Characterization of GZO thin films fabricated by RF magnetron sputtering method and electrical properties of In/GZO/Si/Al diode

WOS: 000492443000014The main focus of this work is the structural and optical characterization of Ga-doped ZnO (GZO) thin film and determination of the device behavior of In/GZO/Si/Al diode. GZO thin films were deposited by RF magnetron sputtering technique from single target. The structural and morphological properties of GZO film were investigated by X-ray diffraction (XRD), Raman scattering, scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy analysis (EDS) measurements. Optical properties of the film were determined with transmission measurement. Device characterization of In/GZO/Si/Al diode were done with the analysis of temperature dependent current voltage (I-V) measurement. The current conduction mechanism was investigated with the Thermionic Emission (TE) method. The deviation from the pure TE method was observed and this deviation was analyzed under the assumption of Gaussian Distribution (GD) of barrier height (TE emission with GD). The mean standard deviation and zero bias barrier height were calculated as 0.0268 (about %3) and 1.239 eV, respectively. Richardson constant was found to be as 115.42 A/cm(2) K-2 using the modified Richardson plot. In addition, series resistance R-s was obtained using Cheung's function. Finally, the interface state densities D-it were determined by using the forward bias I-V results

Temperature dependence of electrical properties in In/Cu2ZnSnTe4/Si/Ag diodes

WOS: 000458625200001Cu2ZnSnTe4 (CZTTe) thin films with In metal contact were deposited by thermal evaporation on monocrystalline n-type Si wafers with Ag ohmic contact to investigate the device characteristics of an In/CZTTe/Si/Ag diode. The variation in electrical characteristics of the diode was analysed by carrying out current-voltage (I-V) measurements in the temperature range of 220-360 K. The forward bias I-V behaviour was modelled according to the thermionic emission (TE) theory to obtain main diode parameters. In addition, the experimental data were detailed by taking into account the presence of an interfacial layer and possible dominant current transport mechanisms were studied under analysis of ideality factor, n. Strong effects of temperature were observed on zero-bias barrier height (Phi(B0)) and n values due to barrier height inhomogeneity at the interface. The anomaly observed in the analysis of TE was modelled by Gaussian distribution (GD) of barrier heights with 0.844 eV mean barrier height and 0.132 V standard deviation. According to the Tung's theoretical approach, a linear correlation between Phi(B0) and n cannot be satisfied, and thus the modified Richardson plot was used to determine Richardson constant (A*). As a result, A* was calculated approximately as 120.6 A cm(-2) K-2 very close to the theoretical value for n-Si. In addition, the effects of series resistance (R-s) by estimating from Cheng's function and density of surface states (N-ss) by taking the bias dependence of effective barrier height, were discussed

Electrochemical removal of arsenic and remediation of drinking water quality

2-s2.0-85102706664Arsenic is one of the most abundant elements on the earth and possesses metallic as well as nonmetallic properties. Besides arsenic is very toxic and carcinogenic, it is found in nature both naturally and anthropogenically. Inorganic arsenic species existing in water are arsenite (As3+) and arsenate (As5+). Arsenic toxicity is a global problem because arsenic contamination is naturally coming from water resources. The maximum admissible concentration of arsenic must not exceed 10 µg L–1, so the determination of the total arsenic amount regardless of its species is very important. In this work, the presence of arsenic was electrochemically determined using cyclic, square wave and differential pulse voltammetry, and a spectroscopic determination method including induc-tively coupled plasma-mass spectrometry (ICP-MS) was applied. A combination of ICP-MS as a sen-sitive, multi-element capable and reliable method with electrochemistry as a simple, cost-efficient and powerful method was performed to determine and remove arsenic for the first time. Newly modified nano-dimensional surfaces were developed to obtain specific arsenic behavior and effective electrodeposition of arsenic in the removal process. With the water supply research, regional differences in drinking waters were discovered, and different kinds of drinking water samples were put into a common form in terms of drinkable, arsenic-free, high-grade standards. © 2021 Desalination Publications. All rights reserved.FKB-2019-20505This work was supported and granted by the Ege University Scientific Research Project of Turkey (FKB-2019-20505)

Electrochemical removal and simultaneous sensing of mercury with inductively coupled plasma-mass spectrometry from drinking water

Mercury is a naturally occurring metallic chemical element in environment. Environmental levels of mercury vary between water resources. The concentration level of mercury in drinking water is 30 ng/L, which is accepted by US Environmental Protection Agency. Therefore, the simultaneous sensing and treatment of water by recently improved technologies are very important. In this work, inductively coupled plasma-mass spectrometry (ICP-MS) and electrochemical techniques were applied together to determine and remove mercury for the first time. ICP-MS was chosen as a sensitive, multielement capable, powerful, and reliable spectrometry type between other heavy metals determination methods, and it is also applied to research drinking water resources. New nanodimensional surfaces were constructed to respond to specific mercury behavior, and simple, cost-efficient, and practical electrochemical techniques were used to remove mercury existing in drinking water samples. After electrodeposition of mercury over the proposed electrode, treated, clean, and mercury-free water samples were obtained. (c) 2021 Elsevier Ltd. All rights reserved.Ege University Scientific Research Project of Turkey [FKB-2019-20505]This work was supported and granted by the Ege University Scientific Research Project of Turkey (FKB-2019-20505)

