages, 4 figures, appendix added and misprint in Eq. (11) correcte

Phonon drag in ballistic quantum wires

The acoustic phonon-mediated drag-contribution to the drag current created in the ballistic transport regime in a one-dimensional nanowire by phonons generated by a current-carrying ballistic channel in a nearby nanowire is calculated. The threshold of the phonon-mediated drag current with respect to bias or gate voltage is predicted.Comment: 5 pages, 2 figure

Effect of intersubband scattering on weak localization in 2D systems

The theory of weak localization is generalized for multilevel 2D systems taking into account intersubband scattering. It is shown that weak intersubband scattering which is negligible in a classical transport, affects strongly the weak-localization correction to conductivity. The anomalous magnetoresistance is calculated in the whole range of classically low magnetic fields. This correction to conductivity is shown to depend strongly on the ratios of occupied level concentrations. It is demonstrated that at relatively low population of the excited subband, it is necessary to use the present theory because the high-field limit asimptotics is shown to be achieved only in classical magnetic fields.Comment: 18 pages, 4 figures. Accepted to Phys. Rev. B 6

Magnetoresistance and electronic structure of asymmetric GaAs/AlGaAs double quantum wells in the in-plane/tilted magnetic field

Bilayer two-dimensional electron systems formed by a thin barrier in the GaAs buffer of a standard heterostructure were investigated by magnetotransport measurements. In magnetic fields oriented parallel to the electron layers, the magnetoresistance exhibits an oscillation associated with the depopulation of the higher occupied subband and the field-induced transition into a decoupled bilayer. Shubnikov-de Haas oscillations in slightly tilted magnetic fields allow to reconstruct the evolution of the electron concentration in the individual subbands as a function of the in-plane magnetic field. The characteristics of the system derived experimentally are in quantitative agreement with numerical self-consistent-field calculations of the electronic structure.Comment: 6 pages, 5 figure

Conductance oscillations in strongly correlated fractional quantum Hall line junctions

We present a detailed theory of transport through line junctions formed by counterpropagating single-branch fractional-quantum-Hall edge channels having different filling factors. Intriguing transport properties are exhibited when strong Coulomb interactions between electrons from the two edges are present. Such strongly correlated line junctions can be classified according to the value of an effective line-junction filling factor n that is the inverse of an even integer. Interactions turn out to affect transport most importantly for n=1/2 and n=1/4. A particularly interesting case is n=1/4 corresponding to, e.g., a junction of edge channels having filling factor 1 and 1/5, respectively. We predict its differential tunneling conductance to oscillate as a function of voltage. This behavior directly reflects the existence of novel Majorana-fermion quasiparticle excitations in this type of line junction. Experimental accessibility of such systems in current cleaved-edge overgrown samples enables direct testing of our theoretical predictions.Comment: 2 figures, 10 pages, RevTex4, v2: added second figure for clarit

Interface electronic states and boundary conditions for envelope functions

The envelope-function method with generalized boundary conditions is applied to the description of localized and resonant interface states. A complete set of phenomenological conditions which restrict the form of connection rules for envelope functions is derived using the Hermiticity and symmetry requirements. Empirical coefficients in the connection rules play role of material parameters which characterize an internal structure of every particular heterointerface. As an illustration we present the derivation of the most general connection rules for the one-band effective mass and 4-band Kane models. The conditions for the existence of Tamm-like localized interface states are established. It is shown that a nontrivial form of the connection rules can also result in the formation of resonant states. The most transparent manifestation of such states is the resonant tunneling through a single-barrier heterostructure.Comment: RevTeX4, 11 pages, 5 eps figures, submitted to Phys.Rev.

Magnetooscillations of the tunneling current between two-dimensional electron systems

This work has been supported in part by the Joint Found of the Government of Ukraine and International Science Foundation, Grant n. U65200Consiglio Nazionale delle Ricerche (CNR). Biblioteca Centrale / CNR - Consiglio Nazionale delle RichercheSIGLEITItal