ADE in risky choice

Experimental Dat

ADE in risky choice

Experimental Dat

Electrochemical determination of ?-lactoglobulin in whey proteins

2-s2.0-85073938067Determination of ?-lactoglobulin in milk products is very important because ?-lactoglobulin is the main ingredient in whey-based protein powders. However, ?-lactoglobulin is a dangerous food allergen. On such an occasion, the determination of ?-lactoglobulin is coming into prominence and electrochemistry is a good alternative for this purpose because of its simple, economic and rapid response. In this work, a graphene oxide modified pencil graphite electrode is developed to determine ?-lactoglobulin based on the current signal of known concentration of hydrogen peroxide. Cyclic voltammetry technique is performed to obtain the electrochemical behavior of ?-lactoglobulin. Linear range, limit of detection and limit of quantification were calculated according to the calibration curve of various amounts of ?-lactoglobulin. Ultraviolet–visible spectroscopy technique is also used to investigate the absorption behavior of ?-lactoglobulin in various biological macromolecules including whey proteins. The proposed graphene oxide modified pencil graphite surface is successfully applied to determine ?-lactoglobulin in real milk sample, so a new methodology based on a newly developed electrochemical technique is described as a promising alternative in diary products. © 2019, Springer Science+Business Media, LLC, part of Springer Nature

Pressure and spin effect on the stability, electronic and mechanic properties of three equiatomic quaternary Heusler (FeVHfZ, Z = Al, Si, and Ge) compounds

In this paper, three equiatomic quaternary Heusler compounds − role= presentation style= box-sizing: border-box; margin: 0px; padding: 0px; display: inline-block; line-height: normal; font-size: 16.2px; word-spacing: normal; overflow-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; position: relative; \u3e− FeVHfZ (Z = Al, Si, and Ge) − role= presentation style= box-sizing: border-box; margin: 0px; padding: 0px; display: inline-block; line-height: normal; font-size: 16.2px; word-spacing: normal; overflow-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; position: relative; \u3e− are investigated for their structural, magnetic, electronic, mechanic, and lattice dynamic properties under pressure effect. These compounds are optimized for under three structural types and three magnetic phases: β role= presentation style= box-sizing: border-box; margin: 0px; padding: 0px; display: inline-block; line-height: normal; font-size: 16.2px; word-spacing: normal; overflow-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; position: relative; \u3eβ is the most stable structure with ferromagnetic phase. The electronic properties reveal that FeVHfAl is a half-metal, and that FeVHfSi and FeVHfGe are spin gapless semiconductors. In addition to electronic band structure, possible hybridization and partial density of states are presented. Furthermore, the mechanical properties are studied, and the three-dimensional direction-dependent mechanical properties are visualized under varying pressure effects. Our results reveal the half-metal and spin gapless semiconductor nature of the ferromagnetic FeVHfZ compounds, making them promising materials for spintronics applications

Treatment of Class II, division 1, with a maxillary traction appliance [Traitement des Classes II, division 1, par une gouttière de traction maxillaire.]

PubMed ID: 2395760[No abstract available

The investigation of electronic, anisotropic elastic and lattice dynamical properties of MAB phase nanolaminated ternary borides: M2AlB2 (M=Mn, Fe and Co) under spin effects

In the present study, the structural, electronic, magnetic, anisotropic elastic and lattice dynamic properties of the ternary metal borides M2AlB2 (M=Mn, Fe and Co) known as MAB phases have been investigated by density functional theory. The obtained results from the structural optimizations show that all these compounds have negative formation enthalpy implying the thermodynamic stability and synthesizability. The spin effects on the M2AlB2 phases have been studied with the plotted energy-volume curves for different magnetic phases (antiferromagnetic (AFM), ferromagnetic (FM), and paramagnetic (PM)) of these compounds. The stable magnetic phase for the Mn2AlB2 compound is found to be AFM while the magnetic nature of Fe2AlB2 and Co2AlB2 compounds are FM. The calculated electronic band structures with the total and orbital projected partial density of electronic states imply that these ternary metal borides have metallic behavior. Also, the mentioned compounds have mechanical and dynamic stability due to the calculated elastic constants and the observed phonon dispersion curves. Some thermodynamic properties have been investigated by means of phonon dispersion curves. Furthermore, the anisotropic elastic properties have been visualized in three dimensions (3D) for Young's modulus, linear compressibility, shear modulus, Poisson's ratio, and sound wave velocities. © 2020 Elsevier B.V